17-19 November 2010
CERN
Europe/Zurich timezone
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Properties of a new series of Hamamatsu Si diodes

Presented by Prof. Juozas VAITKUS on 17 Nov 2010 from 14:50 to 15:10

Content

A new series of diodes FZ-Si (Hamamatsu) investigated by: 1) a standar technique (I(V) and C(V)); 2) by microwave photoconductivity decay measurement; 3) the response on the linear front bias pulse technique (BELIV); 4) the photoconductivity specra in the extrinsic region. Measurements performed at room a tat low temperature. The results are compared with the similar measurements in other supplier and in irradiated samples.

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Location: CERN

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