BEGIN:VCALENDAR VERSION:2.0 PRODID:-//CERN//INDICO//EN BEGIN:VEVENT SUMMARY:Reverse current of heavily irradiated silicon detectors operated i n the avalanche mode DTSTART;VALUE=DATE-TIME:20101117T150000Z DTEND;VALUE=DATE-TIME:20101117T152000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-25@cern.ch DESCRIPTION:Speakers: EREMIN\, Vladimir ()\nThe high concentration of radi ation induced defects in the detector bulk is the key factor of detector p arameters stabilization at very high biase voltage. In this presentation t he effect of deep levels on the detector reverse current is considered and the calculated I-V characteristics are compared with the experimental one s.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=25&sessionId= 1&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=25&sessionId=1& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Test beam analysis on Timepix 3D pixel detector DTSTART;VALUE=DATE-TIME:20101118T162000Z DTEND;VALUE=DATE-TIME:20101118T164000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-26@cern.ch DESCRIPTION:Speakers: PARKS\, Chris (Glasgow University)\nAn n-type double -sided 3D detector fabricated at CNM bump bonded to a Timepix chip has bee n tested in a pion and a micro-focused x-ray test beams. The resulst from both test beams will be shown. The x-ray test beam shows relative detectio n maps of the 3D pixel device. \nThe pion test beam results show the absol ute detection efficiency\, cluster size and resolution for detectors with particles at a range of incident angles from normal to 18 degrees.\n\nhttp ://indico.cern.ch/contributionDisplay.py?contribId=26&sessionId=4&confId=1 11191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=26&sessionId=4& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:The Timepix Telescope DTSTART;VALUE=DATE-TIME:20101118T134000Z DTEND;VALUE=DATE-TIME:20101118T140000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-27@cern.ch DESCRIPTION:Speakers: PLACKETT\, Richard (Glasgow University)\nA report on the development of a high resolution particle tracking telescope based on the Timepix pixel detector. Using the different modes of operation avail able in Timepix a Telescope system has been developed that can provide a s patial resolution of under 2 microns and a timing resolution to the order of a nanosecond. This track time tagging ability has been used to incorpor ate an LHCb/Beetle 40MHz readout to allow an LHC compatible device under t est to be operated in an \nasynchronous beam. Initial results from testb eams with Timepix and \nother test targets from 2009 and 2010 will be repo rted.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=27&session Id=3&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=27&sessionId=3& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Discussion on Defect and Material Characterization and Pad Detecto r Characterization DTSTART;VALUE=DATE-TIME:20101117T152000Z DTEND;VALUE=DATE-TIME:20101117T160000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-20@cern.ch DESCRIPTION:Speakers: Prof. BRUZZI\, Mara (INFN and University of Florence )\, FRETWURST\, Eckhart (II. Institut fuer Experimentalphysik)\nhttp://ind ico.cern.ch/contributionDisplay.py?contribId=20&sessionId=1&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=20&sessionId=1& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Discussion on Full Detector Systems DTSTART;VALUE=DATE-TIME:20101118T140000Z DTEND;VALUE=DATE-TIME:20101118T143000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-21@cern.ch DESCRIPTION:Speakers: KRAMBERGER\, Gregor (Jozef Stefan Institute)\, CASSE \, Gianluigi (Department of Physics)\nhttp://indico.cern.ch/contributionDi splay.py?contribId=21&sessionId=3&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=21&sessionId=3& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Discussion on 3D sensors DTSTART;VALUE=DATE-TIME:20101118T164000Z DTEND;VALUE=DATE-TIME:20101118T171000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-22@cern.ch DESCRIPTION:Speakers: BATES\, Richard (Department of Physics and Astronomy )\, Dr. PARKES\, Chris (Glasgow)\nhttp://indico.cern.ch/contributionDispla