BEGIN:VCALENDAR VERSION:2.0 PRODID:-//CERN//INDICO//EN BEGIN:VEVENT SUMMARY:Farewell DTSTART;VALUE=DATE-TIME:20120907T030000Z DTEND;VALUE=DATE-TIME:20120907T030500Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-130@cern.ch DESCRIPTION:Speakers: UNNO\, Yoshinobu (High Energy Accelerator Research O rganization (JP))\nhttp://indico.cern.ch/contributionDisplay.py?contribId= 130&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=130&confId=1373 37 END:VEVENT BEGIN:VEVENT SUMMARY:High-Resolution Monolithic Pixel Detectors in SOI Technology DTSTART;VALUE=DATE-TIME:20120904T050000Z DTEND;VALUE=DATE-TIME:20120904T052000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-24@cern.ch DESCRIPTION:Speakers: Dr. MIYOSHI\, Toshinobu (KEK)\nWe are developing mon olithic pixel detectors in 0.2 um Fully-Deleted SOI\ntechnology. In a SOI wafer\, the photodiode is formed on the handling\nsubstrate after removing the silicon oxide. The SOI-CMOS circuits are\nfabricated on the 40-nm SOI thin film. Since the bump-bonding process\nis not required\, a high-gain pixel sensor with smaller pixel size less\nthan 20 um is achievable. In ge neral SOI-CMOS circuits have less\nparasitic capacitance and thus higher s peed readout system compared\nwith bulk-CMOS ones can be composed. Such de tectors can be applied\nto a wide range of applications\, not only in part icle physics but also\nin medicine\, space science and many other discipli nes. We have recently\ndeveloped several versions of integration-type pixe l detectors with\n8-17 um pixel sizes. The detectors were irradiated with visible laser\,\ninfrared laser\, X-ray and ionizing radiation sources. In this talk\,\nthe recent progress of the detector development\, the perfor mance\nof the detectors\, test results in imaging applications are present ed.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=24&sessionId =5&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=24&sessionId=5& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Development of Silicon-On-Insulator PHoton Imaging Array Sensor (S OPHIAS) for X-ray Free-Electron Laser DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-25@cern.ch DESCRIPTION:Speakers: Mr. OMODANI\, Motohiko (Japan Synchrotron Radiation Research Institute)\nSPring-8 Angstrom Compact free-electron LAser (SACLA) \, which is the second X-ray free-electron laser (XFEL) facility after LCL S at SLAC National Accelerator Laboratory achieved laser amplification on June 7th\, 2011. In the first user run of SACLA starting in March 2012\, 2 5 proposals from domestic/international institutions will be conducted\, w here more than half of the proposals will use the currently deployed Multi port CCD (MPCCD) detectors. In this talk\, we present the development stat us of the novel X-ray 2D detector\, SOPHIAS\, for SACLA to cover the scien tific cases\, where the currently deployed MPCCD detector does not able to reach.\nThe pixel structure of SOPHIAS is based on multi-via concept\; th e closely spaced implant regions within a single pixel is used for signal charge division. Each implant region is connected to the readout circuitry by metal via. By connecting non-equal number of via metal\, unproportiona l charge collection will be possible. Large portion of the signal is trans ferred to high gain amplifier sensitive to small signal regime\, whereas s mall portion of the charge is transferred to low gain amplifier. This pixe l with size of 30 um square is realized by using silicon-on-insulator (SOI ) sensor technology developed with KEK and Lapis Semiconductor Ltd. Last y ear\, we have introduced stitching and backside processing onto KEK multi- project wafer run process. We have succeeded in manufacturing with an area of 66 mm x 30 mm by stitching 5 shots of reticule size. The production is carried out by 0.2 um FD-SOI CMOS technology. Handle wafer\, which is the photodiode for x-ray detection\, has backside implanted\, laser-annealed\ , and aluminum coated surface so to shield the optical light without sacri ficing the quantum efficiency. The handle wafer is made of floating zone s ilicon which enables us to fully deplete 500 um thick handle wafer. The ch aracterization as well as the development of readout system of the sensor is now under progress.\n\nhttp://indico.cern.ch/contributionDisplay.py?con tribId=25&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=25&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Development of the Optical Blocking Layer for the X-ray CCD DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-26@cern.ch DESCRIPTION:Speakers: KOHMURA\, Takayoshi (Kogakuin University)\nSince an X-ray CCD\, especially a Back-Illuminated-CCD (BI-CCD)\, has a high detec tion efficiency for UV light and visible light as well as soft X-ray\, it is necessary for the X-ray CCD on board X-ray satellite to block visible light and UV light that become background.\n\nThe X-ray CCD cameras on boa rd previous X-ray satellites\, Suzaku\, Chandra and so on\, are equipped w ith the Optical Blocking Filter (OBF) that consists of polyimide and Alumi num to block the UV light and visible light. Therefore the OBF is a thin f ilter with about 250nm thick\, the OBF has a risk in tearing due to the vi bration during the launch.\nInstead of the OBF\, we have newly developed t he Optical Blocking Layer (OBL) \,which is consisted with 110nm thick Alum inum and 140nm thick Polyimide\, is coated directly to the surface of the BI-CCD in order to avoid the risk of corruption.\n\nWe have carried out a performance evaluation test\, such as the measurement of the X-ray quantu m efficiency and energy resolution\, the UV\, optical and X-ray transmissi on measurement of OBL\, and so on. In the measurement of UV and X-ray tran smission of OBL\, we carried out our experiment at the KEK photon factory and measured the X-ray transmission of OBL between 0.2-2.0keV that covers the absorption edges around C-K\, O-K\, Al-K\, and Si-K.\n\nIn this paper\ , we will show our results on the UV and Optical transmission of OBL.\nWe will also show the results on the measurement of the X-ray quantum efficie ncy of BI-CCD with OBL below 2keV.\n\nhttp://indico.cern.ch/contributionDi splay.py?contribId=26&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=26&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:GOTTHARD: a charge integrating silicon strip detector for XFEL and Synchrotron applications DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-27@cern.ch DESCRIPTION:Speakers: Dr. DINAPOLI\, Roberto (Paul Scherrer Institut)\nThe SLS Detector group at PSI has developed GOTTHARD\, a charge integrating s ilicon strip detector which\, thanks to the automatic \ngain switching fea ture\, can provide at the same time single photon resolution and a dynamic range as big as 10000 12~keV photons\, with a noise well below the photon statistics limit over the full range. \nThe detector module is made of te n readout ASIC (Application Specific Integrated Circuit) wire bonded to a silicon sensor with a 64mmx8mm sensitive area for a total of 1280 channels at 50 um pitch. A complete readout chain\, from the high speed digital co nverters to the Gigabit link for the data download\, is also integrated on the board. Burst frame rates up to 1MHz (60kHz in continuous streaming) c an be achieved. \nThe detector design will be presented together with the results from the commissioning phase. Operation of the device at both XFEL s and Synchrotron sources will be discussed.\n\nhttp://indico.cern.ch/cont ributionDisplay.py?contribId=27&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=27&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:High Resolution X-ray Imaging Sensor with SOI Technology DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-20@cern.ch DESCRIPTION:Speakers: Mr. TAKEDA\, Ayaki (Graduate University for Advanced Studies (SOKENDAI))\nA monolithic pixel detector with a 0.2 um fully-depl eted Silicon-On-Insulator (SOI) technology\, called SOIPIX\, has been deve loped. These are utilizing thick handle wafer of SOI structure as a radiat ion sensor to detect charged particles and X-ray.\nOne of the detectors\, called INTPIX4\, is 10.3 x 15.5 mm in size having 512 x 832 (~426 k) pixel s each 17 um square. It has integration type pixels and implements a corre lated double sampling (CDS) circuit in each pixel to suppress the reset no ise. As a result of the experiments\, we succeeded in the acquisition of a high resolution image with X-ray by back-illuminated. The chart pattern o f 20 line pairs / mm (25 um) was clearly obtained in exposure time of seve ral msec at room temperature. Furthermore\, we performed the cooling test. More detailed results including gain and energy resolution will be presen ted.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=20&sessionI d=14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=20&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:A Fast Hardware Tracker for the ATLAS Trigger System DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-21@cern.ch DESCRIPTION:Speakers: KIMURA\, Naoki (Waseda University (JP))\nSelecting i nteresting events with triggering is very challenging at the LHC due to th e busy hadronic environment. Starting in 2014 the LHC will run with an ene rgy of 14 TeV and instantaneous luminosities which could exceed 10^34 inte ractions per cm^2 and per second. The triggering in the ATLAS detector is realized using a three level trigger approach\, in which the first level ( L1) is hardware based and the second (L2) and third (EF) stag are realized using large computing farms. \nIt is a crucial and non-trivial task for t riggering to maintain a high efficiency for events of interest while suppr essing effectively the very high rates of inclusive QCD process\, which co nstitute mainly background. At the same time the trigger system has to be robust and provide sufficient operational margins to adapt to changes in t he running environment. In the current design track reconstruction can be performed only in limited regions of interest at L2 and the CPU requiremen ts may limit this even further at the highest instantaneous luminosities.\ nProviding high quality track reconstruction over the entire detector volu me for the L2 trigger decision would allow gains in efficiency and backgro und rejection for triggers on tau leptons\, b-hadrons and help reduce the luminosity dependence of isolation requirements for electrons and muons. T he Fast Track Trigger (FTK) is an ongoing upgrade project aimed at providi ng track reconstruction over the |eta|\n\nhttp://indico.cern.ch/contributi onDisplay.py?contribId=21&sessionId=14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=21&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:High-Voltage Pixel Detectors in Commercial CMOS Technologies for A TLAS\, CLIC and Mu3e Experiments DTSTART;VALUE=DATE-TIME:20120906T000000Z DTEND;VALUE=DATE-TIME:20120906T002000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-22@cern.ch DESCRIPTION:Speakers: Dr. PERIC\, Ivan (Ruprecht-Karls-Universitaet Heidel berg (DE))\nHigh voltage particle detectors in commercial CMOS technologie s are detector family that allows implementation of low-cost\, thin and ra diation-tolerant detectors with good time resolution. The unique property of these detectors is that the pixel electronic is embedded inside sensor diodes. For this reason\, we refer to the detector type as the "smart diod e” array - SDA. In the R/D phase of the development\, we have demonstrat ed a radiation tolerance of 10^15 n_eq/cm^2\, nearly 100% detection effici ency and a spatial resolution of about 3 micrometers. \nSince 2011 SDAs ha ve first applications: The technology is presently the main option for the pixel detector of the planned Mu3e experiment at PSI (Switzerland). Two 5 0-micrometer thin detector layers with 200 million pixels are planned. A p rototype sensor with small pixel matrix has been designed in the standard AMS 180nm HV CMOS process and successfully tested. First tests with the th inned sensors will be performed soon.\nThanks to its high radiation tolera nce\, the SDA technology is also seen at CERN as a promising alternative t o the standard options for ATLAS upgrade and CLIC. \nIn order to test the concept\, within ATLAS upgrade R&D\, we are currently exploring an active pixel detector demonstrator HV2FEI4\; also implemented in the AMS 180nm HV process. This detector has a pixel pitch of 33 um x 125 um. A group of th ree detector pixels is coupled to one FE-I4 pixel readout channel. The con tacts between the detector- and readout chip can be established either cap acitively or by bump-bonding. The first measurements with the capacitively coupled pixel detectors will be performed in May and a test beam measurem ent is planned for June 2012.\n\n We will present the current status of th e projects and the experimental results.\n\nhttp://indico.cern.ch/contribu tionDisplay.py?contribId=22&sessionId=7&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=22&sessionId=7& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Monolithic crystals with SiPMs read-out: optical coupling optimiza tion DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-23@cern.ch DESCRIPTION:Speakers: Dr. GONZALEZ MARTINEZ\, Antonio Javier (Institute of Instrumentation for Molecular Imaging)\nIn this work we present a method to efficiently collect scintillation light at the time to reduce photosens or active area. We have applied this procedure on gamma detectors for PET devices based on continuous crystals and SiPM detectors.\n\nThe use of con tinuous scintillation crystals preserves the spatial distribution of scint illation light for each γ-ray event\, which can be reconstructed with a s mall number of statistical moments\, reducing the number of analogue-to-di gital conversion channels. However\, in contrast to pixelated crystals\, t hey account for moderate edge effects which specially depend on the crysta l thickness. Several configurations for crystal surface treatment have bee n studied aiming at preserving the original scintillation light distributi on. The initial tests suggested\, in order to optimize the light collectio n\, a reduction of the acceptance angle of the scintillation photons in or der to keep a compromise between small edge effects and statistically good light transmission. Optical devices positioned between the scintillation crystal and the photosensor\, like the so-called faceplates or some light guides\, make possible to reduce the acceptance angle of the incoming ligh t.\n\nSince it is part of this research also to design a detection block c ompatible with magnetic fields\, we have chosen SiPM which are suitable to work under the fields of for instance magnetic resonances. However\, due to their main components\, they present a number of dark counts that squar ely increase with their active area size and could degrade the impinging p hoton position determination when using multiplexing read-out approaches. Therefore\, we have designed an array of SiPMs with 1 mm2 detection area. In order to satisfy both requirements small acceptance angle and reduce in dividual detection area\, we have proposed to use light guides to efficien tly transfer the scintillation light to each SiPM.\n\nThe optical design o f a light guide has been optimized using the ZEMAX simulation program that is based on light propagation within the crystal and guides. An optimal c onfiguration that represents a balance between light detection efficiency and cross talk between channels was found. This configuration has already been implemented by developing a special cast for an array of 8 light guid es using PMMA as material. A final matrix of 256 light guides is foreseen to be built by gluing 32 of those arrays with the help of a plastic grid\, ensuring a very low cross-talk (12 dB) and good transmission of nearing 7 0%. \n\nIn this work we will present the first results of monolithic LYSO crystals coupled to an array of 64 and 256 SiPMs. We have tested different LYSO thicknesses\, and we have found that our design allows using crystal s blocks with a thickness of more than 18 mm without degrading the spatial resolution caused by edge effects.\n\nhttp://indico.cern.ch/contributionD isplay.py?contribId=23&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=23&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Upgrade of the ALICE Inner Tracking System DTSTART;VALUE=DATE-TIME:20120903T070000Z DTEND;VALUE=DATE-TIME:20120903T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-28@cern.ch DESCRIPTION:Speakers: Dr. ROSSEGGER\, Stefan (CERN)\nThe Inner Tracking Sy stem (ITS) is the ALICE key detector for the study of heavy flavour produc tion at LHC. This is attained by the identification of short-lived hadrons containing heavy quarks which have a mean proper decay length in the orde r of 100-300 um. To accomplish this task the ITS is composed of six cylind rical layers of silicon detectors (two pixel\, two drift and two strip) wi th a radial coverage from 3.9 to 43 cm and a material budget of 1.1 % X0 p er layer. \n\nIn order to enhance the ALICE physics capabilities and in pa rticular the tracking performance for heavy-flavour detection the possibil ity of an ITS upgrade has been studied in great detail. It will make use o f the spectacular progress made in the field of imaging sensors over the l ast ten years as well as the possibility to install a smaller radius beamp ipe. The upgraded detector will have greatly improved features in terms of : the impact parameter resolution\, standalone tracking efficiency at low p_t\, momentum resolution and readout capabilities.\n\nThe usage of the mo st recent monolithic and/or hybrid pixel detector technologies allow the i mprovement of the detector material budget and the intrinsic spatial resol ution both by a factor of three with respect to the present ITS. The insta llation of a smaller beam-pipe will allow reducing the distance between th e first detector layer and the interaction vertex. Under these assumptions \, simulations show that an overall improvement of the impact parameter re solution by a factor of three is possible.\n\nAfter finalizing the Concept ual Design Report [1]\, which covers the design and performance requiremen ts\, the upgrade options as well as the necessary R&D efforts\, the projec t has now entered the approval phase. An intensive R&D program has been la unched with the objective to review the different technological options un der consideration. The new detector should be ready to be installed during the long LHC shutdown period scheduled in 2017-2018.\n\nThis contribution will present the studies on the upgrade of the ALICE ITS detector. In par ticular\, the different options for the detector technologies and the dete ctor layout\, as well as the first results of the R&D activities\, will be presented.\n\n[1] Conceptual Design Report for the Upgrade of the ALICE I TS\, CERN-LHCC-2012-05\, April 2012\n\nhttp://indico.cern.ch/contributionD isplay.py?contribId=28&sessionId=3&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=28&sessionId=3& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:The ultra low mass cooling system of the Belle II DEPFET detector DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-4@cern.ch DESCRIPTION:Speakers: Dr. MARINAS PARDO\, Carlos (Bonn University)\nThe ne w e$^{+}$e$^{-}$ colliders impose unprecedented demands to the performance of the vertex detectors. To achieve the required resolution in the vertex reconstruction\, besides highly segmented pixel detectors\, the material budget has to be kept at very low levels to reduce the multiple Coulomb sc attering. These requirements are even more challenging in the case of the new Japanese Super Flavour Factory (SuperKEKB) where the very low momentum of the particles in the final state requires a vertex detector with less than 0.2%~X$_{0}$ per layer\, together with 50x50~$\\mu$m$^{2}$ pixels\, t o achieve the aimed resolution of 8.5~$\\mu$m.\n\nAs a consequence\, there is an obvious impact on the cooling system\, that has to be carefully des igned\, not allowing active cooling pipes inside the acceptance region. Du e to the low power dissipation of the DEPFET sensor and the special geomet ry of the detectors (with the front end electronics placed at both ends of the ladder)\, the system can be cooled by circulating cold CO$_{2}$ throu gh the massive support structures outside of the acceptance\, while the se nsitive area relies on forced convection with cold dry air.\n\nIn the talk not only full thermal simulations will be presented but also measurements done with a real mock up\, showing that a proper cooling of the vertex de tector can be made using this approach.\n\nhttp://indico.cern.ch/contribut ionDisplay.py?contribId=4&sessionId=14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=4&sessionId=14& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Silicon Strip Detectors for ATLAS at the HL-LHC Upgrade DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-8@cern.ch DESCRIPTION:Speakers: IKEGAMI\, Yoichi (High Energy Accelerator Research O rganization (JP))\nWhile the Large Hadron Collider (LHC) at CERN continues to deliver increasing amounts of luminosity to the experiments\, a phased upgrade of the LHC is planned\, ultimately aimed at a luminosity of ten t imes the LHC design luminosity (HL-LHC). To cope with the expected harsh o perating conditions in terms of particle rates and radiation dose\, the AT LAS collaboration is developing a new tracker. In our presentation\, we gi ve an overview of the ATLAS tracker upgrade project\, focusing on the sili con strip layers. We discuss technology choices for the sensors and presen t mechanical and electronic aspects of proposed module designs.\n\nhttp:// indico.cern.ch/contributionDisplay.py?contribId=8&sessionId=14&confId=1373 37 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=8&sessionId=14& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Multi-Channel LuAG-APD Pixel Array with ToT Readout System DTSTART;VALUE=DATE-TIME:20120905T020000Z DTEND;VALUE=DATE-TIME:20120905T022000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-87@cern.ch DESCRIPTION:Speakers: Dr. SHIMAZOE\, Kenji (The University of Tokyo)\nA 14 4-channel Pr:LuAG-APD detector is designed and fabricated for medical appl ication. The pixel of the crystal is 2mm x 2mm x 10mm and individually cou pled with UV-enhanced 12 x 12 Avalanche Photo Diode array. The APD's pixel s are individually connected with Time over Threshold based ASIC and sent to DAQ FPGA. ToT-ASIC is fabricated with 0.25um TSMC CMOS and the power di ssipation is 230mW/board. FPGA is programmed to calibrate individual thres holds and digital multiplexing. The measured timing resolution is 4ns/modu le and transmission image is successfully acquired.\n\nhttp://indico.cern. ch/contributionDisplay.py?contribId=87&sessionId=6&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=87&sessionId=6& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Welcome party DTSTART;VALUE=DATE-TIME:20120902T090000Z DTEND;VALUE=DATE-TIME:20120902T120000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-121@cern.ch DESCRIPTION:Speakers: \nhttp://indico.cern.ch/contributionDisplay.py?contr ibId=121&sessionId=0&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan Outdoor pool side URL:http://indico.cern.ch/contributionDisplay.py?contribId=121&sessionId=0 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Dinner (BBQ) DTSTART;VALUE=DATE-TIME:20120904T100000Z DTEND;VALUE=DATE-TIME:20120904T120000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-122@cern.ch DESCRIPTION:Speakers: \nhttp://indico.cern.ch/contributionDisplay.py?contr ibId=122&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan Loggers house URL:http://indico.cern.ch/contributionDisplay.py?contribId=122&confId=1373 37 END:VEVENT BEGIN:VEVENT SUMMARY:Excursion DTSTART;VALUE=DATE-TIME:20120905T033000Z DTEND;VALUE=DATE-TIME:20120905T120000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-123@cern.ch DESCRIPTION:Speakers: \nSazae-do\, Tsukuga-jo Castle\, Restaurant "Takino" . This event is supported by Dectris.\n\nhttp://indico.cern.ch/contributio nDisplay.py?contribId=123&confId=137337 LOCATION:Aizu-Wakamatsu city URL:http://indico.cern.ch/contributionDisplay.py?contribId=123&confId=1373 37 END:VEVENT BEGIN:VEVENT SUMMARY:Conference dinner "Japanese cuisine" DTSTART;VALUE=DATE-TIME:20120906T100000Z DTEND;VALUE=DATE-TIME:20120906T120000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-124@cern.ch DESCRIPTION:Speakers: \nhttp://indico.cern.ch/contributionDisplay.py?contr ibId=124&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan Japanese Tatami Banq uet room "Bandai" URL:http://indico.cern.ch/contributionDisplay.py?contribId=124&confId=1373 37 END:VEVENT BEGIN:VEVENT SUMMARY:Track and vertex reconstruction in the ATLAS Experiment DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-59@cern.ch DESCRIPTION:Speakers: HAMANO\, Kenji (University of Melbourne (AU))\nThe t rack and vertex reconstruction algorithms of the ATLAS Inner Detector have \ndemonstrated excellent performance in the early data from the LHC. Howev er\, the\nrapidly increasing number of interactions per bunch crossing int roduces new\nchallenges both in computational aspects and physics performa nce. The combination\nof both silicon and gas based detectors provides hig h precision impact parameter and\nmomentum measurement of charged particle s\, with high efficiency and small fake\nrate. Vertex reconstruction is us ed to identify with high efficiency the hard scattering\nprocess and to me asure the amount of pile-up interactions\, both aspects are crucial\nfor m any physics analyses. The performance of track and vertex reconstruction\n efficiency and resolution achieved in the 2011 data-taking period and \nfo r the 2012 data-taking\, where improved algorithms will be used\, are pres ented.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=59&sessio nId=14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=59&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Neural network based cluster creation in the ATLAS silicon Pixel D etector DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-58@cern.ch DESCRIPTION:Speakers: ANDREAZZA\, Attilio (Università degli Studi e INFN Milano (IT))\nThe read-out from individual pixels on planar semi-conducto r sensors are grouped\ninto clusters to reconstruct the location where a c harged particle passed through the\nsensor. The resolution given by indivi dual pixel sizes is significantly improved by\nusing the information from the charge sharing between pixels. Such analog cluster\ncreation technique s have been used by the ATLAS experiment for many years to\nobtain an exce llent performance. However\, in dense environments\, such as those\ninside high-energy jets\, clusters have an increased probability of merging the charge\ndeposited by multiple particles. Recently\, a neural network based algorithm which\nestimates both the cluster position and whether a cluste r should be split has been\ndeveloped for the ATLAS Pixel Detector. The al gorithm significantly reduces\nambiguities in the assignment of pixel dete ctor measurement to tracks within jets and\nimproves the position accuracy with respect to standard interpolation techniques by\ntaking into account the 2-dimensional charge distribution. The implementation of the\nneural network\, the training parameters and performance of the new clustering wi ll be\npresented. Significant improvements of the track and vertex resolut ion obtained using\nthis new method will be presented using Monte Carlo si mulated data and compared to\ndata recorded with the ATLAS detector will b e given. The resulting improvements to\nboth track reconstruction and the identification of jets containing b-quarks will be\ndiscussed.