Event calendar file
from 29 February 2012 to 2 March 2012 (Europe/Zurich)
Jozef Stefan Institute
Europe/Zurich timezone
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33
Session:
Running experiments and upgrades
The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC.
The SCT is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The mod
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Presented by Per Daniel Conny JOHANSSON
on
29 Feb 2012
at
09:30
Session:
3D Detectors
We performed edge and surface TCT measurements of a double sided 3D silicon strip detector at the Jozef Stefan Institute. Double sided 3D devices are a useful counterpart to traditional planar devices. The TCT techniques allow the electric fields in 3D devices to be probed in a way not possible before.
The strip detectors had a substrate thickness of 300 micrometers and a strip pitch of 80 mi
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Presented by Graeme Douglas STEWART
on
1 Mar 2012
at
15:20
Session:
Running experiments and upgrades
The CMS experiment is equipped with a 3 layer pixel detector for track seeding and vertexing. The talk gives a short description of the detector and its performance. During 2011 first radiation induced changes of the modules became noticable. This concerns the leakage current of the sensors, and the full depletion voltage, but also some parameters of the readout electronics.
It is planned to re
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Presented by Tilman ROHE
on
29 Feb 2012
at
14:55
Session:
Planar Detectors
The n-in-p silicon technology is a promising candidate for the foreseen upgrade steps of the ATLAS Pixel Detector towards HL-LHC. Due to the radiation hardness and cost effectiveness of this technology, it permits to increase the area covered by pixel detectors.
Characterization and performance results of n-in-p planar pixel sensors produced by CiS (Germany) connected via bump bonding to the ATL
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Presented by Christian GALLRAPP
on
29 Feb 2012
at
15:45
Session:
Running experiments and upgrades
The VELO is the silicon detector surrounding the LHCb interaction point. The sensors have an inner radius of only 7mm from the LHC beam and an outer radius of 42 mm. Consequently the sensors receive a large and non-uniform radiation dose. A dose of 0.5 x 10^13 1 MeV neutron equivalents /cm^2 per fb^-1 of data is predicted at the tip of the sensors. The sensors are fabricated from oxygenated n-on
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Presented by Chris PARKES, David HUTCHCROFT
on
29 Feb 2012
at
11:10
Session:
Slim/Active edges
The foreseen luminosity-upgrades for the LHC pose severe constraints on the future ATLAS silicon tracker. The innermost layer of the new pixel system will have to withstand a total integrated fluence in excess of 1x10^16 neq/cm2. Moreover, there are geometrical requirements that pose stringent limits on the layout of the new pixel modules, both in terms of thickness and of insensitive-region size
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Presented by Gabriele GIACOMINI
on
1 Mar 2012
at
16:15
Session:
Planar Detectors
We have been developing highly radiation-tolerant n(+)-in-p silicon planar pixel and microsrip sensors for use in the high-luminosity LHC. Novel n(+)-in-p pixel sensors were made using a combinations of the bias structure of punch-through or polysilicon resistor, the isolation structure of p-stop or p-spray, and the thickness of 320 $\mu$m or 150 $\mu$m.
