Event calendar file
17-19 November 2010
CERN
Europe/Zurich timezone
- michael.moll@cern.ch
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Session:
3D sensors
In this talk we present the latest results from the development of double sided,double type column 3D detectors with full passing columns at FBK.
The main issues related to the fabrication process and preliminary results from the electrical characterization of several test devices will be discussed.
Presented by Gabriele GIACOMINI, Elisa VIANELLO
on
18 Nov 2010
at
16:20
Session:
3D sensors
3D Silicon sensors fabricated at FBK-irst with Double-side Double Type Column approch and columnar electrodes only partially etched through p-type subtrates have been irradiated and tested in laboratory and with 120 GeV pion beam at CERN SPS. We will present an overview of recent results from laboratory tests obtained with devices irradiated with protons and neutrons up to 5x1015 neq/cm2.
Presented by Mr. Andrea MICELLI
on
18 Nov 2010
at
16:40
A novel microstrip sensor with polysilicon electrodes manufactured at CNM-IMB is introduced. The slightly resistive electrodes allows the determination of the particle's hit position along the microstrip direction using a charge-division-based readout. Preliminary results from laser, radioactive source and test beam characterization are given.
Presented by Dr. Ivan VILA ALVAREZ
on
18 Nov 2010
at
13:40
Silicon strip detector modules that are used in tracker systems of high energy physics experiments consists of readout hybrid board, the sensor itself and pitch adapter (PA) in between hybrid and sensor. Modern strip detectors are almost exclusively AC-coupled because of high leakage current due to the harsh radiation environment. The AC-coupling requires resistive isolation of implanted strips fr
... More
Presented by Jasu HAERKOENEN
on
18 Nov 2010
at
11:10
HPK FZ p-on-n ministrip detectors, of the type currently used in several LHC experiments, have been irradiated both with protons and neutrons to equivalent fluences of 1e15 n/cm^2. The detectors have then been characterized with beta CCE measurements based on the ALIBAVA system throughout several annealing steps, to assess the effect on the performances of the detectors of hypothetical long shutdo
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Presented by Mr. Christopher LUCAS
on
18 Nov 2010
at
09:40
Session:
Defect and Material Characterization
The radiation damage effects on p- and n-type Float Zone (FZ) and Magnetic Czochralski (MCz) Silicon diodes were characterized by studying the capacitance and depletion voltage. The diodes were exposed to 800 MeV protons
to fluences up to $1.5x10^{15}$ p/cm^2. The diodes were then annealed at 60 °C and measured at various intervals up to 1,000 minutes. The intent of this study is to understand
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Presented by Dr. Konstantin TOMS
on
17 Nov 2010
at
15:10
Miniature p-type strip detectors were irradiated with reactor neutrons to fluences in the range from 2e14 neq/cm2 to 5e15 neq/cm2. Collected charge was measured with signals caused by fast electrons from Sr90 source and read out by SCT128A chip. Collected charge and leakage current was measured up to high bias voltages (1400 V) at which signs of charge multiplication can be observed. Detectors w
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Presented by Igor MANDIC
on
18 Nov 2010
at
09:00
With the fully operational ALiBaVa setup at Karlsruhe an annealing study of a standard CMS mini sensor (FZ, n-type) was performed. The chosen fluence of 7.5e14 Neq/cm2 lies well above expectation for strip sensors after 300fb-1 at LHC and allows exploring the performance at even higher fluence, e.g. due to higher integrated luminosity before replacement of the strip Tracker or as material for S-LH
... More
Presented by Robert EBER
on
18 Nov 2010
at
10:00
Silicon n-in-p pixel detectors from the latest CiS production are detectors similar to ones from the latest ATLAS pixel production.
First measurements of irradiated CiS n-in-p single chip assemblies (SCA) connected to the current ATLAS front end chip FE-I3 were performed during the last weeks. Characterization results will be presented from devices irradiated with protons and neutrons up to fluen
... More
Presented by Christian GALLRAPP
on
18 Nov 2010
at
14:00
Session:
3D sensors
Double-sided 3D silicon strip detectors, manufactured by CNM on p-type and n-type substrate, were measured after irradiation with sLHC strip- and pixel fluences. The device irradiations were performed at the proton cyclotron in Karlsruhe with 25 MeV protons. Results of measurements with a beta source and an infrared laser will be shown. After a radiation fluence of 2E16 n_eq/cm^2, the highest flue
... More
Presented by Michael KOEHLER
on
18 Nov 2010
at
17:00
Session:
Defect and Material Characterization
Presented by Prof. Mara BRUZZI, Eckhart FRETWURST
on
17 Nov 2010
at
16:20
Presented by Gregor KRAMBERGER, Gianluigi CASSE
on
18 Nov 2010
at
15:00
HPK p-type sensor was irradiated in steps with reactor neutrons up to the fluence of 1e16 cm-2. After each step several Edge-TCT measurements were performed during initial stage of annealing. Charge collection properties, drift velocity profiles were investigated as a function of annealing, fluence and bias voltage.