y.py?contribId=22&sessionId=4&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=22&sessionId=4& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Annealing CCE study on HPK FZ p-on-n ministrip detectors. DTSTART;VALUE=DATE-TIME:20101118T084000Z DTEND;VALUE=DATE-TIME:20101118T090000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-23@cern.ch DESCRIPTION:Speakers: Mr. LUCAS\, Christopher (University of Bristol (UK)) \nHPK FZ p-on-n ministrip detectors\, of the type currently used in severa l LHC experiments\, have been irradiated both with protons and neutrons to equivalent fluences of 1e15 n/cm^2. The detectors have then been characte rized with beta CCE measurements based on the ALIBAVA system throughout se veral annealing steps\, to assess the effect on the performances of the de tectors of hypothetical long shutdowns of the cooling systems of the exper iments.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=23&sessi onId=3&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=23&sessionId=3& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Annealing Effects on Depletion Voltage and Capacitance of Float Zo ne and Magnetic Czochralski Silicon Diodes After 800 MeV Proton Exposure DTSTART;VALUE=DATE-TIME:20101117T141000Z DTEND;VALUE=DATE-TIME:20101117T143000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-1@cern.ch DESCRIPTION:Speakers: Dr. TOMS\, Konstantin (University of New Mexico)\nTh e radiation damage effects on p- and n-type Float Zone (FZ) and Magnetic C zochralski (MCz) Silicon diodes were characterized by studying the capacit ance and depletion voltage. The diodes were exposed to 800 MeV protons\nto fluences up to $1.5x10^{15}$ p/cm^2. The diodes were then annealed at 60  °C and measured at various intervals up to 1\,000 minutes. The intent o f this study is to understand the transition from reverse annealing to ben eficial annealing\nwhere charge type inversion occurs to fully characteriz e the annealing behavior of the diodes. We compare the results to data fro m previous studies taken under different irradiation conditions and to the oretical models. \n\nhttp://indico.cern.ch/contributionDisplay.py?contrib Id=1&sessionId=1&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=1&sessionId=1&c onfId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Investigation of Punch-through Protection (PTP) DTSTART;VALUE=DATE-TIME:20101118T105000Z DTEND;VALUE=DATE-TIME:20101118T111000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-0@cern.ch DESCRIPTION:Speakers: Prof. SADROZINSKI\, Hartmut (SCIPP\, UC santa Cruz)\ nWe checked the effectiveness of PTP structures against large deposits of ionization in the detector bulk using an IR laser\, and compared it with t he results of commonly used DC i-V measurements.\n\nhttp://indico.cern.ch/ contributionDisplay.py?contribId=0&sessionId=3&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=0&sessionId=3&c onfId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:3D-FBK pixel sensors: overview of recent results with proton and n eutron irradiated sensors DTSTART;VALUE=DATE-TIME:20101118T154000Z DTEND;VALUE=DATE-TIME:20101118T160000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-3@cern.ch DESCRIPTION:Speakers: Mr. MICELLI\, Andrea (Universita degli Studi di Udin e)\n3D Silicon sensors fabricated at FBK-irst with Double-side Double Type Column approch and columnar electrodes only partially etched through p-ty pe subtrates have been irradiated and tested in laboratory and with 120 G eV pion beam at CERN SPS. We will present an overview of recent results fr om laboratory tests obtained with devices irradiated with protons and neut rons up to 5x1015 neq/cm2.\n\nhttp://indico.cern.ch/contributionDisplay.py ?contribId=3&sessionId=4&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=3&sessionId=4&c onfId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Characterization and Testbeam Analysis of irradiated Silicon n-in- p Pixel Detectors for the ATLAS Upgrade DTSTART;VALUE=DATE-TIME:20101118T130000Z DTEND;VALUE=DATE-TIME:20101118T132000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-2@cern.ch DESCRIPTION:Speakers: GALLRAPP\, Christian (CERN)\nSilicon n-in-p pixel de tectors from the latest CiS production are detectors similar to ones from the latest ATLAS pixel production.