The strip sensors and associated test str
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Presented by Yoshinobu UNNO
on
29 Feb 2012
at
15:20
Session:
Applications and other technologies
I will describe the systems in CMS that are based on the use of diamond sensors. These include the Beam Conditions Monitor that is part of the CMS safety system and the Pixel Luminosity Telescope a dedicated luminosity monitor that has recently been installed for a pilot run this year. I will briefly describe each system, show the latest data, and conclude with plans for the upcoming run and for t
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Presented by Dmitry HITS
on
2 Mar 2012
at
11:20
Session:
3D Detectors
For the ATLAS upgrade, the inner pixel layers will have to withstand fluences of up to 2E16 1MeV neq/cm^2. 3D detectors have been shown to be very radiation tolerant, and have been proposed as an option for the inner pixel layers for the ATLAS upgrade. This work presents studies done on double sided 3D strip detectors. Charge collection and noise measurements are presented before and after irradia
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Presented by Christopher BETANCOURT
on
29 Feb 2012
at
17:10
Session:
Planar Detectors
Effects of long term annealing on charge collection properties of miniature p-type micro-strip detectors, 300 and 150 μm in thickness, irradiated to fluences of 1016 and 5•1015 neq/cm2 with reactor neutrons respectively, were examined by using the Transient Current Technique with Edge-on laser injection (Edge-TCT). The detectors were annealed at 60ºC in steps to an accumulated time of 10240 mi
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Presented by Marko MILOVANOVIC
on
1 Mar 2012
at
09:55
Session:
Planar Detectors
ATLAS plans a full replacement of its inner tracker after the end of this decade to cope with luminosities of up to 10E35
cm-2 s-1 at HLLHC. Here, the innermost pixel layer will have to withstand a radiation damage of 2E16 n_eq cm-2.
During the last three years lab characterisation of n+-in-n sensors highly irradiated with neutrons and protons as well as several test beam campaigns were conduc
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Presented by Mr. Andre RUMMLER
on
1 Mar 2012
at
11:35
Session:
Running experiments and upgrades
The upgrades for the ATLAS Pixel Detector will be staged in preparation for high luminosity LHC. The first upgrade for the Pixel Detector will be the construction of a new pixel layer which will be installed during the first shutdown of the LHC machine, foreseen in 2013-14. The new detector, called the Insertable B-layer (IBL), will be installed between the existing Pixel Detector and a new, smal
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Presented by Christian GALLRAPP
on
29 Feb 2012
at
11:35
Session:
3D Detectors
3D Silicon Pixel sensors fabricated at FBK-irst and at CNM with Double-side Double Type Column approach with full pass through columns electrodes have been irradiated and tested in laboratory.
We will present an overview of the recent results from laboratory tests obtained with devices non irradiated and irradiated with protons up to 5x10^15 neq/cm^2
Presented by Andrea MICELLI
on
1 Mar 2012
at
14:55
Session:
Running experiments and upgrades
ATLAS plans a first major upgrade of its pixel detector on the path to HL-LHC in form of the IBL: The insertion of a 4th pixel layer (Insertable B-Layer) is currently being prepared for 2013. This will enable the ATLAS tracker to cope with an increase of LHC's peak luminosity to about 3E34 cm-2 s-1 which requires a radiation hardness of the sensors of up to 5E15 n_eq cm-2.
As part of their qual
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Presented by Daniel MUENSTERMANN
on
29 Feb 2012
at
12:00
Session:
Applications and other technologies
The development of new radiation detectors of different semiconductor materials (Si, CdTe, GaAs, ...) brings the necessity to test and evaluate their response and detection performance such as the spatial homogeneity and local charge collection efficiency. Similarly, such testing is desired as well in order to evaluate the extent of radiation damage in detectors. We built a detector scanning syste
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Presented by Jan JAKUBEK
on
2 Mar 2012
at
12:10
Session:
Running experiments and upgrades
this talk will report an overview on the developement of 3D silicon sensors for the ATLAS IBL. The experience of qualifying, producing and testing 3D sensors compatible with the FE-I4 pixel readout electronic chip will be discussed together with an indication of the future perspectives on the use of micromachining in radiation detection.