\n\nhttp://i ndico.cern.ch/contributionDisplay.py?contribId=58&sessionId=14&confId=1373 37 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=58&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Status of the ATLAS Pixel Detector at the LHC and its performance after three years of operation. DTSTART;VALUE=DATE-TIME:20120903T010000Z DTEND;VALUE=DATE-TIME:20120903T013000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-55@cern.ch DESCRIPTION:Speakers: ANDREAZZA\, Attilio (Università degli Studi e INFN Milano (IT))\nThe ATLAS Pixel Detector is the innermost detector of the A TLAS experiment at the Large Hadron Collider at CERN\, providing high-reso lution measurements of charged particle tracks in the high radiation envir onment close to the collision region. This capability is vital for the ide ntification and measurement of proper decay times of long-lived particles such as b-hadrons\, and thus vital for the ATLAS physics program.\nThe det ector provides hermetic coverage with three cylindrical layers and three l ayers of forward and backward pixel detectors.\nIt consists of approximate ly 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. \n\nIn this talk\, results from the suc cessful operation of the Pixel Detector at the LHC and its status after t hree years of operation will be presented\, including monitoring\, calibr ation procedures\, timing optimization and detector performance. The det ector performance is excellent: ~96 % of the pixels are operational\, nois e occupancy and hit efficiency exceed the design specification\, and a goo d alignment allows high quality track resolution.\n\nhttp://indico.cern. ch/contributionDisplay.py?contribId=55&sessionId=2&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=55&sessionId=2& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Impact of pixel size and shape on physics analysis DTSTART;VALUE=DATE-TIME:20120906T075000Z DTEND;VALUE=DATE-TIME:20120906T081000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-54@cern.ch DESCRIPTION:Speakers: NAGELI\, Christoph (Eidgenoessische Tech. Hochschule Zuerich (CH))\nA Monte Carlo study will be presented to quantify the impa ct of the z resolution of the pixel detector to a new physics search.\nThe choice of the pixel shape and size in the r-\\phi and z-directions result s in different position resolutions\, that in turn\ninfluence the selectio n power for the analysis of a certain physics channel. The presented study illustrates the effect of the pixel z\nresolution on signal and backgroun d candidates in the case of the search for the rare decay B_s \\to \\mu\\m u. Within the framework of the\nSM this decay channel is expected at the l evel of \\sim 10^{-9} and therefore requires a very high background reject ion ratio to reach\nthe sensitivity necessary to observe a signal. The stu dy will compare and illustrate the physics performance of this rare decay for different\nscenarios.\n\nhttp://indico.cern.ch/contributionDisplay.py? contribId=54&sessionId=8&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=54&sessionId=8& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Monitoring radiation damage in the ATLAS Pixel Detector DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-57@cern.ch DESCRIPTION:Speakers: ANDREAZZA\, Attilio (Università degli Studi e INFN Milano (IT))\nThe record breaking instantaneous luminosities of 10^33 cm- 2 s-1 recently surpassed at the Large Hadron Collider generate a rapidly i ncreasing particle fluence in the ATLAS Pixel Detector. As the radiation d ose accumulates\, the first effects of radiation damage are now observable in the silicon sensors. A regular monitoring program has been conducted a nd reveals an increase in the silicon leakage current\, which is found to be correlated with the rising radiation dose recorded by independent senso rs within the inner detector volume. Such measurements are useful to valid ate the digitization model that has been developed to simulate radiation d amage effects\, including charge trapping\, electric field modification an d realistic signal induction on the electrodes. In the longer-term crystal defect formation in the silicon bulk is expected to alter the effective d oping concentration\, producing type-inversion and ultimately an increase of the voltage required to fully deplete the sensor.\n\nhttp://indico.cer n.ch/contributionDisplay.py?contribId=57&sessionId=14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=57&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Overview of the ATLAS Insertable B-Layer (IBL) Project DTSTART;VALUE=DATE-TIME:20120903T022000Z DTEND;VALUE=DATE-TIME:20120903T025000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-56@cern.ch DESCRIPTION:Speakers: ROHNE\, Ole (University of Oslo (NO))\nThe upgrades for the ATLAS Pixel Detector will be staged in preparation for high\nlumin osity LHC. The first upgrade for the Pixel Detector is the construction of a new\npixel layer which will be installed during the first shutdown of t he LHC machine\, in\n2013-14. The new detector\, called the Insertable B-l ayer (IBL)\, will be installed between\nthe existing Pixel Detector and a new\, smaller radius beam-pipe at a radius of 3.3 cm.\nThe IBL has require d the development of several new technologies to cope with\nincreased radi ation and pixel occupancy and also to improve the physics performance\nthr ough reduction of the pixel size and a more stringent material budget. The IBL\npresents several changes to the design of the present hybrid pixel s ystem: two different\nand promising silicon sensor technologies\, planar n -in-n and 3D\, will be used for the IBL.\nA new read-out chip FE-I4 has be en designed in 130 nm technology\, the material budget\nis minimized by us ing new lightweight mechanical support materials and a CO2 based\ncooling system has been developed. An overview of the IBL project\, of the module\ ndesign and the qualification for these sensor technologies with particula r emphasis on\nirradiation and beam tests will be presented.\n\nhttp://ind ico.cern.ch/contributionDisplay.py?contribId=56&sessionId=2&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=56&sessionId=2& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Thin n-in-p pixel sensors and the SLID-ICV vertical integration te chnology for the ATLAS upgrade at HL-LHC DTSTART;VALUE=DATE-TIME:20120907T005000Z DTEND;VALUE=DATE-TIME:20120907T011000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-51@cern.ch DESCRIPTION:Speakers: MACCHIOLO\, Anna (Max-Planck-Institut fuer Physik (W erner-Heisenberg-Institut) (D)\nThe R&D activity here presented is focused on the development of a new module concept for the upgrade of the ATLAS p ixel system at the High Luminosity LHC (HL-LHC). It employs thin pixel sen sors together with a novel vertical integration technology offered by the Fraunhofer Institute EMFT in Munich\, consisting of the Solid-Liquid-Inter Diffusion (SLID) interconnection\, which is an alternative to the standar d bump-bonding\, and Inter Chip Vias (ICV) for routing signals vertically through the readout chips. \nTwo productions of thin pixel sensors\, with an active thickness of 75 um and 150 um\, were completed using a process developed at the Semiconductor Laboratory of the Max-Planck-Institute for Physics (HLL) and connected to the FE-I3 and FE-I4 ATLAS read-out chips\, respectively.\nDue to their cost effectiveness and radiation hardness n-in -p silicon devices are a promising candidate to replace the present n-in-n sensors in the radiation environment of HL-LHC and to instrument the larg e area of the new ATLAS pixel system. Furthermore thin pixel sensors offer a reduced contribution to the material budget and a higher charge collect ion efficiency (CCE) at the radiation levels expected in the inner pixel l ayers at HL-LHC. \nThe 75 um thick FE-I3 compatible sensors have been conn ected with SLID to read-out chips and were irradiated up to fluence of 5e1 5 n_eq/cm². A CCE close to 100% has been measured at bias voltages as low as 500 V and the SLID interconnection efficiency proved not to be affecte d by these radiation levels. \nThe 150 um thick sensors were interconnecte d by bump-bonding to the new ATLAS pixel read-out chip FE-I4. An excellent performance in terms of charge collection efficiency and noise occupancy were obtained before and after irradiation at 5e15 n_eq/cm². \nThe result s\, obtained with laboratory and beam tests\, for these two thin pixel pro ductions will be compared with those of n-in-p pixels of standard thicknes s.\nOn the thin FE-I3 modules ICVs\, with a cross section of 3 um x10 um\, are going to be etched at the positions of the original wire bonding pads of the FE-I3 chip. This step is meant to prove the feasibility of the sig nal transport to the newly created readout pads on the backside of the chi ps\, allowing for four side buttable devices without the presently used ca ntilever for wire bonding. The status of the ICVs preparation on the FE-I3 wafer will be presented.\n\nhttp://indico.cern.ch/contributionDisplay.py? contribId=51&sessionId=10&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=51&sessionId=10 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Proton Radiation Damage Experiment on P-Channel CCD for an X-ray C CD camera onboard the Astro-H satellite DTSTART;VALUE=DATE-TIME:20120906T043000Z DTEND;VALUE=DATE-TIME:20120906T045000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-50@cern.ch DESCRIPTION:Speakers: MORI\, koji (University of Miyazaki)\nWe report on a proton radiation damage experiment on P-Channel CCD\nnewly developed for an X-ray CCD camera onboard the Astro-H\nsatellite. The device has been ex posed up to 10^9 protons/cm2 at 6.7\nMeV. The charge transfer inefficiency (CTI) is measured as a function\nof radiation dose. In comparison with th e CTI actually measured in the\nCCD camera onboard the Suzaku satellite fo r 6 years\, we confirm that\nthe new type of P-Channel CCD is radiation to lerant enough for space\nuse. The temperature dependence of the CTI is als o reported.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=50&s essionId=8&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=50&sessionId=8& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Development of the Pixel OR SOI Detector for High Energy Physics E xperiments DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-53@cern.ch DESCRIPTION:Speakers: ONO\, Yoshimasa (Tohoku University (JP))\nA Sillicon -On-Insulator (SOI) technology is suitable for vertex detector for high en ergy physics experiments since complex functionalities can be fabricated o n the SOI wafer with small material thanks to the monolithic structure.\nW e developed a new sensor processing scheme "PIXOR(PIXel OR)" for pixel det ectors using a Lapis 0.25um SOI process.\nAn analog signals from each pixe lated sensor is divided into two dimensional directions\, and $2n^2$ signa l channels from small $n$ by $n$ pixel matrix are taken OR as $n$ column a nd $n$ row channels\, then the signals are processed by readout circuit in each small matrix.\nThis PIXOR scheme reduces number of readout channels and avoids a deterioration of intrinsic position resolution due to large c ircuit area\, that was common issue for monolithic pixel detectors.\nThis feature allows high resolution\, low occupancy and on-sensor signal proces sing at the same time.\nWe present the successful results of the PIXOR rea dout scheme using the first prototype.\n\nhttp://indico.cern.ch/contributi onDisplay.py?contribId=53&sessionId=14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=53&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Beamtest of novel n-in-p strip sensors for very high radiation env ironment DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-52@cern.ch DESCRIPTION:Speakers: KUBOTA\, Tomonori (Tokyo Institute of Technology (JP ))\nResults on a beam test of n-in-p silicon strip sensors aimed for the A TLAS SCT(Semi-Conductor Tracker) upgrades for High Luminosity LHC(HL-LHC) are presented. This Beam test was operated with a new DAQ system consistin g of a universal read-out board called 'SEABAS'and a beam tracking system with the spacial resolution less than 5 micro meters\, and held at RCNP in December 2011. Behaviors of the new 1 cm x 1 cm n-in-p miniature sensors before and after irradiation up to 10^15 n_eq/cm^2 are discussed. Collecte d charge of non-irradiated is sensor is 6fC at full depletion voltage\, wh ile of 10^15 n_eq/cm^2 irradiated sensor is 4.2fC. The effective region on the strip edges around PTP structures of the non-irradiated sensor reache d to the bias rail\, while of the 10^15 n_eq/cm^2 irradiated sensor it rea ched only up to strip edges.\n\nhttp://indico.cern.ch/contributionDisplay. py?contribId=52&sessionId=14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=52&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Scribe-Cleave-Passivate (SCP) Slim Edge Technology for Silicon Sen sors DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-115@cern.ch DESCRIPTION:Speakers: FADEYEV\, Vitaliy (University of California\,Santa C ruz (US))\nWe are pursuing scribe-cleave-passivate (SCP) technology of mak ing “slim edge” sensors. Such sensors have only a minimal amount of in active peripheral region\, which benefits construction of large-area track er and imaging systems. Key application steps of this method are surface s cribing\, cleaving\, and passivation of the resulting sidewall. We are wor king on developing both the technology and physical understanding of the p rocessed devices performance. Our recent advances include: a) further inve stigation of scribing technologies\, b) new methods of sidewall passivatio n\, c) investigation of automated processing machines for scribing and cle aving\, d) investigation of the charge collection near the edge\, e) radia tion hardness of the processed devices. We will also report on the status of devices processed at the request of the RD50 collaborators.\n\nhttp://i ndico.cern.ch/contributionDisplay.py?contribId=115&sessionId=14&confId=137 337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=115&sessionId=1 4&confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:History and prospect of the low-noise CMOS sensor DTSTART;VALUE=DATE-TIME:20120904T023000Z DTEND;VALUE=DATE-TIME:20120904T030000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-114@cern.ch DESCRIPTION:Speakers: KAWAHITO\, Shoji (Shizuoka University)\nThis paper r eviews the device and circuit technologies for low-noise CMOS image sensor s(CISs) and discusses their future prospect. The first innovation in the l ow-noise CISs has been done by the CMOS active pixel sensor (APS) using an amplifier and a pinned photodiode in each pixel. The in-pixel amplifier e liminates a large stray capacitance in the signal detection and increases the charge-to-voltage conversion gain. The pinned photodiode and the techn ique of in-pixel charge transfer allow us to greatly reduce dark current n oise and cancel kTC noise. In global shutter CISs\, the two-stage charge t ransfer using pinned diodes has solved their noise problems. In the past 1 0 years\, efforts are devoted to the reduction of noises due to the in-pix el transistor and peripheral readout circuits. The introduction of low-noi se transistors as the in-pixel amplifier and high-gain noise reduction tec hniques used in the column readout circuits has effectively reduced the th ermal\, 1/f and RTS (random telegraph signal) noises of transistors and a sub-electron noise level has been attained. This paper also discusses the possibility of true photon counting by further reduction of readout noise and very high charge-to-voltage conversion gain.\n\nhttp://indico.cern.ch/ contributionDisplay.py?contribId=114&sessionId=4&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=114&sessionId=4 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Status of PHENIX Silicon Pixel Detector DTSTART;VALUE=DATE-TIME:20120903T062000Z DTEND;VALUE=DATE-TIME:20120903T064000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-88@cern.ch DESCRIPTION:Speakers: Dr. TAKETANI\, Atsushi (RIKEN)\nThe PHENIX detector at RHIC has been equipped Silicon Pixel Detector for identifying the botto m and charm particle by measuring secondary vertex point in the Sqrt(S_NN) = 200GeV Au-Au collisions and Sqrt(s)=500GeV polarized collisions\, with Silicon stripixel detectors. The detector consists of 50*400 micron pixel sensors\, bump bonded readout chips\, high density readout flexible print circuit board and carbon composite holders. 25 micron aluminum wires conne ct among readout chips and print circuit boards. They are encapsulated by the silicone adhesives to protect mechanically and vibration force from Lo rentz force in the strong magnetic field. Due to differences in CTE betwee n the pixel stave and the silicone encapsulant\, thermal cycling promoted the breaking of wire bonds. The encapsulated silicone and wires were remov ed from broken ladders\, bonding pad were cleaned\, and then wires were bo nded. Since Silicone has 300 ppm/deg expansion coefficient and other mater ials have 30 ppm/deg\, another Silicone\, which has similar expansion coef ficient\, but is much softer\, was chosen. New re-assembled ladders was te sted with some heat shock test and survived. We would like to report the s tatus of the PHENIX Silicon Pixel Detector operations as well as the repai ring process of the broken wires.\n\nhttp://indico.cern.ch/contributionDis play.py?contribId=88&sessionId=3&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=88&sessionId=3& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Flat x-ray detectors and their applications DTSTART;VALUE=DATE-TIME:20120904T012000Z DTEND;VALUE=DATE-TIME:20120904T015000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-111@cern.ch DESCRIPTION:Speakers: SPAHN\, Martin ()\nThe applications of x-ray imaging in the medical field are manifold and range from computer tomography (CT) \, radiography\, angiography to mammography. Depending on the application\ , the x-ray systems support diagnostic and/or interventional procedures an d generate 2D (projection) or 3D (volumetric) data sets. The performance r equirements for the different application can vary strongly with respect t o pixel size\, frame rates\, x-ray flux and detector size.\nHealthcare tre nds such as the change of the demographic structure\, outcome orientation of procedures or higher efficiency influence the design of new systems and their components such as the x-ray detector. High dose efficiency\, suppo rt of new applications and cost efficiency reflect these demands.\nToday´ s predominant x-ray detector technologies are integrating detectors and ar e based on scintiallators\, in particular CsI\, and photodiodes of amorpho us silicon (radiography\, angiography) or crystalline silicon (CT) or on t he direct convertering material selenium (mammography).\nFuture developmen ts will include the optimization of current technologies but may also brin g new technologies such as CMOS and counting pixel devices in order to fur ther increase performance characteristics or allow new applications.\n\nht tp://indico.cern.ch/contributionDisplay.py?contribId=111&sessionId=4&confI d=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=111&sessionId=4 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Progress of SOI Pixel Process DTSTART;VALUE=DATE-TIME:20120903T072000Z DTEND;VALUE=DATE-TIME:20120903T075000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-110@cern.ch DESCRIPTION:Speakers: ARAI\, Yasuo (High Energy Accelerator Research Organ ization (JP))\nTBD\n\nhttp://indico.cern.ch/contributionDisplay.py?contrib Id=110&sessionId=3&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=110&sessionId=3 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Development and Deployment Status of X-ray 2D Detector for SACLA DTSTART;VALUE=DATE-TIME:20120903T233000Z DTEND;VALUE=DATE-TIME:20120904T000000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-112@cern.ch DESCRIPTION:Speakers: HATSUI\, Takaki (RIKEN)\nTBD\n\nhttp://indico.cern.c h/contributionDisplay.py?contribId=112&sessionId=4&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=112&sessionId=4 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:GEANT4 and GDML detector simulation framework DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-82@cern.ch DESCRIPTION:Speakers: BUYTAERT\, Jan (CERN)\nAn accurate description of th e geometry and material density in modern particle detectors becomes ever more critical as the mass of these devices decreases\, and the detectors a im to be sensitive to low pt physics. An example in point is the LHCb VEL O upgrade\, where the pixel planes at the upgrade will be situated very cl ose to the beam line\, but separated from the primary vacuum by a thin foi l with a complex corrugated shape. Understanding the shape optimization f or physics performance and the expected performance has led to the develop ment of a new software approach for simulating the material\, whereby the mechanical CAD drawings can be directly imported into the GEANT4 material via a GDML (Geometry Description Markup Language) interface which converts shapes into tesselated solids made up of triangular or quadrangular facet s forming a closed space. This allows a more accurate and less labour int ensive geometry implementation than tradiational XML approaches. First re sults will be shown from this method\, together with the approaches taken to generalize\, test\, and optimize the CPU performance of the method.\n\n http://indico.cern.ch/contributionDisplay.py?contribId=82&sessionId=15&con fId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=82&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Performance of the X-ray CCD coated with Optical Blocking Layer fo r SXI onboard ASTRO-H DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-83@cern.ch DESCRIPTION:Speakers: Mr. IKEDA\, Shoma (Kogakuin University)\nWe have dev eloped the back-illuminated X-ray CCD camera (BI-CCD) for Soft X-ray Image r (SXI) onboard ASTRO-H. Since the X-ray CCD\, especially BI- CCD has a hi gh sensitivity not only for in X-ray but also in both visible light and UV light\, X-ray CCD for SXI is directly coated the 100nm thick aluminum on the surface of the CCD in order to block visible light\, and we name this aluminum layer OBL (Optical Blocking Layer). We will install Contamination Blocking Filter (CBF) in front of the CCD to protect the CCD from contami nants adsorbed onto the CCD. This CBF is made from 30nm thick aluminum and 200nm thick polyimide\, and CBF can also cut off visible light as well as UV light.\n We have developed the prototype CCD for SXI coated with OBL a nd we have measured the energy resolution\, dark current\, quantum efficie ncy\, and so on by irradiating the soft X-ray at KEK-PF and the X-ray from 55Fe. We have also measured the optical transmission of OBL and confirmed the optical transmission of OBL is an order of 10-5 which was the same or der of our expected value.\nWe will show the performance of the proto-type CCD for SXI\, mainly focusing on QE at soft X-ray range below 2keV\, as w ell as the optical transmission of OBL.\n\nhttp://indico.cern.ch/contribut ionDisplay.py?contribId=83&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=83&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:VELOPix ASIC development for LHCb VELO Upgrade DTSTART;VALUE=DATE-TIME:20120905T002000Z DTEND;VALUE=DATE-TIME:20120905T004000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-80@cern.ch DESCRIPTION:Speakers: Dr. VAN BEUZEKOM\, Martin (NIKHEF (NL))\nThe upgrade of the LHCb experiment\, planned for 2018\, will transform the readout of the entire experiment to a triggerless system operating at 40 MHz. All da ta reduction algorithms will be run in a high level software farm\, and wi ll have access to event information from all subdetectors. This approach will give great power and flexibility in accessing the physics channels of interest in the future\, in particular the identification of flavour tagg ed events with displaced vertices. The data acquisition and front end ele ctronics systems require significant modification to cope with the enormou s throughput of data. For the silicon vertex locator (VELO) a dedicated d evelopment is underway for a new ASIC\, VELOPix\, which will be a derivati ve of the Timepix/Medipix family of chips. The chip will be radiation har d and be able to cope with pixel hit rates of above 500 MHz\, highly non-u niformly distributed over the ~2 cm^2 chip area. The chip will incorporat e local intelligence in the pixels for time-over-threshold measurements\, time-stamping and sparse readout. It must in addition be low power\, rad iation hard\, and immune to single event upsets. In order to cope with th e datarates and use the pixel area most effectively\, an on-chip data comp ression scheme will integrated. This contribution will describe the requi rements of the LHCb VELO upgrade\, give an overview of the digital archite cture being developed specifically for the readout chip\, and describe the off-detector signal processing\, including time ordering\, clustering and pattern recognition algorithms. First results from prototype sensors and ASICs will be presented.