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SUMMARY:MCM-D Technology for Silicon Strip Frontend Hybrids
DTSTART;VALUE=DATE-TIME:20120504T073000Z
DTEND;VALUE=DATE-TIME:20120504T080000Z
DTSTAMP;VALUE=DATE-TIME:20130518T114523Z
UID:indico-contribution-18@cern.ch
DESCRIPTION:Speakers: EKLUND\, Lars (University of Glasgow (GB))\nMulti-ch
 ip Modules - Deposited (MCM-D) technology can be applied to\nsilicon strip
  modules and promises advantages in terms of integration\ncomplexity and m
 aterial budget. The principle is to deposit\nalternating dielectric and me
 tal layers directly on the silicon\nsensor\, building up a PCB like struct
 ure. With lithographic techniques\ntraces and vias are etched with high re
 solution creating a circuit\nreplacing the pitch adaptor\, wire bonds and 
 electronics hybrid. \n\nThis paper reports on a feasibility study performe
 d in the context of\nthe Atlas Upgrade. The technology was evaluated in tw
 o prototype\nprocessing runs. The first prototypes had a single dielectric
  and\nmetal layer deposited on a silicon strip sensor\, with the purpose o
 f\nevaluating the change in performance due to the post-processing and\nth
 e presence of a ground plane. Sensor parameters were measured before\nand 
 after irradiation up to 10^16 n_eq/cm^2 and charge collection\nefficiency 
 was measured for several doses. A non-irradiated sensor was\nmeasured in a
  beam test yielding signal height and resolution for\nregions with and wit
 hout ground plane. The second prototype was a fully\nfunctional 20-chip fr
 ont-end hybrid with five metal layers build on a\nblank silicon sensor. Th
 e hybrid has the same performance as an\nidentical circuit built in kapton
  technology.\n\nhttp://indico.cern.ch/contributionDisplay.py?contribId=18&
 sessionId=2&confId=154525
LOCATION:INFN Pisa
URL:http://indico.cern.ch/contributionDisplay.py?contribId=18&sessionId=2&
 confId=154525
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