The concept of using deep-submicron HV-CMOS and/or imaging processes to produce a drop-in replacement for radiation-hard silicon sensors is explored. Such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a readout chip. This approach yields most advantages of MAPS, without the complication of full integration on a single chip. After outlining the basic concept and the design of recent test ASICs, characterization results after irradiation up to 1e16 neq/cm2 and 1GRad will be presented, and future plans with active sensors for the ATLAS Upgrade will be discussed.