\n\nhttp://indico.cern.ch/contributionDisplay.py? contribId=80&sessionId=6&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=80&sessionId=6& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:The LHCb VELO Upgrade DTSTART;VALUE=DATE-TIME:20120903T060000Z DTEND;VALUE=DATE-TIME:20120903T062000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-81@cern.ch DESCRIPTION:Speakers: CARVALHO AKIBA\, Kazuyoshi (Nikhef)\nThe LHCb VELO ( silicon Vertex Locator) will be upgraded in 2018\, as part of the general upgrade of the LHCb experiment\, which will transform the entire detector readout to a triggerless system operating at 40 MHz. The current L0 hardw are trigger will be removed\, and all data reduction algorithms will be ex ecuted in a high level software farm\, with access to all event informatio n. This will enable the detector to run at luminosities of above 2x10^33 cm-2s-1 and explore New Physics effects in the beauty and charm sector wi th unprecedented precision. The new vertex detector will have to cope wi th radiation levels of up to 10^16 1 MeV neutron equivalents / cm^2\, more than an order of magnitude higher than those expected at the current expe riment. At the same time\, the sensors must approach the beam as closely as possible (7mm or below) without introducing dead material\, hence the d esign of the sensor guard ring is crucial. New sensor designs have been launched for the 55 x 55 micron square pixel technology options with a num ber of manufacturers\, and are being prototyped in lab and testbeam measur ements. The lightweight radiation-hard assembly will integrate evaporati ve CO2 cooling for which microchannel cooling is being considered as an al ternative to diamond or TPG heat spreading planes. Technological challe nges include the module design\, the construction of a lightweight foil to separate the primary and secondary LHC vacuua\, the use of high speed cab les\, and the metallisation and radiation qualification of the module. In order to cope with the huge data flow special techniques will be applied\ , with the major areas of R&D focussing on techniques for data compression in the chips\, time ordering in the FPGAs\, and the use of GPUs for patte rn recognition and tracking. The current status of the LHCb VELO upgrade developments will be described\, and the latest results from the mechanica l prototyping and sensor tests in the testbeams will be shown.\n\nhttp://i ndico.cern.ch/contributionDisplay.py?contribId=81&sessionId=3&confId=13733 7 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=81&sessionId=3& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Closing remarks DTSTART;VALUE=DATE-TIME:20120907T023000Z DTEND;VALUE=DATE-TIME:20120907T030000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-119@cern.ch DESCRIPTION:Speakers: SCHMITT\, Bernd (Paul Scherrer Institut)\nhttp://ind ico.cern.ch/contributionDisplay.py?contribId=119&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan Ballroom "Tenkyo"-Ea st URL:http://indico.cern.ch/contributionDisplay.py?contribId=119&confId=1373 37 END:VEVENT BEGIN:VEVENT SUMMARY:Opening address DTSTART;VALUE=DATE-TIME:20120902T234500Z DTEND;VALUE=DATE-TIME:20120903T000000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-118@cern.ch DESCRIPTION:Speakers: UNNO\, Yoshinobu (High Energy Accelerator Research O rganization (JP))\nhttp://indico.cern.ch/contributionDisplay.py?contribId= 118&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=118&confId=1373 37 END:VEVENT BEGIN:VEVENT SUMMARY:Frontend Electronics development for the CMS pixel detector upgrad e DTSTART;VALUE=DATE-TIME:20120905T000000Z DTEND;VALUE=DATE-TIME:20120905T002000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-84@cern.ch DESCRIPTION:Speakers: Dr. KAESTLI\, Hans-Christian (Paul Scherrer Institut (CH))\nThe performance of the LHC accelerator at CERN has been outstandin g since its startup in 2010. It seems likely that the delivered instantene ous luminosity exceeds its design value of $10^{34}$ cm$^{-2} s$^{-1}$ soo n after the recommissioning in 2014. Tracking in such a dense environment is challenging. This is especially true for the main tasks of the pixel de tector such as b-tagging. In order to compensate for the expected decrease in performance due to the high number of simultaneous interactions\, an u pgrade of the pixel detector has been proposed. The innermost barrel layer moves closer to the interaction region and a forth barrel layer and a thi rd endcap disk on each side have been added.\\\\\nIn order to cope with th is substantial increase of data rates\, an improved version of the front e nd electronics is needed. The new CMS pixel readout chip (ROC) is develope d in two steps\, based on the present ROC. In a first step\, several measu res have been taken to lower the inefficienies inside the ROC and to impro ve analog performance. The output data format has been changed to a digita l scheme to increase data throughput. In a second step\, the core of the s o called Column Drain architecture needs substantial modifications to cope with the data rates expected in the innermost barrel layer.\\\\\n\nWe wil l present the overall concept of the front end electronics development and show results from measurements of the first step prototype chip.\n\nhttp: //indico.cern.ch/contributionDisplay.py?contribId=84&sessionId=6&confId=13 7337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=84&sessionId=6& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Developing a CCD camera with high spatial resolution for RIXS in t he soft X-ray range DTSTART;VALUE=DATE-TIME:20120904T000000Z DTEND;VALUE=DATE-TIME:20120904T002000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-85@cern.ch DESCRIPTION:Speakers: SOMAN\, Matthew (Open University)\nThe Super Advance d X-ray Emission Spectrometer (SAXES) at the Swiss Light Source contains a high resolution Charge Coupled Device (CCD) based camera used for Resonan t Inelastic X-ray Scattering (RIXS) [1]. Using the current CCD based camer a system\, the energy-dispersive spectrometer has an energy resolution (E/ ΔE) of approximately 12000 at 930 eV [2]. A recent study [3] predicted th at through an upgrade to the grating and camera system\, the energy resolu tion could be improved by a factor of two. In order to achieve this goal i n the spectral domain\, the spatial resolution of the CCD must be improved to better than 5 um from the current 24 um spatial resolution (FWHM) [2]. \n\nThe 400 to 1600 eV energy X-rays detected by this spectrometer primari ly interact within the field free region of the CCD\, producing electron c louds which will diffuse isotropically until they reach the depleted regio n and buried channel. This diffusion of the charge leads to events which a re split across several pixels. Through the analysis of the charge distrib ution across the pixels\, various centroiding techniques can be used to pi npoint the spatial location of the X-ray interaction to the sub-pixel leve l\, greatly improving the spatial resolution achieved.\n\nUsing the PolLux soft X-ray microspectroscopy endstation at the Swiss Light Source\, a bea m of X-rays of energies from 200 to 1200 eV can be focused to a spot size of approximately 20 nm [4]. Scanning this spot across the 16 um square pix els allows the sub-pixel response to be investigated. Previous work has de monstrated the potential improvement in spatial resolution achievable by c entroiding events in a standard CCD [5]. An Electron Multiplying-CCD (EM-C CD) has been used to improve the signal to readout noise ratio achieved. C entre of mass centroiding algorithms have been corrected for their non-lin earity using a non-linear η algorithm [6]. Various non-linear correction algorithms have been investigated to optimise performance. The spatial res olution of an EM-CCD is demonstrated to be better than 2 um (FWHM) in a ph oton counting mode.\n\nReferences:\n [1] L.J.P. Ament et al.\, Rev. Mod. P hys.\, 83\, 705 (2011).\n [2] G. Ghiringhelli et al.\, Rev. Sci. Instrum.\ , 77\, 113108 (2006).\n [3] D.J. Hall et al.\, JINST\, 7\, C01063 (2012).\ n [4] J. Raabe et al.\, Rev. Sci. Instrum.\, 79\, 113704 (2008).\n [5] M.R . Soman et al.\, JINST\, 6\, C11021 (2011).\n [6] R. Turchetta\, Nucl. Ins tr. and Meth.\, A335\, 44 (1993).\n\nhttp://indico.cern.ch/contributionDis play.py?contribId=85&sessionId=4&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=85&sessionId=4& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Radiation-Hard High-Speed Parallel Optical Links DTSTART;VALUE=DATE-TIME:20120905T024000Z DTEND;VALUE=DATE-TIME:20120905T030000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-3@cern.ch DESCRIPTION:Speakers: Prof. GAN\, Kock Kiam (Ohio State University (US))\n We have designed two ASICs for possible applications in the optical links of a new layer of the ATLAS pixel detector for the initial phase of the LH C luminosity upgrade. The ASICs include a high-speed driver for a VCSEL an d a receiver/decoder to extract the data and clock from the signal receive d by a PIN diode. Both ASICs contain 12 channels for operation with a VCSE L or PIN array. Among these channels\, the outer four channels are design ated as spares to bypass a broken PIN or VCSEL within the inner eight chan nels. The ASICs were designed using a 130 nm CMOS process to enhance the r adiation-hardness. With the spacing of 250 μm between two VCSEL or PIN ch annels\, the width of an optical array is only 3 mm. This allows the fabri cation of compact parallel optical engine for installation at a location w here space is at a premium such as that close to a pixel detector. The fab ricated receiver/decoder properly decodes the bi-phase marked input stream with no bit error at low PIN current. The performance of the VCSEL driver at 5 Gb/s is satisfactory. We are able to program the ASICs to bypass a b roken PIN or VCSEL and the power-on reset circuits have been successfully implemented to set the ASICs to a default configuration in an event of com munication failure. We have irradiated the receiver/decoder to high dose a nd observe no significant degradation and the SEU rate is low. We plan to irradiate the VCSEL drivers in the summer to measure the radiation hardnes s. We will present results from the study at the conference. In addition\, we will present the design of a new VCSEL driver ASIC to operate at 10 Gb /s which will yield an aggregated bandwidth of 120 Gb/s for a fiber ribbon .\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=3&sessionId=6& confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=3&sessionId=6&c onfId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:3D Integration for SOI Pixel Detector DTSTART;VALUE=DATE-TIME:20120904T060000Z DTEND;VALUE=DATE-TIME:20120904T062000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-7@cern.ch DESCRIPTION:Speakers: MOTOYOSHI\, Makoto (Tohoku-MincroTec Co.\, Ltd (T-Mi cro))\nAbstract\nLarge-scale integration (LSI) technology in two dimension s has been the norm over the past three decades. However\, the industry i s now rapidly moving into the era of sub-20-nm nodes\, and continuation of the present scaling trend will require the introduction of new transistor s with three-dimensional (3D) structures and new materials and processes. This is expected to dramatically increase the development and manufacturi ng costs for systems-on-a-chip. 3D-LSI is one solution that can mitigate cost increases without degrading device performance. Consequently\, many methods to realize 3D-LSI devices have been developed by focusing on the u nit processes of 3D-LSI technology: (1) through-silicon via (TSV) formatio n\, (2) bump formation\, (3) wafer thinning\, (4) chip/wafer alignment\, a nd (5) chip/wafer bonding. However\, these unit processes are incompatibl e in terms of various device and process requirements such as process temp erature\, device structure\, TSV and bump dimensions\, yield\, reliability \, and supply chain. For example\, the simplest 3D pixel detectors are tw o-tile face-to-face stacking devices with fine-pitch μ-bump bonding\, whi ch requires bump formation\, wafer thinning\, accurate chip/wafer alignmen t\, and chip/wafer stacking. For bump connection\, several reported metho ds are available\, such as Cu–Cu bonding\, intermetallic-compound bondin g with Cu/Sn bumps\, and Au bump bonding. Cu–Cu direct bonding can prov ide a good and robust connection\, but needs completely clean and flat sur faces. This would necessitate a dust-free environment\, which is difficul t to realize in practice for wafer/chip stacking with bump bonding. There fore\, although theoretically there might be many combinations of these fi ve unit processes\, the combinations do not a device structure with good y ield\, reliability\, and cost. This study investigated the optimal combin ation of unit processes for manufacturing the SOI stacked pixel detector c hip that has been designed by KEK. Stacking was accomplished with 2.5 μm × 2.5 μm In bump connections and adhesive injection at low temperature (less than 200°C). It was found that the stacking process is affected by the layout of each tier\, that adhesive injection is the key technology\, and that these effects could be minimized by optimizing the layout\, proc ess parameters\, and device structure. Another concern in manufacturing t he pixel detector is suppressing metal contamination. Some metals such as Au\, Fe\, and Pt form intermediate energy level between the conduction an d valence bands of Si and act as life-time killer. Cu is used as a wiring material and bump material in 3D devices. However\, Cu diffuses into Si crystals and SiO2 even at room temperature\, increasing the leak current o f pn junctions and deteriorating the oxide quality of MOS transistors. In our 3D integration using In bumps\, Au is used to protect In from oxidati on. Hence\, optimizing the UBM (under bump metallization) layer is import ant. Therefore\, we also studied the device characteristics with differen t UBM materials.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId =7&sessionId=5&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=7&sessionId=5&c onfId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Robust in hardware mapping of hot pixels and hot pixel data recons truction DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-108@cern.ch DESCRIPTION:Speakers: DELLEY\, Bernard (Paul Scherrer Institut)\nWhile ori ginally aimed at imaging applications\, robust in hardware mapping of hot pixels and hot pixel data reconstruction may also provide a starting point for algorithmic cluster reduction in future detector system. The method a ddresses issues with radiation defects and mitigation of radiation effects while establishing the hot pixel map or list.\n\nhttp://indico.cern.ch/co ntributionDisplay.py?contribId=108&sessionId=14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=108&sessionId=1 4&confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Pixel detector developments for synchrotron radiation DTSTART;VALUE=DATE-TIME:20120903T075000Z DTEND;VALUE=DATE-TIME:20120903T082000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-109@cern.ch DESCRIPTION:Speakers: SCHMITT\, Bernd (P)\nCurrently there are many intere sting developments going on in the area of pixel detectors for synchrotron s and XFELs. Many developments done for XFELs also open new measurement ca pabilities at synchrotrons and overcome limitations of single photon count ing detectors. In the presentation I will give an overview of the current developments with a focus on hybrid detector systems.\n\nhttp://indico.cer n.ch/contributionDisplay.py?contribId=109&sessionId=3&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=109&sessionId=3 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Monolithic pixel detectors DTSTART;VALUE=DATE-TIME:20120905T233000Z DTEND;VALUE=DATE-TIME:20120906T000000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-102@cern.ch DESCRIPTION:Speakers: SNOEYS\, Walter (CERN)\nMonolithic detectors integra te sensor and readout in one piece of silicon and therefore present advant ages compared with hybrid detectors in terms of detector assembly\, produc tion cost and detector capacitance. Despite years of intensive research th ey have not yet been widely adopted for high energy physics. Several funct ional devices on high resistivity silicon have been developed but often re quire fabrication steps incompatible with high volume manufacturing in sta ndard semiconductor foundries. Recently devices have been manufactured in more standard CMOS technologies\, with several improvements\, but preservi ng the low capacitance and efficiency over the full surface for more compl ex readout circuitry has remained a challenge.\nAn overview will be presen ted of different approaches to realize monolithic detectors\, including de velopments using monolithic active pixel sensors (MAPS)\, deep well implan ts\, silicon on insulator (SOI) and high resistivity substrates. Their per formance in terms of particle detection and radiation tolerance will be di scussed as well as power consumption which is a key parameter. An effort will be made to point out the challenges that need to be overcome for mono lithic detectors to be adopted more widely in high energy physics.\n\nhttp ://indico.cern.ch/contributionDisplay.py?contribId=102&sessionId=7&confId= 137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=102&sessionId=7 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Vertex detectors for the future linear colliders DTSTART;VALUE=DATE-TIME:20120903T025000Z DTEND;VALUE=DATE-TIME:20120903T032000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-103@cern.ch DESCRIPTION:Speakers: BENOIT\, Mathieu (CERN LCD)\nThe Linear Collider’s vertex detectors present a new challenge in terms of requirements for mat erial budget (0.2% X0. 200 um of Si)\, cooling system (air cooling) and te mporal (~10 ns) and spatial resolution (3 um) [1] with regard to LHC and I LC experiments. The hybrid planar pixel sensor technology\, due to its ro bustness\, low noise and fast timing properties\, is currently studied usi ng TCAD\, GEANT4 and experimental measurements to determine its viability as the main building block of CLIC vertex detectors. We present plans for production of ultra-thin hybrid sensor devices and fine pitch fast readout electronics (SmallPix\, CLICPix)\, using Through-Silicon-Via (TSV)\, to b e used for test beam analysis of their characteristics. First results on p ower pulsing of Timepix type pixel sensors [2] using the Timepix Telescope in CERN SPS test beam campaign will be presented. Comparison and validati on of a TCAD driven GEANT4 [3] digitization methods with test beam data to be used in full detector simulation of CLIC vertex detectors is also be d iscussed.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=103&se ssionId=2&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=103&sessionId=2 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Design and characterisation of a Highly Miniaturised Radiation Mon itor DTSTART;VALUE=DATE-TIME:20120906T020000Z DTEND;VALUE=DATE-TIME:20120906T022000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-100@cern.ch DESCRIPTION:Speakers: GUERRINI\, Nicola Carlo (STFC - RAL)\nReliable data on the ionising radiation environment are regarded as very important to en sure an efficient design and operation of spacecraft. Engineering such sen sors\, and their cost\, anyway\, still represents a limitation to their wi despread adoption. Here we present a Highly Miniaturised Radiation Monitor (HMRM)\, developed by the Science and Technology Facilities Council and I mperial College London within the framework of a European Space Agency tec hnology development contract. Its aim is to greatly reducing costs and com plexity of radiation detectors. \nAt the core of the current design is a C MOS Image Sensor. Size and mass are considerably reduced thanks to this ap proach and there is also scope for a reduction in power consumption. This makes the HMRM much easier to integrate on a spacecraft. \nThe image senso r is based on a 50 by 51 pixel array. The selected pixel is a 4T\, to redu ce the noise. The array is readout in snapshot mode at a frame-rate of 10\ ,000 fps. \nBiasing currents and voltages are generated on-chip to reduce the number of signals required to control the sensor. The sensor is design ed to work on a large range of temperatures\, from -40.C to +80?C\, hence a temperature sensor has been integrated. \nThe digital output data are ob tained with a three bits column parallel ADC with programmable thresholds. An analogue readout has been also designed to characterise and debug the ASIC. \nIn this following paper we want to present also the results obtai ned from the measurements on the prototype. Preliminary PTC plots show a g ain of 60uV/e- with CDS and a noise of 16e- rms\, which include the noise from the external board. \nThe sensor was manufactured on standard (low) and high resistivity epitaxial substrates\, the former being the baseline for the technology and the latter the one which will be used in the instr ument. The high-resistivity allows the charge to be collected by drift and not diffusion\, thus reducing the overall cross-talk. In both substrates\ , the epitaxial layer is 12 um thick.\n\nhttp://indico.cern.ch/contributio nDisplay.py?contribId=100&sessionId=7&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=100&sessionId=7 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Design and Fabrication of Endoscope-Type Compton Camera DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-101@cern.ch DESCRIPTION:Speakers: NAKAMURA\, Yasuaki (Univ. of Tokyo)\nWe are construc ting an endoscope coupled with radiation detector\, and its real time radi ation imaging system. The imaging system is based on Compton camera compos ed of a digital signal-processing unit with ASIC and FPGA and reconstructi on algorithm using spherical harmonics that can compute in real time. Acqu ired data are immediately transferred to a host PC and computed by a recon struction algorithm\, and reconstructed image is displayed one after anoth er. In this paper\, we show some simulation results on the performance of the system using EGS5\, Monte Carlo simulation code. We have also fabricat ed a prototype Compton camera using two array-type semiconductor detectors \, a Si array and a CdTe array\, whose sizes are less than 10mm x 10mm.\n\ nhttp://indico.cern.ch/contributionDisplay.py?contribId=101&sessionId=15&c onfId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=101&sessionId=1 5&confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Achievement\, Issues\, and next steps of CMOS image sensors DTSTART;VALUE=DATE-TIME:20120904T043000Z DTEND;VALUE=DATE-TIME:20120904T050000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-106@cern.ch DESCRIPTION:Speakers: SUGAWA\, Shigetoshi (Tohoku University)\nCMOS image sensors have been widely applied to various fields in this decade by the g reat improvements of basic performances such as sensitivity\, noise and re solution. Recent CMOS image sensors have achieved the pixel pitch of about 1μm\, the number of pixels of 40 million or more and the input conversio n noise of about 1 electron. CMOS image sensor has come to exceed CCD imag e sensor greatly in the shipment amount. In this paper\, the achievement t echnologies\, current issues and next steps for high sensitivity\, low noi se\, wide dynamic range and high speed in CMOS image sensors are discussed .\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=106&sessionId= 5&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=106&sessionId=5 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Accident at TEPCO’s Fukushima-Daiichi nuclear power plant - What went wrong and what lessons are universal - DTSTART;VALUE=DATE-TIME:20120903T000000Z DTEND;VALUE=DATE-TIME:20120903T003000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-104@cern.ch DESCRIPTION:Speakers: OMOTO\, akira (T)\nThe speech on the recent nuclear accident focuses on “what went wrong” and “what lessons are universa l”.\n As is well recognized in the nuclear safety regime\, prevention of radiological impact to human and environment as a consequence of nuclear reactor accident follows the basic philosophy of defense-in-depth consisti ng of five layers of defense\, of which the first three by design\, the 4t h by prevention and mitigation of beyond design basis (severe accident) co nditions\, and the 5th by offsite emergency plan.\nBreach of defense layer s was particularly significant in protection a) against natural disaster ( 1st layer of defense) as well as b) against severe conditions\, specifical ly in this case\, a complete loss of all AC/DC power and isolation from Ul timate Heat Sink (4th layer of defense). Confusion in crisis management by the Government and insufficient implementation of offsite emergency plan revealed issues such as delineation of responsibility in the 5th layer of defense.\n Deliberation of lessons learned should not stop at analysis of causal chain of events but also touch upon underlying factors such as coo perate risk management strategy\, organizational culture\, interface among operator\, regulator and society etc.\, all of which influences key decis ions on safety. This deliberation here is based on a) analysis of what led to breach of layers of defense-in-depth\, b) UT (University of Tokyo) stu dy on “why nuclear community failed to prevent this accident”\, and c) Accident Investigation Committees’ reports. Details are discussed such as a) preparedness to residual risk by assuming “what if the assumed con dition was wrong” under high uncertainties\, b) not sufficient continuou s safety improvement by learning from global good practices\, c) basic ass umptions in the most basic level of safety culture hierarchy. \n In conc lusion\, personal view on universal lessons comes to the very basics of th e use of technology\; \na) Resilience: There is a need to enhance organiza tional capability to Respond\, Monitor\, Anticipate\, Learn in varying con ditions to lead to success. As for design\, expected are reduced system in teractions\, enhanced reliability by “diversity” & “passive” in sa fety system\,\nb) Responsibility: Operator is primarily responsible for sa fety (responsible use)\, and the Government has to fulfill the responsibil ity to protect public health and environment. \nFor both\, their capabilit y is supported by competence\, knowledge and understanding of the technolo gy\,\nc) LPHC (Low Probability High Consequence) risk: Consequence matters \, rather than voicing low probability. There is a need to avoid\, as much as possible regardless its probability of occurrence\, the reasonably ant icipated environmental impact (spill\, land contamination etc.)\, and\nd) Interface with society: Importance of risk communication and communication with safety experts in other disciplines was recognized. Further\, post-F ukushima situation indicates “no production without trust from the socie ty”.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=104&sessi onId=2&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=104&sessionId=2 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Distribution of radioactive cesium measured by aerial radiation mo nitoring DTSTART;VALUE=DATE-TIME:20120903T003000Z DTEND;VALUE=DATE-TIME:20120903T010000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-105@cern.ch DESCRIPTION:Speakers: Dr. SANADA\, Yukihisa (Japan Atomic Energy Agency)\n We measured the ambient dose-rate and the deposition amount of radioactive cesium by using four helicopters in the whole area of Japan to investigat e the influence of the radioactivity that released in the atmosphere due t o the disaster of the Fukushima Daiichi NPP (Nuclear Power Plant)\, Tokyo Electric Power Company (TEPCO)\, occurred by Tohoku-Pacific Ocean Earthqua ke and tsunami on March 11\, 2011. A massive radioactive materials emitted from the NPP was released in the atmosphere due to the disaster and conta minated soils in the wide area in Japan. Therefore\, we have carried out t he airborne radiation monitoring (ARM) in the whole area of Japan\, and in vestigated the influence of the radioactive cesium of the deposition to th e ground level. It reports on the measurement technique and the result.