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SUMMARY:Performance of Silicon n-in-p Pixel Detectors irradiated up to 5E1
 5 n eq. /cm**2 for the future ATLAS Upgrades
DTSTART;VALUE=DATE-TIME:20110609T200000Z
DTEND;VALUE=DATE-TIME:20110609T202000Z
DTSTAMP;VALUE=DATE-TIME:20130522T131156Z
UID:indico-contribution-33@cern.ch
DESCRIPTION:Speakers: Dr. MACCHIOLO\, Anna (Max-Planck-Institut fuer Physi
 k)\nWe present the results of the characterization of novel n-in-p planar 
 pixel detectors\, designed for the future upgrades of the  ATLAS pixel sys
 tem. N-in-p silicon devices are a promising candidate to replace the n-in-
 n sensors  thanks to their radiation hardness and cost effectiveness\, tha
 t could allow for an increased pixel instrumented area at larger radius.\n
 The n-in-p modules presented here are composed of pixel sensors produced b
 y CiS (Germany) connected with bump-bonding to the FE-I3 ATLAS readout chi
 p. Differently than for the n-in-n technology\, the n-in-p pixel sensors\,
  285 microns thick\, are characterized by a guard-ring structure implement
 ed on the front-side\, avoiding the necessity of a double-side process.  A
 n additional passivation layer of Benzocyclobutene (BCB) has been applied 
 on the sensor surface to prevent sparks between the sensor edges\, at high
  voltage\, and the chip\, kept at ground\, facing each other at a distance
  of about 25 microns.\nThe characterization of these devices has been perf
 ormed with the ATLAS pixel read-out systems\, TurboDAQ  and USBPIX\, befor
 e and after irradiation with 24 GeV/c protons and neutrons up to a fluence
  of 5E15 n eq. /cm**2. The CCE measurements carried out with radioactive s
 ources have proven the feasibility of employing this kind of detectors up 
 to these particle fluences. The collected charge has been measured to be a
 lways in excess of twice the value of the FE-I3 threshold\, tuned to 3200 
 e-. In particular\, pixel detectors irradiated at a fluence of 5E15  n eq.
  /cm**2 yield a charge of 8000 e- at a bias voltage of 800V. \nThe analysi
 s of the data from a beam test with pions at CERN-SPS\, also presented\,  
 yield high tracking efficiency of these devices before and after irradiati
 on.   \nA new pixel production at CiS is in preparation for sensors compat
 ible with the new ATLAS FE-I4 chip and reduced thickness (down to 150 micr
 ons) to investigate the radiation hardness of thinner detectors at HL-LHC 
 (High Lumi HLC) fluences.\n\nhttp://indico.cern.ch/contributionDisplay.py?
 contribId=33&sessionId=22&confId=102998
LOCATION:Sheraton Hotel Chicago Ballroom 10
URL:http://indico.cern.ch/contributionDisplay.py?contribId=33&sessionId=22
 &confId=102998
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