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<event>
<ID>172231</ID>
<category>Radio-Frequency</category>
<parentProtection>false</parentProtection>
<materialList>[["minutes", "Minutes"], ["notes", "Notes"], ["paper", "Paper"], ["poster", "Poster"], ["slides", "Slides"], ["summary", "Summary"]]</materialList>
<announcer>
 <user>
  <title></title>
  <name first="Lionel" middle="" last="Dieu"></name>
  <organization></organization>
  <email>lionel.dieu@cern.ch</email>
  <userid>47695</userid>
 </user>
</announcer>
<supportEmail caption="Support">daniel.valuch@cern.ch</supportEmail>
<keywords>
 <keyword>High power RF, Radio-frequency, klystron, tetrode, diacrode, solid-state, high-voltage power supply, high-voltage modulator, RF power coupler, tuner, RF accelerating cavity</keyword>
</keywords>
<title>Seventh CW and High Average Power RF Workshop</title>
<description>The Seventh CW and High Average Power RF Workshop will be hosted by Brookhaven National Laboratory.&lt;br /&gt;
&lt;br /&gt;
&lt;div&gt;
	Register to CWRF12 through the &lt;a href="http://www.bnl.gov/cwrf2012/"&gt;BNL workshop site&lt;/a&gt;.&lt;/div&gt;
&lt;div&gt;
	&amp;nbsp;&lt;/div&gt;
</description>
<participants></participants>
<closed>False</closed>
<location>
 <name>Danfords Hotel &amp; Marina</name>
 <address>Port Jefferson, New York, USA</address>
 <room></room>
</location>
<startDate>2012-05-07T19:00:00</startDate>
<endDate>2012-05-11T13:30:00</endDate>
<creationDate>2012-01-13T04:23:54</creationDate>
<modificationDate>2012-05-08T11:49:49</modificationDate>
<timezone>EST</timezone>
<chair>
 <user>
  <title>Mr.</title>
  <name first="James" middle="" last="Rose"></name>
  <organization>Brookhaven</organization>
  <email>rose@bnl.gov</email>
 </user>
</chair>
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 <ID>16</ID>
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 <materialList>[["minutes", "Minutes"], ["notes", "Notes"], ["paper", "Paper"], ["poster", "Poster"], ["slides", "Slides"], ["summary", "Summary"]]</materialList>
 <title>Evolution of High Power LDMOS Transistors at NXP</title>
 <speakers>
  <user>
   <title></title>
   <name first="Scott" middle="" last="Blum"></name>
   <organization>N</organization>
   <email>scott.blum@nxp.com</email>
  </user>
 </speakers>
 <primaryAuthors>
  <user>
   <title></title>
   <name first="Scott" middle="" last="Blum"></name>
   <organization>N</organization>
   <email>scott.blum@nxp.com</email>
  </user>
 </primaryAuthors>
 <location>
  <name>Danfords Hotel &amp; Marina</name>
  <address>Port Jefferson, New York, USA</address>
  <room></room>
 </location>
 <startDate>2012-05-09T08:00:00</startDate>
 <endDate>2012-05-09T08:45:00</endDate>
 <duration>00:45</duration>
 <abstract>This presentation will discuss the evolution of high power transistors at NXP Semiconductors.  It will focus on the technology specific to the frequency bands most utilized by the accelerator community.  It will show the improvements in performance, and what those improvements can bring to the design community.  Finally, future roadmaps will be shown.  This will be a platform to start discussions with the design community about what trends can most help them leverage solid state technology for their amplifier needs in the future.</abstract>
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  <ID>slides</ID>
  <title>Slides</title>
  <description></description>
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    <name>other</name>
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    <name>link</name>
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 </material>
</contribution>
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  <todayReference>2013-05-23</todayReference>
  <tomorrowReference>2013-05-24</tomorrowReference>
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