\n\ nhttp://indico.cern.ch/contributionDisplay.py?contribId=105&sessionId=2&co nfId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=105&sessionId=2 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Development of X-ray detector using optical switching readout for high-speed imaging DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-39@cern.ch DESCRIPTION:Speakers: Dr. KIM\, Ryun Kyung (Korea Electrotechnology Resear ch Institute (KERI))\nWe demonstrate an x-ray detector with dual amorphous -Selenium (a-Se) layer using optical switching readout for high-speed x-ra y imaging. The x-ray detector consists of a negative voltage bias electrod e\, a thick a-Se layer for photoelectric conversion of x-ray photons\, an As2Se3 layer as an electron-trapping layer for accumulating a latent image \, a thin a-Se layer for optical readout\, an opaque-\, and transparent-el ectrodes formed alternately\, and a plasma display panel (PDP) optical sou rce for optical switching readout. The readout PDP source with peak wavele ngth of blue 470nm was operated to line by line with electrical scanning f or high-speed x-ray imaging. The developed x-ray detector has 512 x 512 wi th 200um pixel.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId= 39&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=39&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Design of the AGIPD Sensor for the European XFEL DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-38@cern.ch DESCRIPTION:Speakers: POEHLSEN\, Thomas (University of Hamburg)\nFor exper iments at the European X-Ray Free-Electron Laser (XFEL)\, an Adaptive Gain Integrating Pixel Detector (AGIPD) system is under development. The parti cular requirements for the detector are a high dynamic range of 0\, 1 - to more than 1E4 \n12.4 keV photons per pixel within a XFEL pulse duration o f \n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=38&sessionId= 14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=38&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Development of Data-Acquisition Front Ends enabling High-bandwidth Data Handling for X-ray 2D Detectors: A Feasibility Study DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-32@cern.ch DESCRIPTION:Speakers: SAJI\, Choji (JASRI/SPring-8)\nX-ray 2D detectors ar e indispensable for synchrotron radiation and X-ray free-electron laser ex periments such as coherent x-ray imaging\, spectroscopies\, time-resolved experiments etc. In these experiments\, spatial\, temporal\, or photon ene rgy information are projected onto X-ray 2D detector surface. It is genera lly accepted that larger pixel number and higher dynamic range will provid e clearer information on the sample. These demand high-bandwidth front end s (FEs) for data acquisition (DAQ) system. In the case of SOPHIAS sensor u nder development at SACLA (SPring-8 Angstrom Compact free electron LAser)\ , each sensor in the final form will have 2 M pixels running at up to 300 Hz\, and produces data at upto 20 Gbps. In order to realize the front ends for SOPHIAS as well as other high-bandwidth detectors\, a feasibility stu dy has been carried out by using an evaluation board. The board has FPGA w ith FMC (FPGA mezzanine card) interface in order to support various physic al layers of sensor readout modules and DAQ back ends (BEs). In this study \, the bandwidth from FPGA to BEs were evaluated for XAUI with SFP+ (Small Form-factor Pluggable plus) physical layer. One of the advantages of XAUI is that it interfaces MAC (Media Access Control) to PHY layer of 10 Gigab it Ethernet (GbE) enabling distributed DAQ system with 10 GbE network. I n many photon science applications\, scalability from single to many modul es is of importance. As a candidate for FEs for small detector system\, a compact desktop-type DAQ system based on PCI express bus was evaluated. A FE board with PCI express will be connected to PC\, and the data will be t ransferred to PC storage directly. Measurements of the bandwidth by using the evaluation board indicated successful effective bandwidth of 9 Gbps an d 16 Gbps though SFP+ with XAUI and PCI express\, respectively. Details of the evaluation scheme will be discussed in the presentation. And our deve loping sensor connection device\, Camera Link FMC\, will be reported.\n\nh ttp://indico.cern.ch/contributionDisplay.py?contribId=32&sessionId=14&conf Id=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=32&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:A thin fully-depleted monolithic pixel sensor in Silicon On Insula tor technology DTSTART;VALUE=DATE-TIME:20120904T052000Z DTEND;VALUE=DATE-TIME:20120904T054000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-31@cern.ch DESCRIPTION:Speakers: MATTIAZZO\, Serena (Università e INFN Padova (IT))\ nThe Silicon On Insulator (SOI) technology allows the integration of CMOS electronics on a thin silicon layer which is electrically insulated from t he wafer substrate by means of a thin buried-oxide layer (BOX). Monolithic pixel sensors can be built in SOI technology by contacting a high-resisti vity handle wafer substrate through the BOX. A commercial deep-submicron S OI CMOS process by LAPIS\, coupled with high-resistivity silicon substrate s\, is made available through KEK. A full CMOS circuitry can be integrated in a 40nm thick layer on top of each pixel\, and the 250um thick substrat e can be reverse biased and depleted to improve charge collection. In the framework of an international collaboration between the Lawrence Berkeley National Laboratory (LBNL)\, INFN and UC Santa Cruz\, since 2006 we have d esigned\, produced and characterized different prototypes of monolithic pi xel detectors in SOI technology\, both for charged particle detection and for imaging applications. SOI monolithic pixel detectors can provide high resolution vertex tracking with a limited material budget (if compared to hybrid pixels) for future experiments in which the radiation levels are mo derate (SuperKEKB\, SuperB b-factories).\nIn this contribution we will re view the latest chip produced\, a matrix of 256×256 analog pixels in a 0. 20um SOI technology\, arrayed in 8 different sectors\, thinned to 50um and back-processed to allow full depletion. The chip has been successfully te sted with soft X-ray photons in back-illumination at the Advanced Light So urce (ALS) of LBNL and with 300GeV pion- at the CERN SPS. These results sh ow that a thin fully-depleted SOI pixel provides charged particle detectio n capability with large signal-to-noise ratio and detection efficiency and achieves a single point resolution of the order of 1um. \nThe design of a new\, larger chip has been submitted at the end of 2011 and will be test ed with high momentum particles at a beam test at CERN scheduled for July 2012. Results of this work will be shown as well.\n\nhttp://indico.cern.ch /contributionDisplay.py?contribId=31&sessionId=5&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=31&sessionId=5& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Recent Results of the ATLAS Upgrade Planar Pixel Sensors R&D Proje ct* DTSTART;VALUE=DATE-TIME:20120906T055000Z DTEND;VALUE=DATE-TIME:20120906T061000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-30@cern.ch DESCRIPTION:Speakers: WEIGELL\, Philipp (Max-Planck-Institut fuer Physik ( Werner-Heisenberg-Institut) (D)\nTo extend the physics reach of the LHC ex periments\, several upgrades to the accelerator complex are planned. This upgrade\, the HL-LHC\, eventually leads to an increase of the peak luminos ity by a factor of five to ten compared to the LHC design value.\n\nTo cop e with the higher occupancy and radiation damage also the LHC experiments will be upgraded. The ATLAS Planar Pixel Sensor (PPS) R&D Project is an in ternational collaboration of 17 institutions and more than 80 scientists\, exploring the feasibility of employing planar pixel sensors for the upgra ded tracker at HL-LHC.\n\nDepending on the radius different pixel concepts are investigated using laboratory and beam test measurements. At small ra dii the extreme radiation environment and strong space constraints are add ressed with very thin pixel sensors (active thickness in the range of 75-1 50 µm)\, and the development of slim as well as active edges. At larger r adii the main challenge is the needed cost reduction to allow for instrume nting the large area of order 10 m². To reach this goal the pixel product ions will be transferred to 6 inch production lines. Additionally\, more c ost-efficient and industrialized interconnection techniques as well as the n-in-p technology\, which as a single-sided process requires less product ion steps\, are investigated.\n\nAn overview of the recent accomplishments obtained within the PPS R&D project will be given. The performance in ter ms of charge collection and tracking efficiency\, obtained with radioactiv e sources in the laboratory and at beam tests\, will be presented for devi ces built from sensors of different vendors connected to either the presen t ATLAS read-out chip FE-I3 or the new IBL read-out chip FE-I4. The device s\, with a thickness varying between 75 µm and 300\nµm\, have been irrad iated to several fluences up to 20x10**15 neq/cm². Finally\, the differen t approaches followed inside the collaboration to achieve slim or active e dges for planar pixel sensors will be presented.\n\nhttp://indico.cern.ch/ contributionDisplay.py?contribId=30&sessionId=8&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=30&sessionId=8& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Comparison of myocardial perfusion imaging between new ultrafast C ZT camera and conventional SPECT: anthropomorphic phantom study DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-37@cern.ch DESCRIPTION:Speakers: Prof. WU\, Tung-Hsin (Department of Biomedical Imagi ng and Radiological Sciences\, National Yang Ming University)\nPurpose: Th e solid-state detector is the novel γ-camera to reduce patient’s imagin g time and radiation dosage in nuclear cardiology. However\, there was a d iscrepancy of optimal acquisition protocol between Thallium-201 and Tc-99m radionuclide in many literatures. The aim of this study was to compare ne w ultrafast cadmium-zinc-telluride (CZT) camera with conventional SPECT us ing anthropomorphic torso phantom to establish the optimal protocol for my ocardial perfusion imaging (MPI).\nMaterials and Methods: Anthropomorphic torso phantom was filled with Thallium-201: 0.72 μCi/mL for cardiac inser t\; 0.515 μCi/mL for the liver\; 0.06 μCi/mL for background as the stres s state\; and with 0.576μCi/mL for cardiac insert\; 0.412 μCi/mL for the liver\; 0.048 μCi/mL for background as the rest state. Similarly\, phant om was filled with Tc-99m: 1.56 μCi/mL for the cardiac insert\; 1.04 μCi /mL for the liver\; 0.13 μCi/mL for background as the stress state\; and with 3.04 μCi/mL for the cardiac insert\, 1.52 μCi/mL for the liver\, an d 0.34 μCi/mL for background as the rest state. All images were acquired by conventional dual-detector SPECT (e.cam\; Siemens) with 15 min. Phantom immediately repeated on an ultrafast CZT camera over a 10-min acquisition time and reconstructed from list-mode raw data to obtain scan durations o f 1 min\, 2 min\, etc.\, up to a maximum of 10 min. Quantitative analysis was performed on MPI polar maps with conventional SPECT MPI images and 1 t o 10 min of CZT detector camera using a 20-segment model for the left vent ricle. Intra-class correlation (ICC) was used to compare segmental tracer uptake between conventional SPECT and ultrafast CZT camera. Bland–Altman limits of agreement were calculated per segment for these durations.\nRes ults: Minimal required scan times were 4 min for Thallium-201 both stress and rest (r=0.82\; P \n\nhttp://indico.cern.ch/contributionDisplay.py?cont ribId=37&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=37&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Optimization of the scan protocol for small-animal PET imaging: Ef fects on image quality\, quantification accuracy\, and radiation exposure DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-36@cern.ch DESCRIPTION:Speakers: Prof. WU\, Tung-Hsin (Department of Biomedical Imagi ng and Radiological Sciences\, National Yang Ming University)\nPurpose: Po sitron emission tomography (PET) imaging performance is limited by a numbe r of physical\, acquisition\, and dosimetric constraints. To gain a thorou gh understanding of this issue\, multivariate analysis was used to investi gate the simultaneous effects of changes in these factors. This study inve stigated the relationship among the small animal imaging protocol\, imagin g performance\, and radiation dose to achieve optimal PET image quality an d minimize potential damage caused by radiation and anesthesia in preclini cal studies.\nMethods: A small-animal PET system with a dual-layer phoswic h detector was modeled based on a Monte Carlo simulation to generate the e mission image and dose distribution. A multivariate approach was used to i nvestigate the simultaneous effects of tumor size\, target-to-background r atio (TBR)\, scan duration\, and injected radioactivity on the contrast-to -noise ratio (CNR) and recovery coefficient (RC). \nResults: The object si ze\, TBR\, injected activity\, and scan time were crucial predictors\, whe reas TBR and scan time were the most relevant contributors of CNR and RC v ariations\, respectively. In 1.86×10⁵ Bq/ml injected activity\, the abs orbed dose for a body and tumor with TBR of 2 were 2.46 and 5.39 cGy\, res pectively. A substantial improvement in CNR or RC was not observed in imag es acquired with radiotracer activity larger than 9.3×10⁴ Bq/ml and sca n duration longer than 30 min. The coefficient of determination was greate r than 0.93 for both regression models\, indicating an excellent fit to th e data.\nConclusions: Although the improvement of counting statistics by i ncreasing scan duration and injected activity can reduce statistical noise and improve spatial resolution\, it is crucial to maintain the radiation exposure and anesthetic dose received by animals as low as possible to red uce biological damage. The results of this study provide a practical guide to determining the radiotracer concentration and scan duration to detect and quantify focal lesions in small-animal PET imaging.\n\nKeywords: PET\; small animal\; imaging performance\; multivariate analysis\n\nhttp://indi co.cern.ch/contributionDisplay.py?contribId=36&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=36&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:ATLAS Silicon Microstrip Tracker Operation and Performance DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-35@cern.ch DESCRIPTION:Speakers: NAGAI\, Koichi (University of Tsukuba (JP))\nThe Sem i-Conductor Tracker (SCT) is a silicon strip detector and one of the key p recision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC.\nThe SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed\, constructed and tes ted to operate as a stand-alone unit\, mechanically\, electrically\, optic ally and thermally. The modules are mounted into two types of structures: one barrel (4 cylinders) and two end-cap systems (9 disks on each end of t he barrel).\nThe SCT silicon micro-strip sensors are processed in the plan ar p-in-n technology. The signals from the strips are processed in the fro nt-end ASICS ABCD3TA\, working in the binary readout mode. Data is transfe rred to the off-detector readout electronics via optical fibers. \nThe com pleted SCT has been installed inside the ATLAS experimental cavern since 2 007 and has been operational since then. Calibration data has been taken r egularly and analyzed to determine the noise performance of the system. Ex tensive commissioning with cosmic ray events has been performed both with and without magnetic field. The sensor behavior in the 2 Tesla solenoid ma gnetic field was studied by measurements of the Lorentz angle. We find 99. 3% of the SCT modules are operational\, noise occupancy and hit efficiency exceed the design specifications\; the alignment is very close to the ide al to allow on-line track reconstruction and invariant mass determination. \nIn the talk the current results from the successful operation of the SCT Detector at the LHC and its status after three years of operation will be presented.\nWe will report on the operation of the detector including an overview of the issues we encountered and the observation of significant increases in leakage currents (as expected) from bulk damage due to non-i onising radiation. The main emphasis will be given to the tracking perform ance of the SCT and the data quality during the many months of data taking (the LHC delivered 47pb-1 in 2010 and 5.6fb-1 in 2011 of proton-proton co llision data at 7 TeV\, and two times one-month periods of heavy ion colli sions). The SCT has been fully operational throughout all data taking peri ods. It delivered high quality tracking data for 99.9% (2010) and 99.6% ( 2011) of the delivered luminosity.\nThe SCT running experience will then b e used to extract valuable lessons for future silicon strip detector proje cts.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=35&sessionI d=14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=35&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Evaluation of novel n$^{+}$-in-p pixel and strip sensors for very high radiation environment DTSTART;VALUE=DATE-TIME:20120906T071000Z DTEND;VALUE=DATE-TIME:20120906T073000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-34@cern.ch DESCRIPTION:Speakers: UNNO\, Yoshinobu (High Energy Accelerator Research O rganization (JP))\nWe have been developing novel n$^{+}$-in-p pixel and s trip sensors that are highly radiation-tolerant\, having a ``planar" elect rode geometry\, utilize p-type silicon wafers\, and being read out from hi ghly doped n$^{+}$ implants. Our goal of the radiation level is in the ran ge of $10^{15}$ and up to 2 $\\times$ 10$^{16}$ 1-MeV-neutron-equivalent ( n$_{\\rm eq}$)/cm$^{2}$ of the particle fluence\, approximately 30 and up to 600 Mrad of the dose in Silicon\, in the strip and the pixel sensors\, respectively\, e.g.\, in the high-luminosity large hadron collider (HL-LHC ).\n\nThe n$^{+}$-in-p silicon sensors have the following properties: the p-type silicon wafer does not change type after irradiation (no type-inver sion)\; read-out is from the junction side (n$^{+}$) in all cases\; and th e collected carrier is the electron. These properties lead to a number of benefits: the lithographic processes is only required on a single side\, w hich leads to lower production costs\; partially-depleted operation is all owed\, which is crucial after heavy irradiation in which the full-depletio n voltage becomes higher than the operation voltage\; and stronger and fas ter signals are induced by the carrier in the higher electric field in the junction side\, thus leading to less charge-trapping. \n\nFor the sensors \, the critical issues include operation at very high voltage\, e.g.\, 100 0 V\, implementation of isolation structure and bias structures\, and redu ction of material. The operation voltage up to 1000\\\,V\, is to cope with the increasing full-depletion voltage caused by radiation damage. An isol ation structure is to isolate the n$^{+}$ implants from being connected by the conductive layer of attracted electrons in the surface of silicon\, c aused by the built-in and radiation-induced positive charge-up in the inte rface of the silicon and the surface oxide. A bias structure in the case o f the pixel sensors is to provide a high voltage to all pixel implants for testing without connecting the implants to the read-out chip. These struc tures are to be designed not to introduce breakdown in leakage current\, a gainst the high electric field caused by the high operation voltage. The i nsensitive area caused by the structures are to be the minimum. The sensor s are as thin as possible in order to reduce the multiple coulomb scatteri ng to the traversing charged particles. The novel n(+)-in-p pixel sensors were made using a combinations of the bias structure of punch-through or p olysilicon resistor\, the isolation structure of p-stop or p-spray\, and t he thickness of 320 $\\mu$m or 150 $\\mu$m. The strip sensors and associat ed test structures were made of the polysilicon resistor and the p-stop is olation structures. \n\nFor the pixel modules\, the critical issues includ e the need to bump bond with lead-free bumps and prevention of high voltag e sparking. Usage of lead-free Tin-Silver (SnAg) solder bumps has became t he industry standard. We have been tuning the lead-free bump-bonding techn ique in Japan. The pixel modules\, the pixel sensors being connected to th e readout chips\, were fabricated by the established vendor in Europe and by the developing vendor in Japan. The high voltage (HV) (edge of the sens or) can\, in the case of n$^{+}$-in-p devices\, be the voltage of the back plane and the ground (GND) (read-out chip) can be as close as 20 to 30 $\\ mu$m. The HV protection has been realized with encapsulating the edges. \n \nThe strip sensors and test structures were irradiated using 70 MeV proto ns to particle fluences of 5x10^12 to 1x10^15\, and the pixel modules usin g 23 MeV protons to 5x10^15 1-MeV neq/cm^2. The non-irradiated and irradia ted pixel and strip sensors were evaluated in the laboratory measurements and by using charged particle beams. \n\nIn evaluating the performance of the irradiated sensors\, we have observed a number of effect that we would like to understand: decreased efficiency under the bias rail\, decreased potential of the p-stop implant between the n(+) strips\, decreased active area in the strip end\, and increased onset voltage in the punch-through protection structures. We discuss the common source that may have caused t he above observations.\n\nhttp://indico.cern.ch/contributionDisplay.py?con tribId=34&sessionId=8&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=34&sessionId=8& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Development of Readout System of FE-I4 Pixel Module Using SiTCP DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-60@cern.ch DESCRIPTION:Speakers: TEOH\, Jia Jian (Osaka University (JP))\nThe pixel d etector of the ATLAS will be replaced at the future upgrade of LHC to keep the performance at high luminosity operation. For the upgrade\, the senso r modules have been developed by using new front-end chips (FE-I4). Since design of the FE-I4 chip is different from the chip used for the current p ixel detector\, new DAQ system is necessary to read the sensor modules. Fo r that reason\, we have developed DAQ system by using a “SEABAS” DAQ b oard. SEABAS processes the data from the FE-I4 chips with an FPGA (User-FP GA) and transfers data to a computer via Ether-net with SiTCP. SiTCP is a technology to realize direct access and transfer of the data in the memory of User-FPGA from the PC by utilizing TCP/IP and UDP communication with a dedicated FPGA. We have developed firmware and software for SEABAS\, toge ther with readout hardware chain\, and established basic functionality for reading out the FE-I4 chips.\n\nhttp://indico.cern.ch/contributionDisplay .py?contribId=60&sessionId=14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=60&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Low mass carbon based support structures for the ATLAS pixel forwa rd disks for the HL-LHC DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-61@cern.ch DESCRIPTION:Speakers: BATES\, Richard (University of Glasgow (GB))\nFor th e proposed upgraded pixel and strip detector systems of the ATLAS experime nt on the HL-LHC near all carbon support structures are a candidate. These consist of two low-density carbon fibre reinforced polymer (CFRP) sheets (low areal weight)\, consisting of ultra-high modulus fibres\, with metall ic cooling tubes filled with refrigerant sandwiched between them. Low-dens ity carbon foam is glued around the cooling tubes to connect them thermall y and physically to the CFRP skins. The pixel modules are mounted onto the skins which provide the modules with both a thermal and a mechanical supp ort.\nMeasurements of the thermal and mechanical properties of prospective low density foams and CFRP sheets are presented. Foams from two suppliers are investigated. Their different physical properties are discussed and t he impact on their thermal and mechanical properties shown. The interfaces between the foam and the CFRP skin and the foam and cooling pipe are cruc ial for the performance of the structure. The thermal resistance of these interfaces are measured. Due to the difference in the coefficient of therm al expansion of the metallic cooling pipe and the CFRP skins the foam and interfaces will undergo a shear force. The effects of the shear force on t he thermal conductivity of the interfaces and the foam are presented.\nTo minimize the material used in the supporting structure the design must be optimized based on the modulli of the material under the relevant low forc es experienced by the structure. To this end the modulii under tension\, c ompression and shear are measured for the foam and under tension for the C FRP skins. A custom made jig was used to remove twist in the sample to all ow the modulus under tension at the very low stresses of interest to be me asured.\nThe material characteristics extracted are used as input values t o finite element analysis (FEA) models of proposed designs of the forward disks of the ATLAS HL-LHC upgrade. FEA simulation results are compared to measurements made on mechanical test structures. From these results extrap olation to a proposed design for the disks are presented. The disks therma l performance is shown from the perspective of maintaining the pixel senso r temperature from thermal run away and as robustness against variation in coolant temperature.