17-19 November 2010
CERN
Europe/Zurich timezone
- michael.moll@cern.ch
Support
Properties of a new series of Hamamatsu Si diodes
Presented by Prof. Juozas VAITKUS
on
17 Nov 2010
from
14:50
to
15:10
Session:
Defect and Material Characterization
Content
A new series of diodes FZ-Si (Hamamatsu) investigated by: 1) a standar technique (I(V) and C(V)); 2) by microwave photoconductivity decay measurement; 3) the response on the linear front bias pulse technique (BELIV); 4) the photoconductivity specra in the extrinsic region. Measurements performed at room a tat low temperature. The results are compared with the similar measurements in other supplier and in irradiated samples.
Place
Location: CERN
Room: Council Chamber
Co-authors
- Dr. Eugenijus GAUBAS Vilnius University
- Prof. Vaidotas KAZUKAUSKAS Vilnius University
- Mr. Neimantas VAINORIUS Vilnius University
- Mr. Tomas CEPONIS Vilnius University
Event calendar file