7-11 May 2012
Danfords Hotel & Marina
EST timezone
- daniel.valuch@cern.ch
Support
Evolution of High Power LDMOS Transistors at NXP
Presented by Scott BLUM
on
9 May 2012
from
08:00
to
08:45
Session:
Session 3, hot topic, SSA
Content
This presentation will discuss the evolution of high power transistors at NXP Semiconductors. It will focus on the technology specific to the frequency bands most utilized by the accelerator community. It will show the improvements in performance, and what those improvements can bring to the design community. Finally, future roadmaps will be shown. This will be a platform to start discussions with the design community about what trends can most help them leverage solid state technology for their amplifier needs in the future.
Place
Location: Danfords Hotel & Marina
Address: Port Jefferson, New York, USA
Room:
Event calendar file