\n\nhttp://indico.cern.ch/contributionDisplay.py?cont ribId=61&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=61&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Test of TRAPPISTe Monolithic Detector System DTSTART;VALUE=DATE-TIME:20120906T010000Z DTEND;VALUE=DATE-TIME:20120906T012000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-62@cern.ch DESCRIPTION:Speakers: SOUNG YEE\, Lawrence (Universite catholique de Louva in)\nThe use of different semiconductor technologies in the field of parti cle detector has been always limited by the effects of radiation in both t he sensors and the processing circuitry. This fact has encouraged the team s working in future developments to evaluate the use of different technolo gical approaches to minimize the impact of radiation by using new detector material\, connections and read-out architectures. \n\nA monolithic Activ e Pixel sensor for charged particle tracking has been developed. This sen sor is within the frame of an R&D project called TRAPPISTe (Tracking Parti cles for Physics Instrumentation in SOI Technology)\, with the aim of stud ying the feasibility of developing a Monolithic Active Pixel Sensor (MAPS) with Silicon-on-Insulator (SOI) technology. Two different architectures a re being evaluated\, 3-transistor (3T) and charge sensitive amplifier (CSA ). To compare the results\, two chips have been fabricated: TRAPPISTe-1 an d TRAPPISTe-2. The first prototype TRAPPISTe-1 was produced at the WINFAB facility at the Universite catholique de Louvain (UCL) in Belgium in a 2 μm fully depleted (FD-SOI) CMOS process. TRAPPISTe-2 is the second proto type in this series and was fabricated with the OKI 0.20µm FD-SOI CMOS pr ocess. Each one of the prototypes analyzed implements two different approa ches\, 3-transistor read-out and charge sensitive amplifier. \n\nThe TRAPP ISTe-1 prototype is an 8x8 pixel matrix with a shift register used to cont rol signal readout. Each pixel contains simple 3-transistor readout and ha s dimensions 300μm x 300μm. An additional layout of charge sensitive amp lifiers was implemented separately in order to validate the architecture i n SOI\, although no connection with the detector was included. The second phase of this project was developed with the TRAPPISTe-2 prototype. This v ersion included similar readout architectures for evaluation and several t est transistors\, although the size of the pixel cells is 150μm x 150μm. \n \nThe TRAPPISTe chips have been measured using a custom built PCB to pr ovide the necessary bias and control signals. The test system is controlle d by an Altera DE2 FPGA and data is collected on a PC via an Ethernet conn ection. \n\nThe charge sensitive amplifiers were implemented in both WINFA B and OKI technologies. The amplifiers were based on a standard folded ca scade core with a feedback capacitor. DC measurements of the amplifiers ag ree with simulations and the effect of varying the back voltage can be cle arly observed. Different effects have been measured\, such as the influenc e of the bias current and the effect of varying the feedback transistor ga te voltage. Transient output measurements were performed by injecting a v oltage pulse onto a test input capacitor and changing the amplifier bias c urrents and voltages. The 3-transistor read-out architecture was also impl emented in both WINFAB and OKI technologies. The architecture is based on a simple structure where an external shift register is responsible for tra nsferring the charge information. This structure has been used to characte rize the whole matrix electrically.\n\nA laser system named LARA (Laser fo r Radiation Analysis) has been developed to characterize silicon sensors. LARA contains a remote controlled 3-axis motorized stage that can positio n a test device under a laser beam. An infrared laser at 1060nm wavelengt h and a red laser at 670nm wavelength are available. The system is contro lled by a PC via a LabVIEW interface. The laser measurements are being tes ted on both the 3T and the CSA architectures.\n\nhttp://indico.cern.ch/con tributionDisplay.py?contribId=62&sessionId=7&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=62&sessionId=7& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Characterization of SOI Monolithic Detector System DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-63@cern.ch DESCRIPTION:Speakers: ALVAREZ RENGIFO\, Paula Liliana (Universitat Autòno ma de Barcelona)\nThe use of different semiconductor technologies in the f ield of particle detector has been always limited by the effects of radiat ion in both the sensors and the processing circuitry. Large numbers of res earch teams are evaluating the use of different technological approaches t o minimize the impact of radiation in new developments by using new detect or material\, connections and read-out architectures. Although most pixel detectors that are in operation are hybrid active pixel sensors\, they pre sent clear limitations for particle physics applications. These problems h ave led to increased efforts related to monolithic solutions\, where the s ensor\, amplification and logic circuitry are found in the same Si-wafer. One of the possible technology solutions is SOI technology\, which is the one that has been studied in this project.\n\nSilicon-on-Insulator CMOS te chnology has been widely used for high gain and low power consumption circ uitry\, but now\, some research groups are studying its use for developing monolithic radiation detectors. This is done by producing an opening and implantation below the thin oxide that connects the top active circuitry a nd the handle wafer. The use of this technology for particle radiation det ectors is subject to the back gate effect because of the voltage applied t o deplete the detector. Since the area under the transistor acts as a back gate\, its potential affects the threshold voltage and the leakage curren t of the transistor. The back gate effect depends on many factors\, such a s the thickness of the bulk substrate\, the voltage applied for detection and the guard ring patterns that can be introduced below the oxide to impr ove signal acquisition. To minimize this effect\, different approaches can be made\, from increasing the oxide thickness to include different well i mplantations below the read-out circuitry. One of the main goals of the TR APPISTe (Tracking Particles for Physics Instrumentation in SOI Technology) project is to analyze these effects and study how to minimize them. In th is study/project\, two different technologies are used and different read- out approaches are evaluated. Initially a first prototype (TRAPPISTe-1) w as developed at the Université catholique de Louvain (UCL) in Belgium at the WINFAB facility in Louvain-la-Neuve. WINFAB provided a 2μm FD-SOI CMO S process with one metal layer. For this prototype\, a p-type wafer with a resistivity about 25Ωcm was used. A second prototype\, Trappiste-2\, was fabricated with a 0.20µm FD-SOI CMOS technology\, provided by OKI Semico nductors through the SOIPIX collaboration. The OKI process provides five m etal layers and high resistivity n-type substrates of 700Ωcm and 10kΩcm. Both prototypes have been used to study the problem of back gate effect. The interest of using WINFAB technology is because it provides a thicker o xide layer. The second technology\, the OKI technology\, provides a method to mitigate the back gate effect with a buried P-well (BPW). The first re sults that will be presented are based on measurements of the test structu res performed at different back voltages. \n\nThe first steps were used to validate our methodology and tried to characterize the transistors used a t different Back Gate. The transistor test area contains single transistor s whose gate\, source and drain inputs are connected to test pads. It cont ains seven columns of transistors representing the source tied transistors provided by the OKI process. All of the transistors have a W/L of 10µ/2 µ except for the I/O n-type Depleted MOS (DMOS) transistors which are siz e 2µ/10µ. The parameters such as threshold voltage (VTH)\, mobility (µ0 ) and transconductance (gm) have been characterized. The method used to ch aracterize the transistors is based on the linear-extrapolation technique in which VTH is obtained by the linear extrapolation of the I_D⁄√(g_m ). Another additional method\, based on the calculation derivate is used\ , to validate the results obtained. These measurements have been performed at different back voltages (to deplete the sensor). The extraction of par ameters is an important part of the device modeling and characterization p rocess. Parameter calculations at two drain voltage conditions are used\, 20mV and 50mV. The four calculations obtained agree with the values given by the technology. \n\nThe charge sensitive amplifiers were the first circ uits tested. They were implemented in both WINFAB and OKI technologies. The amplifiers were based on a standard folded cascade core with a feedbac k capacitor. To aid in the circuit design and dimensioning of the transis tors\, a gm/Id methodology was used. This methodology provides a rapid pro cess-independent method of dimensioning transistors. Detector and amplifi er specifications are used as inputs to a dimensioning plan to determine t ransistor sizes. The result is then simulated in ELDO to verify the funct ioning of the circuit. Measurement results will be presented and discussed \, as the results agree with the simulations performed.\n\nhttp://indico.c ern.ch/contributionDisplay.py?contribId=63&sessionId=14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=63&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Development and characterization of the latest X-ray SOI pixel sen sor for a future astronomical mission DTSTART;VALUE=DATE-TIME:20120904T054000Z DTEND;VALUE=DATE-TIME:20120904T060000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-65@cern.ch DESCRIPTION:Speakers: Mr. NAKASHIMA\, Shinya (Kyoto Univ.)\nWe have been d eveloping a novel active pixel sensor\, X-ray SOIPIX (Silicon-On-Insulator Pixel Sensor)\, for a future X-ray astronomical mission. \nIt offers wide -band and high-time-resolution imaging spectroscopy with a low non-X-ray b ackground rate.\nThe most distinguished feature of X-ray SOIPIX is an intr a-pixel trigger system for the timing detection.\nWe have so far demonstra ted that prototypes have the 10 us time resolution with the trigger system and the full depletion layer of 250 um.\n\nA new prototype\, named XRPIX2 \, has been produced in 2012.\nIt consists of two different size pixel arr ays for evaluation of the design\; one is 30 um pixel pitch with the forma t of 144 x 64 (small pixel array)\, and the other is 60 um pixel pitch wit h the format of 72 x 36 (large pixel array).\nWe increased the sense-node gain with reducing the parasitic capacitance in both pixel size arrays. \n In order to improve the charge collection efficiency\, we applied multi-vi a structure in the part of the large pixel array. \nWe will talk about the detailed design and characterization of XRPIX2.\n\nhttp://indico.cern.ch/ contributionDisplay.py?contribId=65&sessionId=5&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=65&sessionId=5& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:CdTe pixel detector development for synchrotron radiation experime nts DTSTART;VALUE=DATE-TIME:20120904T015000Z DTEND;VALUE=DATE-TIME:20120904T021000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-66@cern.ch DESCRIPTION:Speakers: HIRONO\, Toko (Japan Synchrotron Radiation Research Institute)\nThis study describes a CdTe pixel detector development for the next generation high energy X-ray diffraction experiments at synchrotron radiation facilities. In such applications\, a high stopping-power semicon ductor material for the sensor and an X-ray photon counting capability for the ASIC are required. A Custom-designed ASIC (SP8-02) has been developed with TSMC 0.25 micron CMOS process\, where each pixel has a preamplifier\ , a shaper\, a window comparator\, and a 20-bit counter. The analog circui t was characterized with a fast setting of 100 nsec and a dynamic range fr om 10 keV to 100 keV. The window comparator has advantage to avoid electri c noise and fluorescent X-ray background by the lower threshold and higher -harmonics beam contamination by the upper threshold. We have fabricated a Pt/CdTe/Al-pixel sensor performing a Schottky diode detector with the ele ctron-readout operation. This electrode-metal configuration realized a low leakage current and a long-term stability in near room temperature. The s ensor was bump-bonded to the ASIC by the gold-stud bonding. The presentati on will describe the features of SP8-02 and SP8-02B ASICs forming the 200 um x 200 um pixel size with the 20 x 50 matrix. The Pt/CdTe/Al-pixel senso r performance will be also discussed in comparison with Pt/CdTe/Pt-pixel a nd In/CdTe/Pt-pixel sensors.\n\nhttp://indico.cern.ch/contributionDisplay. py?contribId=66&sessionId=4&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=66&sessionId=4& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:CMS pixel status DTSTART;VALUE=DATE-TIME:20120903T015000Z DTEND;VALUE=DATE-TIME:20120903T022000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-67@cern.ch DESCRIPTION:Speakers: GAZ\, Alessandro (University of Colorado at Boulder (US))\nThe core of the CMS experiment is a three layers pixel detector. In stalled in 2008 the CMS pixel system is essential for track seeding and re construction of secondary vertexes. The Pixel detector was designed for a peak luminosity of 1E34 cm-2s-1. The presentation will summarize the opera tional experience of the first three years of collisions at the LHC. We wi ll present the measured performance evolution as the Instantaneous luminos ity delivered increased by several order of magnitude including dynamic da ta-losses\, efficiency and resolution. The focus of the presentation will be on operational parameters\, online calibrations and a overview of the c hallenges encountered to present.\n\nhttp://indico.cern.ch/contributionDis play.py?contribId=67&sessionId=2&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=67&sessionId=2& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Silicon Sensors for HL-LHC Tracking Detectors – RD50 Status Repo rt DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-68@cern.ch DESCRIPTION:Speakers: DERVAN\, Paul (University of Liverpool (GB))\nIt is foreseen to significantly increase the luminosity of CERN’s Large Hadron Collider (LHC) by upgrading the LHC towards the HL-LHC (High Luminosity L HC) in order to harvest the maximum physics potential of the machine. Espe cially the final upgrade (Phase-II Upgrade) foreseen for 2021 will mean un precedented radiation levels\, exceeding the LHC fluences by roughly an or der of magnitude. Due to the radiation damage limitations of the silicon s ensors presently used\, the physics experiments will require new tracking detectors for HL-LHC operation. All-silicon central trackers are being stu died in ATLAS\, CMS and LHCb\, with extremely radiation hard silicon senso rs to be employed on the innermost layers. \n\nWithin the CERN RD50 Collab oration\, a massive R&D programme is underway across experimental boundari es to develop silicon sensors with sufficient radiation tolerance. One res earch topic is to gain a deeper understanding of the connection between th e macroscopic sensor properties such as radiation-induced increase of leak age current\, doping concentration and trapping\, and the microscopic prop erties at the defect level. We also study sensors made from p-type silico n bulk\, which have a superior radiation hardness as they collect electron s instead of holes\, exploiting the lower trapping probability of the elec trons due to their higher mobility. Another sensor option under investigat ion is to use silicon produced with the Czochralski-process. The high oxyg en content in the Czochralski-Silicon has been shown to have a beneficial influence on some of the effects of radiation damage. A further area of ac tivity is the development of advanced sensor types like 3D silicon detecto rs designed for the extreme radiation levels expected for the vertexing la yers at the HL-LHC. These detectors in general have electrodes in the form of columns etched into the silicon bulk\, which provide a shorter distanc e for charge collection and depletion\, which reduces trapping and full de pletion voltage. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences . Based on these results\, we will give recommendations for the silicon de tectors to be used at the different radii of tracking systems in the LHC d etector upgrades. \nThis presentation will cover the most recent RD50 resu lts in a number of areas. Amongst these is the performance of 3D detectors before and after HL-LHC irradiation\, demonstrating that the 3D technolog y has become a reliable candidate for LHC-Upgrades. Electric field measure ments in heavily irradiated planar detectors will be presented\, obtained in an edge-TCT setup with an infrared laser shining onto the polished edge of silicon detectors parallel to the detector surface. The field measurem ents are showing surprisingly high electric fields in the range of 0.5 V p er micrometer in the undepleted silicon. The existence of this strong fiel d can help to explain the unexpectedly good performance of planar silicon detectors after more than 10E16 Neutron-equivalent per cm2. \n\nObservati ons of charge multiplication effects at very high bias voltages in a numbe r of detectors will be reported. In this context\, we will show first meas urements from a set of dedicated detectors designed in order to better und erstand the charge multiplication mechanism\, thought to originate from av alanche multiplication in the high-field region of the detectors.\n\nhttp: //indico.cern.ch/contributionDisplay.py?contribId=68&sessionId=14&confId=1 37337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=68&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Future trends of 3D silicon sensors DTSTART;VALUE=DATE-TIME:20120907T001000Z DTEND;VALUE=DATE-TIME:20120907T003000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-69@cern.ch DESCRIPTION:Speakers: Dr. DA VIA\, Cinzia (University of Manchester (GB))\ nVertex detectors for the next LHC experiments upgrades will need to have low mass while at the same time be radiation hard and with sufficient gran ularity tu fulfill the physics challenges of the next decade. Based on the gained experience with 3D silicon sensors for the ATLAS IBL project and t he ongoing developements on light materials\, interconnectivity and coolin g\, this paper will discuss possible solutions to these requirements.\n\nh ttp://indico.cern.ch/contributionDisplay.py?contribId=69&sessionId=10&conf Id=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=69&sessionId=10 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Toward one Giga frames per second: Evolution of In-situ Storage Im age Sensors DTSTART;VALUE=DATE-TIME:20120904T074000Z DTEND;VALUE=DATE-TIME:20120904T080000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-2@cern.ch DESCRIPTION:Speakers: Dr. YAMADA\, Tetsuo (Tokyo Polytechnique University) \nIn 2001\, a video camera of one million frames per second (1 Mfps) was d eveloped by Etoh et al. In-situ Storage with more than one hundred CCD mem ory elements were installed for each pixel. Simultaneous recording in all pixels realized the ultra-fast image capturing. The pixel count was 86 kpi xels. The type of the sensors was named ISIS\, In-situ Storage Image Senso r. They have been continuously evolving in the frame rate\, the sensitivit y and the pixel count. In 2011\, a backside illuminated ISIS with EM-CCD a chieved 16 Mfps with 165 kpixels and the sensitivity of several photons pe r pixel. It was a prototype image sensor. The authors are currently develo ping the practical version with 344 kpixels. The authors proposed a new ar chitecture which can achieve 100 Mfps with the fill factor of 100%. The th eoretical highest frame rate achievable by this architecture is 1 Gfps.\nI n 2012\, a CMOS version was reported by Tochigi et al. The highest frame r ate of the camera was 20 Mfps for 50 kpixels.\nAnother direction of evolve ment of ISISes is introduction of new functions: among them are in-pixel s ignal accumulation which drastically improves S/N ratio in imaging of repr oducible phenomena with very low light intensity\, and user-friendly utili ty functions\, such as a built-in multi-camera\, a double- trigger system\ , and so forth.\nThe sensors are expected to be applied not only to the ul tra-high-speed imaging for visible light\, but also to imaging with other electromagnetic waves\, imaging TOF MS\, pulse-neutron radiography\, etc.\ nThis paper reviews the evolution of the ISISes.\n\nhttp://indico.cern.ch/ contributionDisplay.py?contribId=2&sessionId=5&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=2&sessionId=5&c onfId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:The Belle II pixel detector: high precision with low material DTSTART;VALUE=DATE-TIME:20120903T052000Z DTEND;VALUE=DATE-TIME:20120903T054000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-6@cern.ch DESCRIPTION:Speakers: Dr. MARINAS PARDO\, Carlos (Bonn University)\nAn upg rade of the existing Japanese Flavour Factory (KEKB in Tsukuba\, Japan) is under construction\, and is foreseen for commissioning by the end of 2014 . This new e+e− machine ("SuperKEKB") will deliver an instantaneous lumi nosity of 8⋅10^35 cm−2s−1\, which is 40 times higher than the world record set by KEKB.\n\nIn order to be able to fully exploit the increased number of events and provide high precision measurements of the decay vert ex of the B meson systems in such a harsh environment\, the Belle detector will be upgraded ("Belle II") and a new silicon vertex detector\, based o n the DEPFET technology\, will be designed and constructed. The new pixel detector\, close to the interaction point\, will consist of two layers of DEPFET active pixel sensors. This technology combines the detection togeth er with the in-pixel amplification by the integration\, on every pixel\, o f a field effect transistor into a fully depleted silicon bulk. In Belle I I\, DEPFET sensors thinned down to 75 μm with low power consumption and l ow intrinsic noise will be used.\n\nIn the talk\, a general overview of th e pixel detector will be presented\, from the sensor description to the da ta transmission chain\, all the way up the ASICs and the cooling concept.\ n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=6&sessionId=3&co nfId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=6&sessionId=3&c onfId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Design and manufacturing of a Monolithic Active Pixel Sensor in a CMOS Image Sensor (CIS) 180 nm technology DTSTART;VALUE=DATE-TIME:20120906T004000Z DTEND;VALUE=DATE-TIME:20120906T010000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-99@cern.ch DESCRIPTION:Speakers: MYLROIE-SMITH\, James Edwin (University of Liverpool (GB))\nThe Arachnid collaboration has been set up in the UK to develop CM OS Monolithic Active Pixel Sensors. The first device of this collaboration is named Cherwell. The Cherwell device consists of several arrays of pixe l optimised either for vertexing or for calorimetry. For the former\, two subarrays were designed. The first one has 96x48 pixels on a 25 um pitch. Each pixel consists of a low-noise 4T pixel\, lifted from the previously t ested sensor FORTIS. The readout is on a rolling shutter basis with a fine resolution 10-bit\, single-slope column parallel ADC. The second array ha s a similar structure but the column-parallel ADC was folded back into the array\, to generate strixels. The use of the INMAPS process allows the PM OS transistors for the ADC to be isolated into deep P-wells islands\, thus preserving the 100% fill factor of the pixel. The pixels for calorimetry are arranged into 2 arrays: one of 96x48 pixels on a 25um pitch and the on e of 48x24 pixels on a 50 um pitch. Readout is done through column-paralle l ADC as the ones used for the tracking array. The pixel architecture is b uilt around the same 4T pixel mentioned above\, but has additional devices to provide snapshot and in-pixel correlated double sampling (CDS) capabil ity. At the periphery of the 25um pixel array\, additional circuitry is ad ded to provide charge summing of 2x2 pixels during readout. The Cherwell s ensor was manufactured on a standard resistivity as well as on high (>1kOh m cm) epitaxial wafers. This latter would allow the charge collection to b e helped by an electric drift field. The sensor is currently being charact erised with different sources of radiation and experimental results will b e presented at the conference.\n\nhttp://indico.cern.ch/contributionDispla y.py?contribId=99&sessionId=7&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=99&sessionId=7& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:The Diamond Beam Monitor for Luminosity Upgrade of ATLAS DTSTART;VALUE=DATE-TIME:20120903T054000Z DTEND;VALUE=DATE-TIME:20120903T060000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-98@cern.ch DESCRIPTION:Speakers: KAGAN\, Harris (O)\nLuminosity monitors\, beam monit ors and tracking detectors of the\nexperiments at the Large Hadron Collide r and their upgrades must be able to operate in radiation environments sev eral orders of magnitude harsher than those of any current detector. We ha ve observed in ATLAS that as the environment becomes harsher\, detectors n ot segmented\, either spatially or in time\, have difficulty handling the separation of signal from background. Once the charged particle multiplici ty reaches the point where all segments of these detectors have a high pro bability of having a hit in every bunch crossing their sensitivity quickly vanishes. This is already happening in ATLAS to the MBTS luminosity count ers that will be removed in the 2011 year-end shutdown and LUCID luminosit y counters. Chemical Vapor Deposition (CVD) diamond has a number of proper ties that make it an attractive alternative for high energy physics detect or applications. Its large band-gap (5.5 eV) and large displacement energy (42 eV/atom) make it a material that is inherently radiation tolerant wit h very low leakage currents and high thermal conductivity. CVD diamond is being investigated by the RD42 Collaboration for use very close to LHC int eraction regions\, where the most extreme radiation conditions are found. The ATLAS Diamond Beam Monitor project (DBM) is a highly spatially segment ed diamond-based luminosity monitor to measure bunch-by-bunch luminosity i n ATLAS. The DBM will complement the highly time-segmented ATLAS BCM so th at when the other ATLAS luminosity monitors (MTBS and LUCID) have difficul ty functioning the ATLAS luminosity measurement which is a key to most pre cision measurement is not compromised. The DBM will provide three orders o f magnitude higher spatial segmentation (relative to the single BCM pads) at the expense of lower (25 ns vs sub-2 ns) time resolution. However these two systems will complement one and each other in our characterization of the beam backgrounds. The BCM will still use its exquisite timing resolut ion to localize beam background sources up (or down) stream of ATLAS\, whi le the DBM will provide additional spatial information about the source(s) of background. To accomplish these goals\, the DBM architecture is four 3 -layer telescopes on each side of the interaction point with each layer ha ving the size of one FE-I4 module\, namely 20mm x 16.8mm active area. The first and last layers of the telescope are offset so that particles from b oth the ATLAS interaction point and beam halo background can be tracked. I t is foreseen to install the DBM during the long shutdown of LHC in 2013/1 4 together with the ATLAS Insertable B-Layer (IBL) upgrade of the pixel de tector. DBM shares a lot of parts with the IBL project mainly in off detec tor area. The development of the DBM components are is well advanced and t he project enters now the production phase to be ready for integration in 2013. Several DBM modules made of a FE-I4 readout chip bump bonded to a CV D diamond have been built and tested in laboratory and test beams. The res ults from these prototype detectors and status of other project components like mechanics and readout will be presented.