\nFirst measurements of irradiated CiS n -in-p single chip assemblies (SCA) connected to the current ATLAS front en d chip FE-I3 were performed during the last weeks. Characterization result s will be presented from devices irradiated with protons and neutrons up t o fluences of 10E15 n_eq\, as well as results from test beam studies at th e CERN H6B area. An outlook on the ongoing irradiation program and the upc oming analysis steps will summarize the talk.\n\nhttp://indico.cern.ch/con tributionDisplay.py?contribId=2&sessionId=3&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=2&sessionId=3&c onfId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:First measurements with planar pixel detectors after SLHC fluences DTSTART;VALUE=DATE-TIME:20101118T132000Z DTEND;VALUE=DATE-TIME:20101118T134000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-5@cern.ch DESCRIPTION:Speakers: MUENSTERMANN\, Daniel (TU Dortmund)\nATLAS SingleChi p-Assemblies based on the FE-I3 readout chip have been irradiated with rea ctor neutrons in Ljubljana to fluences up to 2E16 neq/cm^2. First measurem ents obtained with a Sr-90 source in the lab will be presented. The collec ted charge will also be compared to preliminary testbeam results.\n\nhttp: //indico.cern.ch/contributionDisplay.py?contribId=5&sessionId=3&confId=111 191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=5&sessionId=3&c onfId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Comparative Studies of Irradiated 3D Silicon Strip Detectors on p- type and n-type Substrate DTSTART;VALUE=DATE-TIME:20101118T160000Z DTEND;VALUE=DATE-TIME:20101118T162000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-4@cern.ch DESCRIPTION:Speakers: KOEHLER\, Michael (Freiburg University)\nDouble-side d 3D silicon strip detectors\, manufactured by CNM on p-type and n-type su bstrate\, were measured after irradiation with sLHC strip- and pixel fluen ces. The device irradiations were performed at the proton cyclotron in Kar lsruhe with 25 MeV protons. Results of measurements with a beta source and an infrared laser will be shown. After a radiation fluence of 2E16 n_eq/c m^2\, the highest fluence studied\, the detector on n-type substrate (p+ i n n) yields a signal comparable to that of the detector processed on p-typ e substrate (n+ in p). A relative CCE of more than 50 % can be reached. Th e influence of different temperatures on signal\, noise and charge multipl ication will be discussed.\n\nhttp://indico.cern.ch/contributionDisplay.py ?contribId=4&sessionId=4&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=4&sessionId=4&c onfId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Edge-TCT measurements of heavily irradiated HPK p-type sensors DTSTART;VALUE=DATE-TIME:20101118T092000Z DTEND;VALUE=DATE-TIME:20101118T094000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-7@cern.ch DESCRIPTION:Speakers: KRAMBERGER\, Gregor (Jozef Stefan Institute)\nHPK p- type sensor was irradiated in steps with reactor neutrons up to the fluenc e of 1e16 cm-2. After each step several Edge-TCT measurements were perform ed during initial stage of annealing. Charge collection properties\, drift velocity profiles were investigated as a function of annealing\, fluence and bias voltage.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribI d=7&sessionId=3&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=7&sessionId=3&c onfId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Annealing effects in n+p strip detectors irradiated with high neut ron fluences DTSTART;VALUE=DATE-TIME:20101118T080000Z DTEND;VALUE=DATE-TIME:20101118T082000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-6@cern.ch DESCRIPTION:Speakers: MANDIC\, Igor (University of Ljubljana)\nMiniature p -type strip detectors were irradiated with reactor neutrons to fluences in the range from 2e14 neq/cm2 to 5e15 neq/cm2. Collected charge was measu red with signals caused by fast electrons from Sr90 source and read out by SCT128A chip. Collected charge and leakage current was measured up to hig h bias voltages (1400 V) at which signs of charge multiplication can be ob served. Detectors were submitted to successive annealing steps at 60°C up to total time of 5040 minutes. Increase of collected charge after long an nealing times was measured at high bias voltages. A similar effect was obs erved in the leakage current\, which at high voltages increased with rever se-annealing time.