Presented by Gregor KRAMBERGER
on
18 Nov 2010
at
10:20
The project aims to fabricate and fully characterize p-type strip detectors with trench electrodes to enhance the charge multiplication effect in the irradiated devices.
Presented by Dr. Giulio PELLEGRINI
on
18 Nov 2010
at
11:30
ATLAS SingleChip-Assemblies based on the FE-I3 readout chip have been irradiated with reactor neutrons in Ljubljana to fluences up to 2E16 neq/cm^2. First measurements obtained with a Sr-90 source in the lab will be presented. The collected charge will also be compared to preliminary testbeam results.
Presented by Daniel MUENSTERMANN
on
18 Nov 2010
at
14:20
We checked the effectiveness of PTP structures against large deposits of ionization in the detector bulk using an IR laser, and compared it with the results of commonly used DC i-V measurements.
Presented by Prof. Hartmut SADROZINSKI
on
18 Nov 2010
at
11:50
Session:
Defect and Material Characterization
This work deals with the bistable con gurations of the E4/E5-defect levels, which are known to be the important current generator after neutrons and charged hadrons irradiation. We studied 300 um thick n-type diodes made from MCz and FZ-silicon after irradiation with reactor neutrons. Capacitance-Deep Level Transient Spectroscopy (C-DLTS) as well as Capacitance- Voltage and Current-Voltage charact
... More
Presented by Alexandra JUNKES
on
17 Nov 2010
at
14:10
Session:
Defect and Material Characterization
Photoluminescence (PL) and infrared absorption (IRA) techniques have been applied to study defect centers formed in MCz and FZ by high-fluence neutron irradiation. The MCz-Si and FZ-Si samples prepared by the WODEAN group were irradiated with neutron fluences ranging from 1x10^14 to 3x10^16 cm^-2. The studies were performed in a temperature range of 13 K–100 K using both the as-irradiated and
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Presented by Barbara SURMA
on
17 Nov 2010
at
13:50
Session:
Defect and Material Characterization
A new series of diodes FZ-Si (Hamamatsu) investigated by: 1) a standar technique (I(V) and C(V)); 2) by microwave photoconductivity decay measurement; 3) the response on the linear front bias pulse technique (BELIV); 4) the photoconductivity specra in the extrinsic region. Measurements performed at room a tat low temperature. The results are compared with the similar measurements in other supplier
... More
Presented by Prof. Juozas VAITKUS
on
17 Nov 2010
at
14:50
Session:
Defect and Material Characterization
The high concentration of radiation induced defects in the detector bulk is the key factor of detector parameters stabilization at very high biase voltage. In this presentation the effect of deep levels on the detector reverse current is considered and the calculated I-V characteristics are compared with the experimental ones.
Presented by Vladimir EREMIN
on
17 Nov 2010
at
16:00
Set of annealing measurements taken after ~ 200 days annealing at room temperature
Presented by Dr. Gianluigi CASSE
on
18 Nov 2010
at
09:20
Session:
3D sensors
I will report on the fabrication of new 3D detectors devices for the Atlas 3D collaboration and other CERN experiments.
Presented by Dr. Giulio PELLEGRINI
on
18 Nov 2010
at
16:00
Session:
Defect and Material Characterization
The TCAD Synopsis program was used for: 1) investigation of electric field distribution in Si crystal containing different types and concentration of clusters; 2) analysis of dynamics of electric field around the cluster during and after excitation by a short light pulse. An aim of presentation is an attraction of proposals to model the behavior of semiconductor in other situations.
Presented by Prof. Juozas VAITKUS
on
17 Nov 2010
at
14:30
Session:
3D sensors
An n-type double-sided 3D detector fabricated at CNM bump bonded to a Timepix chip has been tested in a pion and a micro-focused x-ray test beams. The resulst from both test beams will be shown. The x-ray test beam shows relative detection maps of the 3D pixel device.
The pion test beam results show the absolute detection efficiency, cluster size and resolution for detectors with particles at a
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Presented by Chris PARKS
on
18 Nov 2010
at
17:20
A report on the development of a high resolution particle tracking telescope based on the Timepix pixel detector. Using the different modes of operation available in Timepix a Telescope system has been developed that can provide a spatial resolution of under 2 microns and a timing resolution to the order of a nanosecond. This track time tagging ability has been used to incorporate an LHCb/Beetle
... More
Presented by Richard PLACKETT
on
18 Nov 2010
at
14:40