\n\nhttp://indico.cern.ch/co ntributionDisplay.py?contribId=98&sessionId=3&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=98&sessionId=3& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Applications of a High-contrast X-ray CT to Polymers\, Insects\, P lants\, Foods\, etc. DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-90@cern.ch DESCRIPTION:Speakers: Dr. BABA\, Sueki (Beamsense Co. Ltd. Japan)\nSince p olymers mainly consist of the light atomic elements\, the transmission of polymers against X-rays is usually too high to be visualized in X-ray micr oscopy\, and hence\, it has been considered that the polymers are not suit able for the X-ray computerized tomography (XCT). We calculate the X-ray a bsorption coefficients of various polymers and find the reasonably good co nditions for the XCT observations of polymers: the use of 15 KeV X-rays on average can resolve the polystyrene and poly(methy methacrylate) in 3 μm spatial resolutions. According to this calculation\, we build a XCT and e xperimentally confirmed the visualization of the phase-separation structur es of PS/PMMA blends. Thus developed apparatus is applied to many kinds of subjects\, such as insects\, plants\, foods\, and so on.\n\nhttp://indic o.cern.ch/contributionDisplay.py?contribId=90&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=90&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Structural and electrical properties of polycrystalline CdTe films for direct X-ray imaging detectors DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-93@cern.ch DESCRIPTION:Speakers: Dr. CHA\, Bo Kyung (KERI)\nIn recent years\, direct conversion flat-panel X-ray imaging detectors have been researched and use d in various medical applications such as chest radiography\, mammography and fluoroscopy imaging. In direct detection method\, an X-ray photoconduc tor is used as a conversion material to transform the absorbed X-ray photo ns to electrical charge\, which carries the corresponding signal. In addit ion to amorphous selenium\, the various photoconductor materials such as l ead iodide (PbI2)\, mercury iodide (HgI2)\, lead oxide (PbO) and cadmium t elluride (CdTe) or cadmium zinc telluride (CdZnTe) have reported the signi ficant potential. Among many photoconductors mentioned\, CdTe direct-conve rsion material has been considered as very an attractive candidate for hig h energy X-ray imaging application. \nIn this work\, polycrystalline CdTe films were fabricated on ITO/glass substrate by both physical vapor depos ition (PVD) with slow deposition rate and pressure of 10-6 torr and closed space sublimation (CSS) method with high deposition rate and low vacuum p ressure(10-3 torr). The various polycrystalline CdTe films were grown by d ifferent deposition rate\, substrate temperature\, annealing condition. Ph ysical properties such as microstructures\, crystal structure of the polyc rystalline samples were investigated by SEM and XRD pattern respectively. The microstructures with columnar shape and more uniform surface were obse rved in PVD method. On the other hand\, the microstructures with many larg er grains and less uniform surface were shown in CSS method. The films wer e polycrystalline structure with preferential (111) direction. The electri cal properties such as the dark current as a function of applied bias\, X- ray sensitivity and signal-to-noise ratio (SNR) of the fabricated films we re measured and investigated under X-ray exposure condition. The obtained experimental results will be presented in detail.\n\nhttp://indico.cern.ch /contributionDisplay.py?contribId=93&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=93&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:X-ray characterization of CMOS imaging detector with high resoluti on for fluoroscopic imaging application DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-92@cern.ch DESCRIPTION:Speakers: Dr. CHA\, Bo Kyung (KERI)\nIn recent years\, CMOS(Co mplementary metal oxide semiconductor)-based X-ray imagers have been resea rched and used for high resolution and real time X-ray imaging application . The CMOS image sensor has many advantages such as the higher readout spe ed\, low noise and high system integration compared to amorphous silicon f lat panel detector. Besides the lower noise and higher speed\, the smaller pixel size can be able to acquire X-ray image with higher spatial resolut ion. The drawback of CMOS technology is the limited size and less resistiv e to X-ray irradiation in comparison with a-Si TFT array X-ray imager. How ever\, the small size limitation of CMOS image sensor can be overcome by t iling the detector into larger mosaics. \nIn this work\, The CMOS de tector was fabricated using a 0.35um 1poly/4metal standard CIS process. Th e CMOS detector has 94x24 pixel array of 100um x100um pixel size. The colu mn-parallel readout architecture was used to reduce the operating speed an d the random noise. The 14-bit extended counting ADC was used to reduce th e area and simultaneously improve the image resolution. The CMOS detector of different frame rates with 30fps (frame per second) in normal mode and 60fps in binning mode was developed for low dose fluoroscopic application. \nFor measurement of the X-ray imaging characterization\, a thallium-dop ed CsI(CsI:Tl) scintillator film of 200um thickness was directly deposited on the CMOS photodiode array by thermal evaporation method. The Gd2O2S:Tb scintillation screen with different thickness was also used for compariso ns of X-ray image performance. The X-ray imaging performance such as the l ight response to X-ray exposure dose\, signal-to-noise-ratio (SNR) and mod ulation transfer function (MTF)\, image lag etc. were measured under pract ical fluoroscopic systems.\n\nhttp://indico.cern.ch/contributionDisplay.py ?contribId=92&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=92&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Planar pixel detector module development for the HL-LHC ATLAS pixe l system DTSTART;VALUE=DATE-TIME:20120907T021000Z DTEND;VALUE=DATE-TIME:20120907T023000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-95@cern.ch DESCRIPTION:Speakers: BATES\, Richard (University of Glasgow (GB))\nThe AT LAS pixel detector for the HL-LHC will require the development of large ar ea pixel modules that can withstand does up to 2x1016 neq cm-3. The area o f the pixel system will be over 5m2 and as such low cost\, large area modu les are required. The development of a quad module based on 4 FE-I4 ROIC w ill be discussed. The FE-I4 ROIC is a large area chip and the yield of the flip-chip process on single chips and the quads is covered. The readout o f the quad module for laboratory tests will be reported. To reduce mass of the system the assembly will be required to be as thin as possible and th e insensitive edges of the sensors also need to be reduced to a minimum. T he thin edge is achieved by reducing the physical edge of the sensor and b y the use of through-silicon vias to move the wire bond pads from the edge of ROIC to its backside. Progresses in these areas are discussed.\n\nhttp ://indico.cern.ch/contributionDisplay.py?contribId=95&sessionId=10&confId= 137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=95&sessionId=10 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Radiation hardness and slim edge studies of planar n-in-n ATLAS pi xel sensors for HL-LHC upgrades DTSTART;VALUE=DATE-TIME:20120907T013000Z DTEND;VALUE=DATE-TIME:20120907T015000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-94@cern.ch DESCRIPTION:Speakers: WITTIG\, Tobias (Technische Universitaet Dortmund ( DE))\nATLAS plans two major upgrades of its pixel detector on the path to HL-LHC: First\, the insertion of a 4th pixel layer (Insertable B-Layer\, I BL) is currently being prepared for 2013. This will enable the ATLAS track er to cope with an increase of LHC's peak luminosity to about 3E34 cm^-2 s ^-1 which requires a radiation hardness of the sensors of up to 5E15 n_eq cm^-2. Towards the end of this decade\, a full replacement of the inner tr acker is foreseen to cope with luminosities of up to 1E35 cm^-2 s^-1 at HL -LHC. Here\, the innermost pixel layer will have to withstand a radiation damage of 2E16 n_eq cm^-2.\n\nBecause of an inactive safety margin around the active area\, the sensor modules of the present ATLAS pixel detector h ave been shingled on top of each other's edge which limits the thermal per formance and adds complexity. For the IBL and the HL-LHC upgrade of ATLAS\ , a flat arrangement of the sensors is foreseen. Therefore\, it is essenti al to reduce the inactive edge to a minimum so the required level of detec tor hermeticity can be achieved.\n\nN-in-n sensor assemblies based on the current ATLAS pixel read-out chip FE-I3 as well as on the new FE-I4 chip h ave been irradiated to IBL and HL-LHC fluences using thermal neutrons in L jubljana as well as protons in Karlsruhe and at CERN PS. Magnetic-Czochral ski bulk sensors were irradiated with neutrons and protons which models th e expected scenario for the medium layers. Space resolved analysis results such as hit efficiencies from data taken in CERN SPS and DESY test beams are going to be shown. Further unirradiated and irradiated pixel sensors w ith a dedicated design were studied in test beams to investigate the effic iency performance in their edge region.\n\nA promising method to reduce th e inactive peripheral sensor region to a minimum is the scribe\, cleave an d passivate (SCP) technique. First results of such post processed planar n -in-n pixel sensors will be shown.\n\nhttp://indico.cern.ch/contributionDi splay.py?contribId=94&sessionId=10&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=94&sessionId=10 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:The New PILATUS3 ASIC with Instant Retrigger Capability DTSTART;VALUE=DATE-TIME:20120903T082000Z DTEND;VALUE=DATE-TIME:20120903T084000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-97@cern.ch DESCRIPTION:Speakers: Dr. SCHULZE-BRIESE\, Clemens (Dectris Ltd.)\nA novel photon counting method for non-paralyzable counting and its implementatio n in the new PILATUS3 ASIC are presented. Pulse pile-up significantly affe cts the observed count rate at high photon fluxes in single-photon countin g x-ray detectors and can lead to complete paralyzation of the counting ci rcuit. In PILATUS single-photon counting hybrid-pixel x-ray detectors\, co unt rate correction is applied in order to compensate for the counting los s at high count rates. However\, counter paralyzation limits the maximum u sable count rate of the PILATUS2 ASIC to typically 2*10^6 photons per seco nd and pixel. In order to overcome this limitation\, instant retrigger cap ability is introduced as a new photon counting method that results in non- paralyzable counting and achieves improved high-rate counting performance. The instant retrigger capability re-evaluates the pulse signal after a pr edetermined dead time interval after each count and potentially retriggers the counting circuit in case of pulse pile-up. The respective dead time i nterval is adjustable and accounts for the width of a single photon pulse. As a result\, the counting becomes non-paralyzable and enhanced count rat e correction can be applied in order to achieve improved data quality at h igh count rates. The new PILATUS3 ASIC features instant retrigger capabili ty with adjustable dead time. The implementation of this new approach and experimental results are presented. The new ASIC additionally features cou nter overflow handling\, improved pixel uniformity\, reduced crosstalk\, r educed readout time\, and compatibility with CdTe sensors. With the new de sign\, higher count rates can be measured and better data quality is achie ved up to rates of more than 10^7 photons per second and pixel.\n\nhttp:// indico.cern.ch/contributionDisplay.py?contribId=97&sessionId=3&confId=1373 37 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=97&sessionId=3& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Advances in the Development of Pixel Detector for the SuperB Silic on Vertex Tracker DTSTART;VALUE=DATE-TIME:20120903T045000Z DTEND;VALUE=DATE-TIME:20120903T052000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-96@cern.ch DESCRIPTION:Speakers: Dr. PAOLONI\, Eugenio (INFN Pisa)\nThe latest advanc es in the design and characterization of several pixel sensors\ndeveloped to satisfy the very demanding requirements of the innermost layer of the\n SuperB Silicon Vertex Tracker will be presented in this paper.\nThe SuperB machine is an electron positron collider operating at the Y4S peak to\nbe built in the very near future by the Cabibbo Lab consortium.\nA pixel det ector based on extremely thin\, radiation hard devices able to\ncope with rate in the tens of MHz/cm^2 range will be the optimal solution\nfor the u pgrade of the inner layer of the SuperB tracking system.\nAt present sever al options with different levels of maturity are being investigated to und erstand advantages\nand potential issues of the different technologies:\nt hin hybrid pixels\, Deep N-Well CMOS MAPS\,\nINMAPS CMOS MAPS featuring a quadruple well and high resistiviy substrates and CMOS\nMAPS realized with Vertically Integration technology.\nThe newest results from beam test\, t he outcomes of the radiation damage studies\nand the laboratory characteri zation of the latest prototypes will be reported.\n\nhttp://indico.cern.ch /contributionDisplay.py?contribId=96&sessionId=3&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=96&sessionId=3& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:EIGER characterization results DTSTART;VALUE=DATE-TIME:20120904T021000Z DTEND;VALUE=DATE-TIME:20120904T023000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-11@cern.ch DESCRIPTION:Speakers: Dr. DINAPOLI\, Roberto (Paul Scherrer Institut)\nEIG ER is the next generation single photon counting x-ray detector developed at Paul Scherrer Institut for synchrotron based applications. It is a hybr id silicon pixel detector that features a 75x75 um2 pixel size\, a high ma ximum frame rate capability of ~22 kHz (independent on the detector size)\ , double buffered storage for continuous readout and a negligible dead tim e between frames of ~3-4 us. \nCharacterization and performance measuremen ts have been done on several single chip detector systems\, produced with chips coming from two different lots\, both with a lab x-ray source and at the Swiss Light Source. Results on the detector calibration\, electronic noise\, threshold dispersion\, minimum selectable energy threshold\, maxim um detectable incoming photon flux and maximum frame rate will be presente d. Furthermore\, radiation endurance tests with doses up to ~150 Mrad in t he sensor and ~60 Mrad in the chip will be shown. These tests prove that t he chip is fully functional and suited for multi-chip modules and larger m ulti-module detectors.\nAn EIGER module is constructed from a ~4x8 cm2 mon olithic sensor bump-bonded to 4x2 readout chips\, thus resulting in a 0.5 Mpixel detector. Several modules can be tiled together to form large area detectors and a 16 Mpixel system is already planned. \nThe first X-ray ima ges and characterization results of a fully working module assembled with its complete readout electronics will be also presented.\n\nhttp://indico. cern.ch/contributionDisplay.py?contribId=11&sessionId=4&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=11&sessionId=4& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Front end electronics for European XFEL sensor: the AGIPD project DTSTART;VALUE=DATE-TIME:20120904T080000Z DTEND;VALUE=DATE-TIME:20120904T082000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-10@cern.ch DESCRIPTION:Speakers: MARRAS\, Alessandro (Deutsches Elektronen-Synchrotro n)\nThe European X-ray Free-Electron Laser Facility will generate extremel y brilliant\, ultra-short pulses of X-rays\, imposing challenging constrai nts to the detectors to be used in the experiments. It is expected to have a peak brilliance of 10^33 ph/(s mm^2 mrad^2 0.1%BW)\, 9 orders of magnit ude more than 3rd generation synchrotron sources. The flux will be such th at many pixels will have to cope with much more than one photon (up to 10^ 4) per pulse\, while required to retain single (or better than poissonan s tatistics) photon sensitivity. This will also expose the system to a subst antial amount of radiation\, estimated for the readout ASIC to be of the o rder of tens of MGys. The time structure of the beam will consist in a seq uence of tight bunches of Xray pulses (up to 2700 pulses in 0.6ms) separat ed by a period of 99.4 ms. Each pulse will be around about 100 fs long.\nF rom the detector designer’s point of view\, this means that the front en d has to cope with a high dynamic range\, while having a noise low enough to discriminate single photons. Photon counting cannot be use (because of the high flux per pixel)\, and the sensor is required to provide a way to store the information from several (ideally\, all) pulses on-board\, to be read out in the interval between trains. At the same time\, it also has t o be substantially radiation-hard.\nThe AGIPD (Adaptive Gain Integrating P ixel Detector) is being developed as a way to cope with such challenges. I t consists in a 1Mpixel hybrid pixel detector\, featuring a pitch of 200μ m\; the readout will be performed by means of 16x16 ASICs\, each composed of 64x64 pixels. The development is shared between DESY\, PSI\, the univer sities of Hamburg and Bonn.\nThe large dynamic range and single photon sen sitivity issues was tackled with a dynamically adjustable charge amplifier integrated inside each pixel\, ranging over 2 orders of magnitude\, so th at its gain is adjusted real-time to the number of absorbed photons. Tests prove the system to work correctly\, both in terms of dynamic range and i n terms of speed. Our target for the noise is to keep it at about 0.1 phot ons of 12.4 keV (300~400 e)\, so to allows for the requested single-photon sensitivity.\nCorrelated Double Sampling circuitry is included inside eac h pixel\, as well as an embedded memory able to store up to 350 frames per pulse train. This is certainly less than the ideal case\, since up to 270 0 images are produced during a pulse train\, but it comes as a compromise of keeping pixel dimensions reduced\, and of course out of leakage minimiz ation and radiation hard design issues. Radiation-hard design techniques h ave been employed\, with the use of Enclosed Layout Transistors and guard rings around the critical devices. \nMeasurement performed on test prototy pes confirm that in the operation range the leakage is low enough to keep the signal loss at less than 0.1% even for the last cells to be read.\nAs a partial solution of the limited memory depth problem\, the memory has be en designed to addressable RAM-like\, allowing the overwriting of memory c ells storing meaningless data by means of a veto schema. \nA Command Seria l interface has been included to address the pixels and their memory cells by means of 3 LVDS lines\nAn irradiation campaign has been performed on t est prototype using a synchrotron source and exposing them to increasing d oses\, confirming a good behaviour for 1MGy-irradiated ASICs and the reten tion of functionality for 10MGy-irradiated ASICs. Several test prototypes have been produced on a reduced scale\, mainly by means of MPW runs and I will present the results of extensive tests\; we foresee the ASIC for the full detector to be ready for the end of the year.\n\nhttp://indico.cern.c h/contributionDisplay.py?contribId=10&sessionId=5&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=10&sessionId=5& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:3D integration of Geiger-mode avalanche photodiodes for future lin ear colliders DTSTART;VALUE=DATE-TIME:20120905T014000Z DTEND;VALUE=DATE-TIME:20120905T020000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-13@cern.ch DESCRIPTION:Speakers: Ms. VILELLA-FIGUERAS\, Eva (Department of Electronic s - University of Barcelona)\nGeiger-mode avalanche photodiodes (GAPDs) of fer excellent qualitites to meet the challenging requirements of the next generation of particle colliders. High sensitivity\, fast timing response\ , virtually infinite gain and compatibility with standard CMOS technologie s are some of the properties that make these devices so attractive. In fac t\, owing to to their extraordinary sensitivity and picosecond rise times\ , GAPDs enable single hit detection at each bunch crossing. In spite of al l these advantages\, GAPD detectors suffer from two main problems. First\, they generate noise pulses that cannot be distinguished from radiation tr iggered events. As a consequence\, the noise counts may lead to erroneous results and limit the range of detectable signals. Second\, they present a low fill factor\, which has a typical value around 40-50% and results in a low detection efficiency. Fortunately\, the noise can be coped with adva nced techniques\, such as the gated operation or particle sampling at vari ous layers. Nevertheless\, it is difficult to increase the fill factor wit h standard technologies. In this contribution\, the 3D vertical integratio n of a multilayer detector is proposed to overcome the fill factor limitat ion of standard GAPDs.\n\nThe reduced fill factor is basically due to two aspects related with the design of the pixel. On the one hand\, to the rea dout electronics\, which is monolithically integrated with the sensor to i mprove the dynamic response. The readout electronics usually consists of a simple inverter and a memory element. However\, additional transistors ar e needed to perform the gated operation and also to control the outward da ta flow. In our case\, the readout electronics is composed of a maximum of 10 transistors\, which are still too many compared with a sensor area of 20µmx20µm. On the other hand\, in a conventional CMOS process the photod iodes are implemented by means of a p+/n-well junction and surrounded by a p-well with a lower doping profile to prevent premature edge breakdown. I n particular\, for those technologies below the 0.25µm node where the sha llow trench isolation (STI) is used to prevent the punchthrough and latch- up\, it is necessary to increase this non-active ring to avoid a dramatic increase of the noise (up to 1MHz). As a result\, the non-active area is q uite large compared with the sensitive area.\n\nThis paper presents an ana lysis of the achievable fill factor by an array of GAPDs with the 130nm CM OS process by Tezzaron\, which allows the vertical stacking of two tiers. Fill factors between 75% and 96% have been obtained considering different structures with and without interconnection between tiers. Moreover\, diff erent sensor areas have been used to maximize the overlap between the non- active area from one tier and the sensor area of the other one. A chip con taining several arrays of GAPDs with different alternatives has been desig ned with the 130nm Tezzaron process.\n\nhttp://indico.cern.ch/contribution Display.py?contribId=13&sessionId=6&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=13&sessionId=6& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Analysis of Edge and Surface TCTs for Irradiated 3D Silicon Strip Detectors DTSTART;VALUE=DATE-TIME:20120906T233000Z DTEND;VALUE=DATE-TIME:20120906T235000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-12@cern.ch DESCRIPTION:Speakers: STEWART\, Graeme Douglas (University of Glasgow)\nWe performed edge and surface TCT measurements of a double sided 3D silicon strip detector at the Jozef Stefan Institute. Double sided 3D devices are a useful counterpart to traditional planar devices for use in the very hi ghest radiation environments. The TCT techniques allow the electric field s in 3D devices to be probed in a way not possible before.\nShort 3D strip detectors\, produced at CNM Barcelona\, have been used for this study. T he strip detectors had a substrate thickness of 280 micrometers and a stri p pitch of 80 micrometers. The columns\, that formed the electrodes\, had a diameter of 10 micrometers\, and were 250 micrometers deep. The junctio n electrodes were connected together to form the strips with 20 micrometer wide Aluminium metallisation. The Ohmic electrodes were all connected to gether on the backside of the device with a uniform contact. This is a sim ilar technology as to that used for the ATLAS IBL 3D pixel sensor candidat es. The detectors were tested both prior to irradiation and after irradia ting to 5 x 10^15 N/cm^2. Studies were performed into the effect of vary ing bias voltage and also the effect of annealing on the irradiated sample . An IR laser (1064 nm) was used to scan the devices with a FWHM of 7 mic rometers. Scans with a step of 2.5 micrometers were performed over the su rface of the device in both x and y directions\, illuminating either the f ront surface or the cut edge. The irradiation and edge polishing were com pleted at the Jozef Stefan Institute in Ljubljana.\nThe TCT experiment was undertaken in an atmosphere of dry air\, with the irradiated samples held at a temperature of -20°C. Annealing was achieved insitue by warming to 60°C for intervals of 20\, 40\, 100\, 300 and 600 minutes corresponding to room temperature annealing times of between 8 days and 200 days. 300 m inutes is equivalent to the amount of annealing expected for 7 years of op eration in an LHC experiment. \nThe current waveforms\, as a function of i llumination position and applied bias\, were obtained for both pre and pos t irradiated devices and after annealing. This gives information on the o rigin of the induced signal\, that is the portion from electron or hole mo tion. From the rise times of the signals\, the velocity profile of the car riers in the devices and therefore electric fields can be determined. The collected charge was calculated from the integral of the waveforms. The results are compared to previous simulations. \nThe current waveforms are analysed to give results such as the collected charge as a function of ill umination position for the front surface\, the cut edge and the velocity p rofile. \nThere is a clear non-uniformity of the sensors prior to irradiat ion. While the lateral depletion between the columns is low\, at approxima tely 4V\, a uniform carrier velocity between the columns is not achieved u ntil 5 times this value at 20V. Before irradiation\, both the drift of ele ctrons and holes provide equal contributions to the measured signals. Afte r irradiation there is clear charge multiplication enhancement along the l ine between columns with a very non-uniform velocity profile in the unit c ell of the device. The annealing of the detector further enhances this non -uniformity and charge multiplication effects.