\n\nhttp://indico.cern.ch/contributionDisplay.py?contrib Id=6&sessionId=3&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=6&sessionId=3&c onfId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:AC—coupled pitch adapters for silicon strip detectors DTSTART;VALUE=DATE-TIME:20101118T101000Z DTEND;VALUE=DATE-TIME:20101118T103000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-9@cern.ch DESCRIPTION:Speakers: HAERKOENEN\, Jasu (Helsinki Institute of Physics HIP )\nSilicon strip detector modules that are used in tracker systems of high energy physics experiments consists of readout hybrid board\, the sensor itself and pitch adapter (PA) in between hybrid and sensor. Modern strip d etectors are almost exclusively AC-coupled because of high leakage current due to the harsh radiation environment. The AC-coupling requires resistiv e isolation of implanted strips from the DC-biasing circuit. Strip isolati on is commonly realized by integrated poly-silicon bias resistors\, where the resistance value is typically around 1M Ω. We present a novel approac h for implementing the AC-coupling in the pitch adapter. AC-coupled PA's have been processed on ordinary glass glass wafers. The two layer fan meta llization is aluminum and the intermediate capacitor insulator is aluminu m oxide (Al2O3) deposited by the Atomic Layer Deposition (ALD) method. ALD is self-limiting Chemical Vapor Deposition (CVD) process\, which charact eristically results in pinhole-free thin films. The temperature of ALD Al2 O3 deposition is 300^0C\, thus it is appropriate for standard glass wafers \, which are limited to about 400^0C in process steps. The bias resistors are made on the glass wafer by sputtering tungsten nitride (WNx). The depo sition of WNx takes place at approximately room temperature and the resist ors are patterned by wet etching with hydrogen peroxide. The electrical ch aracterization of AC-coupled PA's indicate very good breakdown performance of the Al2O3 capacitors and homogeneity of WNx resistance values. A DC-co upled n+/p-/p+ strip detector made of p-type Fz-Si and irradiated with p rotons to a fluence of 3×10^14 neq/cm2 was attached to the CMS APV reado ut hybrid with an AC-coupled PA. The strip detectors size is 4cm × 4cm an d it has 768 strips. Our test beam results indicate a signal-to-noise rati o of 27 for this module.\n\nhttp://indico.cern.ch/contributionDisplay.py?c ontribId=9&sessionId=3&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=9&sessionId=3&c onfId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Optical studies of defect centers formed in MCz-Si and FZ-Si by h igh-fluence neutron irradiation DTSTART;VALUE=DATE-TIME:20101117T125000Z DTEND;VALUE=DATE-TIME:20101117T131000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-8@cern.ch DESCRIPTION:Speakers: SURMA\, Barbara (Institute of Electronic Materials T echnology)\nPhotoluminescence (PL) and infrared absorption (IRA) techniqu es have been applied to study defect centers formed in MCz and FZ by high -fluence neutron irradiation. The MCz-Si and FZ-Si samples prepared by the WODEAN group were irradiated with neutron fluences ranging from 1x10^14 t o 3x10^16 cm^-2. The studies were performed in a temperature range of 13 K –100 K using both the as-irradiated and subjected to isochronal anneal ing samples. The annealing temperature ranged from 300 to 780 K and the ti me was 1 h or 0.5 h. The PL measurements were mainly concentrated on the i ntensity changes of the W (I3) and I4 lines\, commonly assumed to be re lated to complexes built of tri- and four- silicon interstitial atoms\, re spectively. Temperature dependence for the W line intensity was measured i n a temperature range of 13–110 K. The quenching process energy for the W line was found to be 0.3 eV\, what is closed to the activation energy fo r