Presented by Dr. Cinzia DA VIA
on
29 Feb 2012
at
14:30
Session:
Planar Detectors
While CMOS processes are cost-efficient and commercially available, they have not yet been used to produce radiation-hard sensors. So-called HV CMOS processes combine a slightly higher resistivity p-type substrate with deep n-wells and allow the combination of a drift-based electron-collecting sensor with active cuircit components while keeping a fill factor of 100%. Achievable depletion depths ar
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Presented by Daniel MUENSTERMANN
on
1 Mar 2012
at
12:25
Session:
Planar Detectors
We have executed a beam test of n-in-p silicon strip sensors aimed for the High Luminosity LHC(HL-LHC) upgrade of the ATLAS SCT(Semi-Conductor Tracker), in Dec. 2011 at Reseach Center for Nuclear Physics (RCNP). The data acquistion system was made of (1) the ABCN chip with a new readout system using an universal read-out board called “SEABAS" and (2) a beam defining telescope with VME readout m
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Presented by Takuya KISHIDA
on
1 Mar 2012
at
09:30
Session:
Applications and other technologies
Since Dec 2011, GridPix chips (TimePix + Protection Layer + InGrid) can
be produced commercially for a reasonable price.
New applications of GridPix trackers are presented: a LVL1 trigger for the LHC experiments, and new TPCs.
Presented by Harry VAN DER GRAAF
Session:
3D Detectors
Silicon detectors with cylindrical electrodes (so called 3D detectors) offer advantages over standard planar photodiodes as more radiation hard radiation sensors. 3D detectors with the double sided geometry have been fabricated at IMB-CNM clean room facilities. The layouts will fit the new pixelated readout chip FE-I4 developed by Atlas collaboration.
The technology and the electrical measurement
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Presented by Giulio PELLEGRINI
on
1 Mar 2012
at
14:30
Session:
3D Detectors
We report on the main technological issues related to the optimization of double side 3D detectors for the first production for ATLAS IBL at FBK (Trento, Italy). With respect to the previous versions of this technology we have strongly improved the main electrical properties (i.e. leakage current and breakdown voltage), the yield and the reproducibility. Selected results from the electrical charac
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Presented by Maurizio BOSCARDIN
on
29 Feb 2012
at
16:45
Session:
3D Detectors
Surface effects were found to significantly affect the electrical characteristics of double-sided 3D detectors fabricated at FBK.
With reference to 3D test diodes, we have studied the layout dependence of some critical parameters such as leakage current, breakdown voltage and capacitance both experimentally and with the aid of TCAD simulations.
Simulations are found to accurately reproduce the
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Presented by Prof. Gian-Franco DALLA BETTA
on
29 Feb 2012
at
17:35
Session:
Planar Detectors
A survey of recent activities concerning the edge-TCT measurements and analysis at CERN will be presented. The first part of the talk is focused on annealing study of FZ and MCz strip detectors irradiated with 24GeV/c protons to fluence of 1e16p/cm2. In the second part of this talk two methods are proposed to extract the trapping time profiles from edge-TCT measurements. The first method is based
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Presented by Irena DOLENC KITTELMANN
on
1 Mar 2012
at
10:20
Session:
Applications and other technologies
Luminosity monitors, beam monitors and tracking detectors of the experiments at the Large Hadron Collider and their upgrades must be able to operate in radiation environments several orders of magnitude harsher than those of any current detector. We have observed in ATLAS that as the environment becomes harsher detectors not segmented, either spatially or in time, have difficulty handling the sepa
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Presented by Andrej GORISEK
on
2 Mar 2012
at
11:45
Session:
Applications and other technologies
We propose a new tracker which is based on the electron multiplier of the Tipsy single soft photon detector.
The electron multiplier consists of a stack of transmissive dynodes, placed on top of a pixel chip. Above this, an Electron Emission Membrane is placed, which has the property to emit, with a high probability, at least one electron at the point of passage of a MIP crossing the membrane.
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Presented by Harry VAN DER GRAAF
Session:
Planar Detectors
In the presentation the results of charge collection measurements with SCT128 chip with HPK mini-strip detector will be shown. First the results with sensor irradiated with pions at PSI and later with neutrons in Ljubljana will be presented. In the second part of the talk the measurements of changes of collected charge and detector current with time will be shown. The detector irradiated with pi
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Presented by Igor MANDIC
on
1 Mar 2012
at
11:10