\n\nhttp://indico.cern.ch/co ntributionDisplay.py?contribId=12&sessionId=10&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=12&sessionId=10 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Development of Monolithic Active Pixel Sensors in 65 nm CMOS Techn ology DTSTART;VALUE=DATE-TIME:20120904T072000Z DTEND;VALUE=DATE-TIME:20120904T074000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-15@cern.ch DESCRIPTION:Speakers: DENES\, Peter (Lawrence Berkeley National Laboratory )\nThis work presents the design and characterization of a CMOS monolithic active pixel sensor manufactured in a commercial 65 nm process. The senso r is our first prototype in this technology for next generation\, ultra-hi gh resolution and radiation-hard direct detectors for electron and X-ray i maging\, and follows previous developments in 0.35 µm and 0.18 µm CMOS p rocesses. The chip features square pixels of 2.5 µm pitch arrayed on a 40 0x400 pixel matrix\, and subdivided in four sections implementing differen t pixel designs\, all based on the same 3-transistor (3T) architecture but varying in diode and transistor layout. The sensor has been extensively c haracterized in the laboratory in order to determine its charge-to-voltage conversion gain\, noise and leakage current performance. Electron detecti on tests have been performed on an FEI TITAN electron microscope at the LB NL National Center for Electron Microscopy (NCEM)\, including irradiation with 300 keV electrons to doses up to 200 Mrad. The presentation will revi ew the results from this characterization and discuss their interpretation as a function of the various pixel design features. The impact of effects such as gate leakage\, encountered in this technology but not observed in previous sensors manufactured in coarser feature size processes\, will al so be discussed.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId =15&sessionId=5&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=15&sessionId=5& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:A 200 Frames per Second\, 1-Megapixel\, Frame Store CCD camera for X-ray imaging DTSTART;VALUE=DATE-TIME:20120904T004000Z DTEND;VALUE=DATE-TIME:20120904T010000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-14@cern.ch DESCRIPTION:Speakers: DOERING\, Dionisio (LBNL)\nAt the Advanced Light Sou rce (ALS) at Lawrence Berkeley National Laboratory (LBNL) several experime nts are performed in the soft X-ray regime with energy ranging from a few hundred to a few thousand electron volts (eV). In such applications\, back -illuminated\, direct detection in silicon using conventional microelectro nics silicon wafer thicknesses (up to 650um)\, is close to 100% efficient for energies lower than 8 keV. At higher energies\, detector thickness lim its efficiency as silicon becomes increasingly transparent\, and at lower energies\, the thickness of the inert (contact) layer sets a low energy cu toff. This paper describes the performance of a 1MPixel Frame Store CCD ca mera for soft X-ray applications at synchrotron light sources. The camera can be operated in frame store mode with a 1Mpixel imaging area running at 200 frames per second (fps)\, or in full frame mode with a 2Mpixel imagin g area running at 100fps. The CCD outputs are serviced by custom-designed integrated circuits for gain selection and enhancement\, correlated double -sampling signal processing and digitization. The digitized data is acquir ed by a custom made image aquisition and camera controller board based on the Advanced Telecommunication Computing Architecture (ATCA) and later sen t to off-line processing or data storage. With the exception of the image acquisition and controller board\, the rest of the system is built using c ommercial off the shelf components. The presentation will describe the var ious components of the camera head\, readout system and the cooling system for in-vacuum operation.The performance of the system (gain\, linearity\, noise\, data throughput and others) has been characterized at a dedicated detector development beamline at the ALS using fluorescence X-rays from t hin metal foils. We will discuss the image processing algorithm used to ex tract these parameters and its impact on energy resolution performance. Th e preliminary results show an energy resolution of 150eVrms at 8keV\, with a noise of 90eVrms equivalent to 25e-.\n\nhttp://indico.cern.ch/contribut ionDisplay.py?contribId=14&sessionId=4&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=14&sessionId=4& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Towards Using a Monolithic Active Pixel Sensor for In-Vivo Beam Mo nitoring of Intensity Modulated Radiotherapy DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-17@cern.ch DESCRIPTION:Speakers: Dr. PAGE\, Ryan (University of Bristol)\nR. Page\, f or the BEAMView collaboration\n\nAbstract\n\n1 Introduction\n\nThe use of Intensity Modulated Radiotherapy (IMRT) for cancer treatments is entering wider use. These treatments involve using a complex configuration of field modifying components\, known as Multileaf Collimators (MLC)\, to dynamica lly shape the beam. A treatment consists of a sequence of irregular shaped fields\, which means real time monitoring and verification would be highl y beneficial. In the current framework the treatment plans are verified be fore the patient is treated\, but not during. The aim of our collaboration is to monitor the treatment being given to the patient. This is achieved by placing a camera system upstream of the patient. To monitor the beam du ring the treatment without attenuating the beam requires such a detector t o be as thin as possible. To be able to provide information about the prog ress of the treatment the data acquisition from the sensor must also be fa st. This will allow any errors in field shape to be detected at the time o f the treatment. The system is also sensitive to the beam intensity and th is can be used to ensure the correct dose is being delivered. The research that is funded by the National Institute for Health Research (NIHR) Inven tion for Innovation (i4i)programme1and presented here shows some of BEAMVi ew’s progress into achieving these goals.\n\n1This abstract presents ind ependent research commissioned by the National Institute for Health Resear ch (NIHR) under the Invention for Innovation (i4i)programme. The views exp ressed in this abstract are those of the author(s) and not necessarily tho se of the NHS\, the NIHR or the Department of Health\n\n2 Beam Monitoring Camera Prototype\n\nThe camera system consists of a large area (6 x 6 cm2) Monolithic Active Pixel Sensor (MAPS) and a readout system [3]. The senso r has a total thickness of ∼ 100 μm and contains 4096 x 4096 pixels\, w ith a pitch of 14 μm. A sensor at this thickness attenuates the beam by ∼ 0.1% and when the light shield is included this rises ∼ 0.16%\, base d on 2 MeV photons [1]. The sensor was operated at 10 frames per second wh en collecting data. During the experiments the system was attached to the linac head via an accessory holder. In this configuration the sensor was 5 6.4 cm from the source.\n\n3 MLC Leaf Position Reconstruction Methodology\ n\nIn a raw image from the beam camera the edge of a MLC leaf is character ised by a rapid change in signal intensity. An algorithm was developed tha t exploits this to locate the edge position of the MLC leaves. The approac h taken is to locate the edge positions of the MLCs using an image generat ed using the Sobel operators [2]. Prior to using the Sobel operators\, a 2 D gaussian smoothing filter is used to remove small pixel to pixel signal variations. The resulting image after both filters are applied shows the e dges of collimators defining the beam aperture.\nThis was carried out for a field size of 5 x 5 cm2 with two MLC leaves\, A and B protruding into th e field. The frame was acquired when the linac was operating at 400 Monito r Units/Min with a pulse repetition frequency of 400 Hz. In this context a single frame was the integral of ∼ 40 pulses.\nThis image can then be u sed to reconstruct the location of each of the MLC leaves\, A and B. This is carried out in three steps. The first step makes a 1 pixel projection o f the image onto the x-axis and locates the maximum point. A Gaussian prob ability distribution is then fitted around the maximum. The mean of this d istribution is used to construct a contour of the MLC leaf. The edge posit ion of the MLC leaf is modelled as a straight line. This model is then fit ted to a region of ∼ 30 pixels along the contour. The value determined f rom this fit is defined as the MLC leaf edge. A test was then carried out where the MLC leaf position was reconstructed for 100 individual frames to determine the resolution. The mean value of this distribution\, which def ines the leaf edge\, has an uncertainty of 0.06 (∼ 6 μm) pixels and a w idth of 0.5 (∼ 50 μm) pixels\, where the values in the parenthesis corr espond to the value at 100 cm from the source (defined as the isocentre). The width of this distribution corresponds to the single frame resolution\ , which is improved upon with\n10 seconds worth of data to 6 μm.\nTo stud y the performance of the edge reconstruction described in 3 a test was car ried out using\nGafchromic film. This method is standard in radiotherapy a nd has a precision of ∼ 0.5 mm. The film was placed on the patient couch under build up and exposed to 300 Monitor Units. The edge position was th en reconstructed using the film\, with the edge positioned defined as 50% of the maximum dose. This was carried out for different MLC leaf configura tions. In the first configuration both MLC leaves are side by side. Then M LC leaf A was moved away from MLC leaf B. The result of this experiment sh owed a linear relationship between the two sets of measurements. The resul t of a linear fit to the data gave a value of 0.1±0.5 for the intercept a nd 1.00±0.05 for the gradient. This agreement shows that within the resol ution of the film the reconstructed MLC leaf positions are consistent.\n\n 4 Current Status and Outlook\n\nThe results presented here show that this system in nominal operation using a thin MAPS sensor can determine a MLC l eaf position to within 6 μm for 10 seconds worth of data and 50 μm for a single frame. The resulting reconstructed MLC leaf positions agree with t he photon field edge determined using film to the limit of the film accura cy. Work is continuing to test and validate dose models. This combined wit h high resolution MLC leaf positioning will allow the system to be used as an online monitoring system.\n\nReferences\n\n[1] J.H. Hubbell and S.M. ( 2004) Seltzer. Tables of x-ray mass attenuation coefficients and mass ener gy-absorption coefficients (version 1.4). http://physics.nist.gov/xaamdi 2 012\, 4\, 3\,National Institute of Standards and Technology\, Gaithersburg \, MD.\n[2] J. Parker. Algorithms for Image Processing and Computer Vision . John Wiley and Sons\, New York\, 2nd edition edition\, 1996.\n[3] Renato Turchetta. CMOS Image Sensors for Non Visible Applications. Talk presente d at IS2012.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=17& sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=17&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:PImMS1 and PImMS2\, monolithic CMOS event-triggered time-stamping image sensors with storage of multiple timestamps at 25ns resolution DTSTART;VALUE=DATE-TIME:20120906T022000Z DTEND;VALUE=DATE-TIME:20120906T024000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-16@cern.ch DESCRIPTION:Speakers: JOHN\, Jaya John (University of Oxford)\nPImMS\, or Pixel Imaging Mass Spectrometry\, is a family of high-speed monolithic CMO S imaging sensors tailored to the requirements of mass spectrometry and al lied fields. PImMS pixels each compare step events of collected charge to an adjustable threshold\, storing up to four significant events inside the pixel as 12-bit timestamps with a time resolution of 25ns. The pixels may be individually trimmed to improve the uniformity of response. The pixels are relatively complex\, each containing over 600 transistors and measuri ng 70µm by 70µm. The first generation of these sensors\, PImMS1\, has an array of 72 by 72 pixels\, while PImMS2 provides a larger sensor area wit h 324 by 324 pixels and several new features. We will present an overview of the pixel and sensor architecture\, as well as presenting recent charac terisation and application results for PImMS1 and first characterisation r esults for PImMS2.\n\nhttp://indico.cern.ch/contributionDisplay.py?contrib Id=16&sessionId=7&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=16&sessionId=7& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Monolithic Pixel on High Resistance Substrate and Sparsifying Reda out Architecture DTSTART;VALUE=DATE-TIME:20120906T014000Z DTEND;VALUE=DATE-TIME:20120906T020000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-19@cern.ch DESCRIPTION:Speakers: GIUBILATO\, Piero (Universita e INFN (IT))\nWe start by presenting the latest results on the LePix sensor\, an innovative Mono lithic Active Pixel Sensor (MAPS) aimed at tracking/triggering tasks where high granularity\, low power consumption\, low material budget\, radiatio n hardness\, and production costs are a concern. The detector is built in a 90nm CMOS process on a substrate of moderate resistivity. This allows ch arge collection by drift while maintaining the other advantages usually of fered by MAPS\, like having a single piece detector and using a standard C MOS production line. \n\nThe collection by drift mechanism\, coupled to th e low capacitance design of the collecting node made possible by the monol ithic approach\, provides an excellent signal to noise ratio straight at t he pixel cell together with a radiation tolerance far superior to conventi onal un-depleted MAPS. We will illustrate the detector design and present measurement results obtained with first prototypes from radioactive source s\, laser probing and beam test experiments. The excellent signal-to-noise performance is demonstrated by the device ability to separate the 6 keV 5 5Fe double peak at room temperature.\n\nEnsuing the excellent pixel cell p erformances (sensitivity\, size\, power consumption) and considering that stitching is commercially available for such process\, we will then introd uce novel architectural approaches departing from the two nowadays most wi dely adopted solutions in pixel detectors (“rolling shutter” for the m onolithic and the “intelligent pixel” for the hybrids). The potential of having single-piece\, large area\, high granularity and low power pixel detectors puts a premium on architectures exploiting that at most\, espec ially from a power-consumption (and hence material budget) point of view. While illustrating the proposed architectures\, a complete review of both detector behaviors and physics goals\, together with quantitative referenc es and simulations of real-word experimental scenarios\, will highlight th e advantages of the proposed solution for many applications in both the Hi gh Energy Physics and applied sciences field.\n\nhttp://indico.cern.ch/con tributionDisplay.py?contribId=19&sessionId=7&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=19&sessionId=7& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Results from the Pilot Run of the Pixel Luminosity Telescopes\, a Luminosity Monitor for CMS Based on Single-Crystal Diamond Pixel Sensors DTSTART;VALUE=DATE-TIME:20120906T053000Z DTEND;VALUE=DATE-TIME:20120906T055000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-18@cern.ch DESCRIPTION:Speakers: HIDAS\, Dean Andrew (Rutgers\, State Univ. of New Je rsey (US))\nThe Pixel Luminosity Telescopes (PLT) is a dedicated luminosit y monitor for CMS based on single-crystal diamond sensors. It is designed to measure the bunch-by-bunch relative luminosity to high precision. It co nsists of a set of small angle telescopes each with three planes of single -crystal diamond pixel sensors. The full PLT will be installed in CMS for the first full energy operation of the LHC in 2014. Currently\, one quarte r of the PLT is installed in a forward region of CMS where it has been ope rating since the beginning of this year's run. This is the first operation of a diamond pixel tracking detector in a high energy physics experiment and is providing the first data on diamond pixel sensors under high partic le rate in a high radiation environment. We will report on the results obt ained during this pilot run including the dependence of the pulse height a nd the efficiency on particle rates up to several tens of MHz and the long term time dependence of the detector performance under the high radiation exposure. These studies provide a unique characterization and an essentia l understanding of diamond detectors important both for the operation of t he PLT and for the possible use of diamond sensors in the pixel detector u pgrades for high luminosity running of the LHC.\n\nhttp://indico.cern.ch/c ontributionDisplay.py?contribId=18&sessionId=8&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=18&sessionId=8& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Construction of SPring-8 Experimental Data Repository DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-116@cern.ch DESCRIPTION:Speakers: HISANOBU\, Sakai (Japan Synchrotron Radiation Resear ch Institute)\nSPring-8 experimental Data Repository system (SP8DR) has be en developed to support the handling of the experimental data. High brilli ant x-ray at the SPring-8 produces large quantities of data with a high da ta rate in a short time. It is difficult to manage experimental data conj unction with the experimental conditions without data management system. S P8DR manages a lot of experimental conditions as meta-data of experimental data for various x-ray experimental fields with same manner. SP8DR was bu ilt on the open source digital repository system\, DSpace. In this present ation\, we show an overview of the SP8DR and present status. An applicatio n to high-bandwidth data acquisition system for 2-dimentional detector is also discussed.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId= 116&sessionId=14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=116&sessionId=1 4&confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:A study on the dynamic range of integrating SOI chips DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-86@cern.ch DESCRIPTION:Speakers: ARAI\, Yasuo (High Energy Accelerator Research Organ ization (JP))\nIn the SOI process developed by KEK and LAPIS\, transistors can be divided into two groups by their nominal power supply\, 1.8V and 2 .5V respectively. All the past integrating SOI chips use 1.8V transistors in core circuit and 2.5V in IO buffers. To verify the idea of increasing d ynamic range of integrating charge\, a chip using 2.5V transistors in core circuit was submitted to MPW run in 2011. The test results show that an i ncreasement of 50% of dynamic range can be achieved by this way.\n\nhttp:/ /indico.cern.ch/contributionDisplay.py?contribId=86&sessionId=14&confId=13 7337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=86&sessionId=14 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:New prototypes for components of a control system for the new ATLA S pixel detector at the HL-LHC DTSTART;VALUE=DATE-TIME:20120905T022000Z DTEND;VALUE=DATE-TIME:20120905T024000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-44@cern.ch DESCRIPTION:Speakers: PULLEN\, Lukas (Uni-Wuppertal)\nIn the years around 2020 an upgrade of the LHC to the HL-LHC is scheduled\, which will increas e the accelerators luminosity by a factor of 10. In the context of this up grade\, the inner detector of the ATLAS experiment will be replaced entire ly including the pixel detector. This new pixel detector requires a specif ic control system which complies with the strict requirements in terms of radiation hardness\, material budget and space for the electronics in the ATLAS experiment. The University of Wuppertal is developing a concept for a DCS (Detector Control System) network consisting of two kinds of ASICs. The first ASIC is the DCS Chip which is located on the pixel detector\, ve ry close to the interaction point. The second ASIC is the DCS Controller w hich is controlling 4x4 DCS Chips from the outer regions of ATLAS via diff erential data lines. Both ASICs are manufactured in 130nm deep submicron t echnology. We present results from measurements from new prototypes of com ponents for the DCS network.\n\nhttp://indico.cern.ch/contributionDisplay. py?contribId=44&sessionId=6&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=44&sessionId=6& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Study of the collection of charge carriers generated close to the Si-SiO2 interface of silicon strip sensors before and after 1 MGy X-ray ra diation DTSTART;VALUE=DATE-TIME:20120906T051000Z DTEND;VALUE=DATE-TIME:20120906T053000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-45@cern.ch DESCRIPTION:Speakers: POEHLSEN\, Thomas (Hamburg University)\nThe collecti on of charge carriers generated in p+-n-strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigat ed using the transient current technique (TCT) with sub-nanosecond focused light pulses of 660 nm wavelength\, which has an absorption length in sil icon at room temperature of 3.5 μm.\n\nDepending on the applied bias volt age\, bias history\, humidity and irradiation\, incomplete collection of e ither electrons or holes has been observed when illuminating the strip sid e of the sensor. The data are described by a model which allows a quantita tive determination of the losses of holes\, the losses of electrons and th e width of the accumulation layer below the Si-SiO2 interface.\n\nFor non- irradiated sensors little or no charge losses are observed in equilibrium. However\, immediately after changing the biasing voltage the sensors are in a non-equilibrium state:\nElectron losses occur when the voltage is inc reased\, and hole losses occur when it is decreased. For irradiated sensor s electron losses are observed in equilibrium. When the voltage is ramped up the fraction of electrons lost increases\, when it is ramped down it de creases.\n\nThe time it takes to reach equilibrium is a strong function of humidity: Several days in a dry and of the order 60 minutes in a humid at mosphere. The charge losses and their dependence on bias history and humid ity can be qualitatively explained by the time it takes until the charges on the surface of the sensor are distributed in a way that the longitudina l electric field on the surface vanishes and a constant potential is reach ed. The difference in time it takes to reach the equilibrium is explained by the increase of the surface conductivity with increasing humidity.\n\nT he number of charges lost in one laser pulse decreases with the number of charges lost and thus accumulated in preceding pulses. The amount of charg e which has to be accumulated until the charge losses vanish\, and the tim e it takes that the initial charge losses are reestablished\, have been de termined with the laser operated in burst mode. \n\nThe observations for s ensors from two vendors built from silicon with different crystal orientat ions and different coupling of the read-out strips to the p+ implants are qualitatively similar.\n\nThe relevance of the results for the operation o f sensors is discussed.\n\nhttp://indico.cern.ch/contributionDisplay.py?co ntribId=45&sessionId=8&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=45&sessionId=8& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Optimal Temporal Windows and Dose-reducing Strategy for Coronary A rtery Bypass Graft Imaging with 256-Slice CT DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-42@cern.ch DESCRIPTION:Speakers: GUAN\, YU-XIANG (National Yang-Ming University)\nObj ective: To determine the optimal image reconstruction windows in the asses sment of coronary artery bypass grafts (CABGs) with 256-slice CT\, and to assess their associated optimal ECG pulsing windows for tube-current modul ation (ETCM). \nMethods: We recruited 18 patients (three female\; mean age 68.9 years) having mean heart rate (HR) of 66.3 bpm and a heart rate vari ability of 1.3 bpm for this study. A total of 36 CABGs with 168 segments w ere evaluated\, including 12 internal mammary artery (33.3%) and 24 saphen ous vein grafts (66.7%). We reconstructed 20 data sets in 5%-step through 0%-95% of the R-R interval. The image quality of the bypass grafts was ass essed by a 5-point scale (1=excellent to 5=non-diagnostic) for each segmen t (proximal anastomosis\, proximal\, middle\, distal course of graft body\ , and distal anastomosis). Two reviewers discriminated optimal reconstruct ion intervals for each CABG segment in each temporal window. Optimal windo ws for ETCM were also evaluated.\nResults: The determined optimal systolic and diastolic reconstruction intervals could be divided into 2 groups wit h threshold HR = 68. The determined best reconstruction intervals for low heart rate (HR 68) were 76.0 ± 2.5% and 45.0 ± 0% respectively. Average image quality scores were 1.8 ± 0.6 with good inter-observer agreement (k appa=0.79). Image quality was significantly better for saphenous vein graf ts versus arterial grafts (P \n\nhttp://indico.cern.ch/contributionDisplay .py?contribId=42&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=42&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Attenuation correction in PET/CT: optimum imaging parameters deriv ed from ultra low dose calcium score CT DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-43@cern.ch DESCRIPTION:Speakers: GUAN\, YU-XIANG (National Yang-Ming University)\nInt roduction: In cardiac PET/CT\, coronal calcium scoring CT (CCSCT) not only is a noninvasive assessment of the presence and location of calcified pla que but also could provide as attenuation correction (AC) maps. However\, the optimal radiation dose saving of CCSCT scan has not been studied. The purpose of this study is to determine optimum imaging parameters for atten uation correction in PET/CT based on ultra-low dose CCSCT with various bod y size.\nMaterials and methods: The study was performed using a modified Q RM-cardiac phantom including CCSCT scan and emission scan. The phantom con taining calibration inserts and additional phantom rings were used to simu late small\, medium-size\, and large patients. Agaston scores were calcula ted using CCSCT images (120 kV\, 300 mA) as standard and compared with low -dose parameter scans (from 300 to 10 mA\, 50 intervals). The assessment o f Agaston scores and standard uptake value (SUV) were carried out by paire d t test and Pearson’s correlation coefficient. Radiation doses from CCS CT were expressed by using CT dose index (CTDI).