vacancy diffusion. Assuming that W-line is a tri-interstitial complex ( I3)\, this could suggest that the annihilation of the W-line at 1.018 eV is due to vacancy - interstitial recombination process. From the Arrheniu s plot for the I4 line\, •the activation energy for increasing the I4 li ne (1.039 eV) intensity was found to be nearly the same as that for decrea sing the W line (1.018 eV) intensity and was equal to (0.75 +/- 0.15) eV only in a very narrow temperature range. This would suggest that the tri-i nterstitials can be the precursors for the formation of I4 centres in this temperature range. The IRA measurements were focused on the study of the absorption coefficient related to the divacancy (V2) in neutral and negati vely charged states. From these measurements\, the concentrations of V2(0 ) and V2(-) for various neutron fluences were determined and the rates of their formation have been found to be 0.3 cm^-1 and 0.13 cm^-1\, respecti vely.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=8&sessionI d=1&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=8&sessionId=1&c onfId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:New results on the annealing behaviour of the E4/E5-defect DTSTART;VALUE=DATE-TIME:20101117T131000Z DTEND;VALUE=DATE-TIME:20101117T133000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-11@cern.ch DESCRIPTION:Speakers: JUNKES\, Alexandra (Universität Hamburg)\nThis work deals with the bistable con\n\nhttp://indico.cern.ch/contributionDisplay. py?contribId=11&sessionId=1&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=11&sessionId=1& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:A novel two-dimensional microstrip sensor with charge division rea dout DTSTART;VALUE=DATE-TIME:20101118T124000Z DTEND;VALUE=DATE-TIME:20101118T130000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-10@cern.ch DESCRIPTION:Speakers: Dr. VILA ALVAREZ\, Ivan (IFCA - Instituto de Fisica de Cantabria-Consejo Sup. de Investig)\nA novel microstrip sensor with pol ysilicon electrodes manufactured at CNM-IMB is introduced. The slightly re sistive electrodes allows the determination of the particle's hit positi on along the microstrip direction using a charge-division-based readout. P reliminary results from laser\, radioactive source and test beam character ization are given.\n\nhttp://indico.cern.ch/contributionDisplay.py?contrib Id=10&sessionId=3&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=10&sessionId=3& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:TCAD simulation of Si crystal with different clusters. DTSTART;VALUE=DATE-TIME:20101117T133000Z DTEND;VALUE=DATE-TIME:20101117T135000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-13@cern.ch DESCRIPTION:Speakers: Prof. VAITKUS\, Juozas (Vilnius University)\nThe TCA D Synopsis program was used for: 1) investigation of electric field distri bution in Si crystal containing different types and concentration of clust ers\; 2) analysis of dynamics of electric field around the cluster during and after excitation by a short light pulse. An aim of presentation is an attraction of proposals to model the behavior of semiconductor in other s ituations.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=13&se ssionId=1&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=13&sessionId=1& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Properties of a new series of Hamamatsu Si diodes DTSTART;VALUE=DATE-TIME:20101117T135000Z DTEND;VALUE=DATE-TIME:20101117T141000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-12@cern.ch DESCRIPTION:Speakers: Prof. VAITKUS\, Juozas (Vilnius University)\nA new s eries of diodes FZ-Si (Hamamatsu) investigated by: 1) a standar technique (I(V) and C(V))\; 2) by microwave photoconductivity decay measurement\; 3) the response on the linear front bias pulse technique (BELIV)\; 4) the ph otoconductivity specra in the extrinsic region. Measurements performed at room a tat low temperature. The results are compared with the similar meas urements in other supplier and in irradiated samples.