\nResult: The result showe d optimum tube current in small\, medium\, and large size was 50\, 100\, a nd 150 mA\, respectively. It was good correlation between Agatston score v alues\, calculated by 300 mA and low-dose CCSCT images\, as expressed by c orrelation coefficient and p value (r>0.9\, p\n\nhttp://indico.cern.ch/con tributionDisplay.py?contribId=43&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=43&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:The relation of pre-diabetes and region-specific visceral adipose tissue: quantified by multi-detector computed tomography DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-40@cern.ch DESCRIPTION:Speakers: Mr. LIN\, Yang-Hsien (Department of Biomedical Imagi ng and Radiological Sciences\, National Yang Ming University)\nBackground: Central obesity in relation to insulin resistance is strongly linked to t he development of diabetes. However\, data regarding the association betwe en peri-cardial and peri-aortic fat amount\, a real estimate of visceral a dipose tissue and pre-diabetes status remained elusive. \nObjective: The a im of this study was to examine whether pericardial and thoracic peri-aort ic adipose tissue\, when quantified by multi-detector computed tomography (MDCT)\, may differ substantially among subjects in normal\, pre-diabetes and overt diabetes status. \nMaterials and Methods: We consecutively studi ed 562 participants including 357 healthy\, 155 pre-diabetes and 50 diabet es who underwent health survey. Pre-diabetes status was defined by impaire d fasting glucose or impaired glucose intolerance by American Diabetes Ass ociation guidelines. Pericardial (PCF) and thoracic peri-aortic (TAT) adip ose tissue was assessed by non-contrast 16-slice multi-detector computed t omography (MDCT) data set with off-line measure (Aquarius 3D Workstation\, TeraRecon\, San Mateo\, CA\, USA). Body fat composition (Tanita 305 Corpo ration\, Tokyo\, Japan)\, serum high-sensitivity C-reactive protein (Hs-CR P) level and insulin resistance (HOMA-IR) were all obtained.\nResults: Pat ients with diabetes and pre-diabetes had greater volume of PCF ( 89 ± 24. 6\, 85.3 ± 28.7 & 67.6 ± 26.7ml\, p\n\nhttp://indico.cern.ch/contributio nDisplay.py?contribId=40&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=40&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Compared Myocardial Deformation between Cardiovascular Magnetic Re sonance and Cardiac Computed Tomography DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-41@cern.ch DESCRIPTION:Speakers: Mr. LIN\, Yang-Hsien (Department of Biomedical Imagi ng and Radiological Sciences\, National Yang Ming University)\nIntroductio n: In the fields of heart failure diagnosis\, expect for the evaluation of heart valve abnormality\, the myocardial wall motion is another important indication which has been concluded in many studies. Cardiovascular magne tic resonance (CMR) imaging provides highly reproducible data of myocardia l deformation. Recently\, the cardiac computed tomography (CT) imaging tec hnique has become a new tool because of its advantages of good dynamic res olution\, low cost and breath hold not required.\nMaterials and Methods: I n this study\, we analyzed the wall motion of heart by using Optical Flow Method (OFM)\, and compared the correlation between CMR and Cardiac CT ima ging. The Cardiac CT scan was performed on the 64-slice DSCT scanner (Defi nition\, Siemens Medical Systems\, Forchheim\, Germany) with a gantry rota tion time of 330 ms. CMR was performed on a 3.0-T system (Achieva\, Philip s Medical Systems\, Best\, the Netherlands) using a 32-channel cardiac pha sed array receiver coil. \nResults: According to the analysis results of C ardiac CT and CMR\, the average wall motions between the diastole and syst ole phase in the left ventricle was 2.15±0.47 mm and 2.21±0.46 mm\, resp ectively. The regression equation between the Cardiac CT and CMR was y=0.0 6+1.00x with R2=0.83 and the correlation coefficient was 0.91\, which mean s the data were highly positively correlated.\nConclusion: Using OFM motio n estimate could accurately track myocardial deformation. The highly posit ive correlation between CMR and Cardiac CT images with OFM. Therefore\, th e Cardiac CT assessment myocardial motion may assist analysis in the diagn osis of heart failure.\nKey Words: Myocardial Deformation\, Cardiovascular magnetic resonance\, Cardiac computed tomography\, Optical Flow Method\n\ nhttp://indico.cern.ch/contributionDisplay.py?contribId=41&sessionId=15&co nfId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=41&sessionId=15 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Pixelated CdTe Detectors for Imaging X-rays on-board Solar Orbiter space mission DTSTART;VALUE=DATE-TIME:20120906T061000Z DTEND;VALUE=DATE-TIME:20120906T071000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-1@cern.ch DESCRIPTION:Speakers: BEDNARZIK\, Martin (Paul Scherrer Institut\, Laborat ory for Micro- and Nanotechnology\, 5232 Villigen PSI\, Switzerland)\nThe STIX (Spectrometer Telescope for Imaging X-rays) instrument will be used o n board the Solar Orbiter space mission to perform X-ray imaging and spect roscopy of solar flares. STIX is one of 10 instruments of the confirmed M- class mission of the European Space Agency (ESA) to be launched in 2017. T he imaging is realized by a Fourier-imaging technique using tungsten grid collimators in front of 32 pixelated CdTe detectors. Solar thermal and non -thermal hard X-ray emissions from 4 keV to 150 keV will be imaged with hi gh resolution (1 keV).\nCdTe detectors dedicated for STIX are 10x10x1 mm3 in size. 8 big pixels plus 4 small pixels arranged in an asymmetrical geom etrical configuration surrounded by a guard ring are read out with the Cal iste-SO ASIC module developed at CEA. The pixel effective areas range from 9.7 mm2 for the big and 1.0 mm2 for the small ones. The pixelization proc ess developed at the Laboratory for Micro- and Nanotechnology for the dete ctors purchased from Acrorad Co.\, Ltd Japan will be described. Our result s for leakage current measurements and spectral measurements obtained afte r the segmentation process are presented and discussed. For the selection of flight-quality detectors two setups were developed at PSI and ETH. The setup allows a serial and fast measurement of the leakage current of each individual pixel including guard ring. All measurements are carried out at different temperature levels. Since the detectors are very sensitive to m echanical shock (brittle\, increasing leakage current with decreasing spec tral performance) a protecting support is needed for handling the devices. Specially developed detector holders with electrical contact to the pixel s are used to ensure a safe transfer between two setups.\n\nhttp://indico. cern.ch/contributionDisplay.py?contribId=1&sessionId=15&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=1&sessionId=15& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:New fabrication and packaging technologies for CMOS pixel sensors: closing gap between hybrid and monolithic approach DTSTART;VALUE=DATE-TIME:20120906T024000Z DTEND;VALUE=DATE-TIME:20120906T030000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-5@cern.ch DESCRIPTION:Speakers: DULINSKI\, Wojciech (Institut Pluridisciplinaire Hub ert Curien (FR))\nMonolithic CMOS Pixels (MAPS) integrate on the same sil icon substrate the radiation sensor element with the processing electronic s. Their fabrication is possible through an easy access to commercial high -volume foundries\, resulting in low costs and high yield. However in the standard implementation these devices suffer from two major limitations. F irst\, only NMOS transistors are allowed on top of the active area. Second \, even high-resistivity substrate cannot be fully depleted because of vol tage limitation of CMOS transistors.\nIn order to overcome both limitation s\, we propose new CMOS fabrication procedures recently available for low- volume users. The first one (TowerJazz CIS) is a 180 nm process with high- resistivity epitaxial layer and quadruple well option. Two additional deep wells (implants) isolate electrically the substrate from standard shallow wells and allow for both types of transistors to be implemented. The seco nd process (ESPROS Photonics Corporation) is a 150 nm CMOS on bulk high re sistivity (detector quality) substrate\, insulated from transistor level b y deep implant (junction). Following front-end processing\, wafers are bac k-thinned to 50 microns\; back-contact is implemented and activated at low temperature. This is part of standard ESPROS foundry procedure\, no post- processing is required. Resulting structure allows not only for both types of transistors on top of the sensing area but also for full depletion (or even over depletion) of entire detector thickness. Results of charge coll ection efficiency and irradiation study of sensors from both manufacturers are presented. \nTotal thickness of monolithic CMOS sensors can be very s mall: typically 15 µm for active silicon and 5 µm for interconnections ( several metal-insulator layers). Therefor MAPS can be thinned down to less than 30 µm\, without loosing their tracking performance. This allows ver y small material budget and construction of non-planar (cylindrical) detec tor layers: thin silicon is quite flexible. In order to demonstrate feasib ility of large area\, ultra-light (\n\nhttp://indico.cern.ch/contributionD isplay.py?contribId=5&sessionId=7&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=5&sessionId=7&c onfId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Experience with 3D integration techniques in the framework of the ATLAS pixel upgrade for high luminosity LHC DTSTART;VALUE=DATE-TIME:20120905T010000Z DTEND;VALUE=DATE-TIME:20120905T012000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-9@cern.ch DESCRIPTION:Speakers: GONELLA\, Laura (Universitaet Bonn (DE))\nWith the p lanned upgrades of the LHC for higher than present luminosity\, the ATLAS pixel detector will be confronted to higher hit rate. R&D for the inner la yers of the future ATLAS pixel detector has started in the direction of sm aller feature size CMOS bulk processes\, as well as in the direction of th e new possibilities offered by 3D integration technologies. In this presen tation\, a report will be given on 2 different 3D integration techniques f or the future pixel readout IC which were followed by the ATLAS pixel coll aboration. The first one consists in the drilling of Through Silicon Via ( TSV) in a via first approach\, with the benefits associated to small aspec t ratio and the insertion of the TSV at the pixel level\, but also the tec hnical issues of a technology still presenting challenges for the industri al partners. The second one consists in the drilling of the TSV via-last\, with a potential for improved module concepts\, despite the somewhat coar ser technology and the associated reduction in via density. First results from both approaches are now available and will be discussed.\n\nhttp://in dico.cern.ch/contributionDisplay.py?contribId=9&sessionId=6&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=9&sessionId=6&c onfId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Results with p-type pixel sensors with different geometries for th e HL-LHC DTSTART;VALUE=DATE-TIME:20120907T015000Z DTEND;VALUE=DATE-TIME:20120907T021000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-77@cern.ch DESCRIPTION:Speakers: DERVAN\, Paul (Department of Physics-Oliver Lodge La boratory-University of Liv)\nPixel detectors will be extensively used for the four innermost layers of the upgraded ATLAS experiment at the future H igh Luminosity LHC (HL-LHC) at CERN. The total area of pixel sensors will be over 5 m2. The silicon sensors that will instrument the pixel volume wi ll have to face several technology challenges. They will have to withstand doses up to 2×1016 neq cm-2\, to have a reduced inactive area at the edg e of the sensors still being able to hold 1000V bias voltage and to be rel atively low cost considering the large area to be covered. N-side readout on p-type bulk is the most promising technology for satisfying the various requirements. Several sensor types have been produced in the UK\, conceiv ed for various readout systems\, for studying the properties of n-in-p and n-in-n sensors before and after irradiation with test beam and laboratory measurements. The status of these studies is here presented in term of ch arge collection efficiency and charge sharing performances.\n\nhttp://indi co.cern.ch/contributionDisplay.py?contribId=77&sessionId=10&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=77&sessionId=10 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Recent results on 3D double sided detectors at CNM-IMB DTSTART;VALUE=DATE-TIME:20120906T235000Z DTEND;VALUE=DATE-TIME:20120907T001000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-76@cern.ch DESCRIPTION:Speakers: PELLEGRINI\, Giulio (Instituto de Microelectrónica de Barcelona\, IMB-CNM-CSIC\, Barcelona\, Spain)\nThe upgrade of the LHC t o HL-LHC envisaged for 2020 requires silicon detectors of unprecedented ra diation tolerance for the silicon tracking detectors. The very high lumino sity foreseen (2.5 x 1034cm-2s-1) implies that the innermost layers detect ors\, at about 3 cm from the interaction point\, of the vertex detector wi ll be exposed to fluence up to 1.4x1016cm-2 1 MeV neutron equivalent for t he 2020 upgrade over the expected years of operation. Present vertex detec tors\, relying on highly segmented silicon sensors\, are designed to survi ve fast hadron fluence of about 1015cm-2. Under these conditions\, detecto r performance is limited since a large number of defects are introduced in to the device. During detector operation\, the charge carriers created by ionizing radiation are trapped into those defects with discrete energy lev els in the band-gap of the silicon substrate\, resulting in incomplete cha rge collection.\nSilicon detectors with cylindrical electrodes (so called 3D detectors) offer advantages over standard planar photodiodes as more ra diation hard radiation sensors. 3D detectors with the double sided geometr y have been fabricated at CNM clean room facilities. Different geometries including pixel detectors for high energy physics experiment and synchrotr on imaging \, short strip detectors with the same inter-column spacing as proposed for the ATLAS and CMS pixel detector upgrades foreseen for 2020. \nThe 3D detector is shown to have superior charge collection characterist ics even at the highest fluences even when compared to planar devices oper ating at 1000V\, which is in excess of that presently possible in the ATLA S experiment. Annealing studies of the collection efficiency and the main electrical characteristics of the detectors are also investigated. The exp erimental results are compared to the simulation of charge transport in th e devices.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=76&se ssionId=10&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=76&sessionId=10 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Single Event Effect Characterization of the Analog ASIC Developed for CCD Camera in Astronomical Use DTSTART;VALUE=DATE-TIME:20120906T045000Z DTEND;VALUE=DATE-TIME:20120906T051000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-74@cern.ch DESCRIPTION:Speakers: NAKAJIMA\, Hiroshi (Osaka University)\nSingle-event measurements on the analog ASIC developed for\nastronomical CCD camera sys tems are reported. The experiments\nusing several heavy ions and protons e xhibited positive correlation\nbetween the particle's LET (linear energy t ransfer) and the probability\nof the SEU (single event upset). The predict ive SEU rate in the low\nearth orbit was derived on the assumption of the CCD camera (SXI)\nonboard ASTRO-H\, the next Japanese X-ray astronomical s atellite.\nThe upper limit of the SEU rate of 4.6x10^-3 evts/sec is suffic iently\nlow compared with the non X-ray background of SXI. We also report\ non the radiation tolerance of our device against SEL (single event latch- up).\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=74&sessionI d=8&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=74&sessionId=8& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:3D Electronics for Tracking Triggers DTSTART;VALUE=DATE-TIME:20120905T004000Z DTEND;VALUE=DATE-TIME:20120905T010000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-73@cern.ch DESCRIPTION:Speakers: TRIMPL\, Marcel (Fermilab)\nWe describe our current efforts in sensor/electronics integration\, including 3D and SOI devices. Application of these technologies to track triggers for CMS and Atlas as well as x-ray imaging will be described. A central question is whether th ese technologies will be sufficiently affordable with high enough yield to build large area modules such as those required for CMS. We will discuss the development "active tiles" which combine 3D and active edge technolog ies as a possible solution to the yield problem. Such building blocks woul d enable the fabrication of fully active pixelated large area arrays.\n\nh ttp://indico.cern.ch/contributionDisplay.py?contribId=73&sessionId=6&confI d=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=73&sessionId=6& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Results of a Multi Project Wafer Process of Edgeless Silicon Pixel Detectors DTSTART;VALUE=DATE-TIME:20120907T003000Z DTEND;VALUE=DATE-TIME:20120907T005000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-72@cern.ch DESCRIPTION:Speakers: Dr. KALLIOPUSKA\, Juha (VTT)\nThe edgeless or active edge silicon pixel detectors have been gaining a lot of interest recently due to improved silicon processing and interconnection technology capabil ities. VTT has been one of the drivers of the edgeless process technology on 6" (150 mm) wafers. Last year we were able to gather 17 institutions an d industrial companies to join for a multi project wafer process of edgele ss silicon detectors. These participants come from different fields of app lications\, such as high energy physics\, X-ray imaging\, photon science a nd other medical and spatial applications. Their demands for the detector and design are very diverse and thus the process needed to be carefully de signed. In total\, 80 pieces of 150 mm wafers were processed to yield a gi ven number of detector variations. The fabricated detector thicknesses wer e 100\, 200\, 300 and 500 m. The polarities of the fabricated detectors on the given thicknesses were p-on-n\, n-on-n\, n-on-p and p-on-p. The wafer materials were high resistive Float Zone and Magnetic Czochralski silicon with crystal orientation.\n\nThe presentation gives and overview of the p rocess and statistically summarizes the electrical characteristics of the edgeless diodes with varied polarities. The characteristics include leakag e current\, breakdown voltage and capacitance-voltage measurements. The fi rst measurements have indicated reasonable leakage currents of 1-4 nA/cm2 at full depletion voltage. Pixel detector characterization results from nu mber of participants are presented with their permission. These include X- ray images\, charge collection efficiency and operation of the edgeless de tectors after heavy irradiation. Special focus is given on a new edgeless detectors designed for the Timepix and Medipix3 readout ASIC chips.\n\nhtt p://indico.cern.ch/contributionDisplay.py?contribId=72&sessionId=10&confId =137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=72&sessionId=10 &confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:64-pixel linear-array Si-APD detector for X-ray time-resolved expe riments DTSTART;VALUE=DATE-TIME:20120904T002000Z DTEND;VALUE=DATE-TIME:20120904T004000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-71@cern.ch DESCRIPTION:Speakers: Prof. KISHIMOTO\, Shunji (High Energy Accelerator Re search Organization)\nWe have developed a silicon avalanche-photodiode (Si -APD) array detector for time-resolved measurements using pulsed synchrotr on X-rays. The Si-APD detector had 64 pixels of a linear array\, where the pixel size was 100 μm by 200 μm with a 50-μm gap between pixels and a depleted thickness was 10 μm. The detector system was equipped with 64-ch annel front-end ASICs\, FPGAs and SiTCP (a network processor). The prototy pe system resolved a 10-ns interval of X-ray pulses at a count rate of > 1 0^7 cps per channel. The nanosecond response and the high count-rate prope rty are extremely valuable for time-resolved X-ray diffraction measurement s in pulsed synchrotron radiation. If a detector system can resolve a tim e interval of shorter than 2 ns\, the system will be very efficient for re cording an intensity- or position-change of X-ray diffraction spots in nan osecond-order period. We are now in progress of test for the 64-channel S i-APD array detector with synchrotron X-ray beam. The detail of the test r esults will be presented in the workshop.\n\nhttp://indico.cern.ch/contrib utionDisplay.py?contribId=71&sessionId=4&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=71&sessionId=4& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Towards third generation pixel readout chips DTSTART;VALUE=DATE-TIME:20120904T233000Z DTEND;VALUE=DATE-TIME:20120905T000000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-70@cern.ch DESCRIPTION:Speakers: GARCIA-SCIVERES\, Maurice (Lawrence Berkeley Nationa l Lab. (US))\nWe present concepts and prototyping results towards a third generation pixel readout chip. We consider the 130nm feature size FE-I4 ch ip\, in production for the ATLAS IBL upgrade\, to be a second generation c hip. A third generation chip would have to go significantly further. A pos sible direction is to make the IC so generic that different experiments ca n configure it to meet significantly different requirements\, without the need for everybody to develop their own ASIC. In terms of target technolog y\, a demonstrator 500-pixel matrix containing analog front ends only (no complex functionality)\, was designed and fabricated in 65nm CMOS and irra diated with protons in Dec. 2011 and May 2012. We present the design and m easurement results.\n\nhttp://indico.cern.ch/contributionDisplay.py?contri bId=70&sessionId=6&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=70&sessionId=6& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Microchannel cooling for the LHCb VELO Upgrade DTSTART;VALUE=DATE-TIME:20120906T073000Z DTEND;VALUE=DATE-TIME:20120906T075000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-79@cern.ch DESCRIPTION:Speakers: BUYTAERT\, Jan (CERN)\nLocal thermal management of d etector electronics through ultra-thin micro-structured silicon cooling pl ates is an extremely promising technique for HEP with wide potential appli cation in other fields. It combines a very high thermal efficiency with a very low addition of mass and space\, and suppresses all problems of CTE m ismatch between the heat source and he heat sink.\nTypical micro-fabricati on techniques such as photolithography\, etching\, wafer bonding and thinn ing are all involved in the process. The technique is very suited to the LHCb VELO upgrade\, where there is the challenge of constructing an effic ient cooling system which is radiation hard\, adds minimal material to the system\, and provides an excellent CTE match to the silicon sensing eleme nts and ASICs. The microchannel designs under development have to be spec ially adapated for the use of CO2 as the coolant\, with the additional cha llenges of thinner channels\, constrictions to allow an evaporative CO2 co oling process\, and the higher pressures involved. The numerical simula tions also have to be enhance to describe the turbulent flow within the ch annels. In addition to the design of the microchannels within the wafers themselves\, the connectivity has also to be adapted to cope with the high er pressures\, and to allow close packing of the forward silicon planes. A series of designs have already been prototyped and tested for LHCb. The challenges\, current status of the measurements\, and the solutions under development will be described.\n\nhttp://indico.cern.ch/contributionDispla y.py?contribId=79&sessionId=8&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=79&sessionId=8& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Monolithic Active Pixel Matrix with Binary Counters (MAMBO) ASIC\, using a nested well structure to decouple the detector from the electroni cs DTSTART;VALUE=DATE-TIME:20120906T002000Z DTEND;VALUE=DATE-TIME:20120906T004000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-78@cern.ch DESCRIPTION:Speakers: FAHIM KHALID\, Farah (Fermilab)\nMonolithic Active M atrix with Binary Counters (MAMBO) V ASIC has been designed for detecting and measuring low energy X-rays from 6-12keV. A nested well structure with a buried n-well (BNW) and a deeper buried p-well (BPW) is used to electri cally isolate the detector from the electronics. BNW acts as an AC ground to electrical signals and behaves as a shield. BPW creates a homogenous el ectric field in the entire detector volume. The ASIC consists of a matrix of 50×52 pixels\, each of 105x105µm2. Each pixel contains analogue funct ionality accomplished by a charge preamplifier\, CR-RC2 Shaper and a basel ine restorer. It also contains a window comparator with Upper and Lower th resholds which can be individually trimmed by 4 bit DACs to remove systema tic offsets. The hits are registered by a 12 bit counter which is reconfig ured as a shift register to serially output the data from the entire ASIC. Test results indicate good analogue and digital performance.\n\nhttp://in dico.cern.ch/contributionDisplay.py?contribId=78&sessionId=7&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=78&sessionId=7& confId=137337 END:VEVENT BEGIN:VEVENT SUMMARY:Development of neutron two-dimensional position detector systems b y using MPPC DTSTART;VALUE=DATE-TIME:20120904T062000Z DTEND;VALUE=DATE-TIME:20120904T072000Z DTSTAMP;VALUE=DATE-TIME:20130618T232732Z UID:indico-contribution-137337-47@cern.ch DESCRIPTION:Speakers: Mr. SATOH\, Setsuo (KEK)\nKEK KENS-DAQ group is deve loping several neutron detectors and readout systems. 2 systems are develo ped by using a ZnS/6LiF neutron scintillator and MPPC (Multi Pixel Photon Counter: a semiconductor light sensor).\nOne is named M-PSD (MPPC position -sensitive detector) which uses charge-division method like the 3He-PSD [1 \,2]. Therefore a NEUNET (neutron network) system [1] which is widely used in the J-PARC (Japan Proton Accelerator Research Complex) can be used for its readout system. A 2-dimensional detector which consists of 21 M-PSD b oards at intervals of 5 mm. The detection area of the detector is 128 × 1 05 mm2. Each board has 32 MPPCs at intervals of 4 mm\, and the spatial res olution is about 1mm.\nThe other is named MHPD (MPPC high count pixel dete ctor) which processes data at each MPPC independently to obtain high count rate.\nWe will present the latest development of the detector systems.\n\ nReferences\n[1] S. Satoh\, S. Muto\, N. Kaneko\, T. Uchida\, M. Tanaka\, Y. Yasu\, K. Nakayoshi\, E. Inoue\, H. Sendai\, T. Nakatani\, and T. Otomo \, NIM A 600(2009)103-106.\n[2] S. Satoh\, T. Ino\, and M. Furusaka\, Y. K iyanagi\, N. Sakamoto\, K. Sakai\, NIMA529(2004) 421-424.\n\nhttp://indico .cern.ch/contributionDisplay.py?contribId=47&sessionId=14&confId=137337 LOCATION:Hotel Listel Inawashiro\, Inawashiro\, Japan URL:http://indico.cern.ch/contributionDisplay.py?contribId=47&sessionId=14 &confId=137337 END:VEVENT END:VCALENDAR