\n\nhttp://indico.cer n.ch/contributionDisplay.py?contribId=12&sessionId=1&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=12&sessionId=1& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Status of 3D detector productions at CNM DTSTART;VALUE=DATE-TIME:20101118T150000Z DTEND;VALUE=DATE-TIME:20101118T152000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-15@cern.ch DESCRIPTION:Speakers: Dr. PELLEGRINI\, Giulio (Centro Nacional de Microele ctronica CNM-IMB-CSIC)\nI will report on the fabrication of new 3D detecto rs devices for the Atlas 3D collaboration and other CERN experiments.\n\nh ttp://indico.cern.ch/contributionDisplay.py?contribId=15&sessionId=4&confI d=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=15&sessionId=4& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Fabrication of new p-type strip detectors with trench to enhance t he charge multiplication effect in the n-type electrodes. DTSTART;VALUE=DATE-TIME:20101118T103000Z DTEND;VALUE=DATE-TIME:20101118T105000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-14@cern.ch DESCRIPTION:Speakers: Dr. PELLEGRINI\, Giulio (Centro Nacional de Microele ctronica CNM-IMB-CSIC)\nThe project aims to fabricate and fully characteri ze p-type strip detectors with trench electrodes to enhance the charge mul tiplication effect in the irradiated devices.\n\nhttp://indico.cern.ch/con tributionDisplay.py?contribId=14&sessionId=3&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=14&sessionId=3& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Room temperature annealing of the CCE in p-type Si sensors DTSTART;VALUE=DATE-TIME:20101118T082000Z DTEND;VALUE=DATE-TIME:20101118T084000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-17@cern.ch DESCRIPTION:Speakers: Dr. CASSE\, Gianluigi (Department of Physics)\nSet o f annealing measurements taken after ~ 200 days annealing at room temperat ure\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=17&sessionId =3&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=17&sessionId=3& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:3D Detector status at FBK DTSTART;VALUE=DATE-TIME:20101118T152000Z DTEND;VALUE=DATE-TIME:20101118T154000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-16@cern.ch DESCRIPTION:Speakers: GIACOMINI\, Gabriele (Fondazione Bruno Kessler)\, VI ANELLO\, Elisa (Fondazione Bruno Kessler)\nIn this talk we present the lat est results from the development of double sided\,double type column 3D de tectors with full passing columns at FBK. \nThe main issues related to the fabrication process and preliminary results from the electrical character ization of several test devices will be discussed.\n\nhttp://indico.cern.c h/contributionDisplay.py?contribId=16&sessionId=4&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=16&sessionId=4& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Welcome to Workshop DTSTART;VALUE=DATE-TIME:20101117T123000Z DTEND;VALUE=DATE-TIME:20101117T125000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-19@cern.ch DESCRIPTION:Speakers: MOLL\, Michael (CERN)\, CASSE\, Gianluigi (Departmen t of Physics)\nhttp://indico.cern.ch/contributionDisplay.py?contribId=19&s essionId=0&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=19&sessionId=0& confId=111191 END:VEVENT BEGIN:VEVENT SUMMARY:Annealing study of a high irradiated FZ CMS mini sensor with the a libava setup DTSTART;VALUE=DATE-TIME:20101118T090000Z DTEND;VALUE=DATE-TIME:20101118T092000Z DTSTAMP;VALUE=DATE-TIME:20130519T160358Z UID:indico-contribution-111191-18@cern.ch DESCRIPTION:Speakers: EBER\, Robert (Institut für Experimentelle Kernphys ik\, KIT)\nWith the fully operational ALiBaVa setup at Karlsruhe an anneal ing study of a standard CMS mini sensor (FZ\, n-type) was performed. The c hosen fluence of 7.5e14 Neq/cm2 lies well above expectation for strip sens ors after 300fb-1 at LHC and allows exploring the performance at even high er fluence\, e.g. due to higher integrated luminosity before replacement o f the strip Tracker or as material for S-LHC down to a radius of about 45c m. \n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=18&sessionId =3&confId=111191 LOCATION:CERN Council Chamber URL:http://indico.cern.ch/contributionDisplay.py?contribId=18&sessionId=3& confId=111191 END:VEVENT END:VCALENDAR