Dr
Leonard Spiegel
(Fermi National Accelerator Laboratory (FNAL))
17/02/2010, 16:30
Contributed Talk
With an expected ten-fold increase in luminosity, the radiation environment in S-LHC tracking volumes will be considerably harsher for silicon-based detectors. Since 2007, a collaboration of CMS institutes has been exploring the use of Magnetic Czochralski (MCz) silicon as a detector element for the strip tracker layers of planned S-LHC detectors. Both n-type and p-type MCz sensors have been...
Prof.
Lutz Feld
(RWTH Aachen University)
17/02/2010, 16:55
Contributed Talk
With conventional powering the increasing power requirements of the CMS tracker at Super-LHC cannot be met using the existing power supplies and/or cable plant. Therefore a novel powering scheme based on parallel powering with DC-DC conversion is foreseen for the CMS pixel detector at SLHC phase-1, and for the CMS outer tracker at SLHC phase-2.
We will present electrical studies (efficiency,...
Yasuo Arai
(High Energy Accelerator Research Organization (KEK))
17/02/2010, 17:20
Contributed Talk
We have been developing new monolithic radiation image detectors using a Silicon-On-Insulator (SOI) technology. The SOI wafer has both a thin low-resistivity Si and a thick, high-resistivity Si, which are bonded by an oxide layer. Radiation sensors with p-n junctions are created in the high-resistivity Si, and the output signals are directly connected to CMOS circuits fabricated in the thin Si...
Jörn Lange
(University of Hamburg)
17/02/2010, 17:45
Contributed Talk
Charge multiplication (CM) effects emerging after heavy irradiation in thin silicon diodes were studied as an option to overcome charge carrier trapping, which is the limiting factor for silicon pixel detectors at SLHC fluences in the order of 10^{16} cm^{-2}. Using the Transient Current Technique (TCT) with radiation of different penetration (670, 830, 1060 nm laser light and 5.8 MeV...
Dr
Sergey Furletov
(Bonn, Germany; On behalf of the DEPFET Collaboration)
17/02/2010, 18:10
Contributed Talk
The DEPFET pixel detector offers first stage in-pixel amplification by incorporating a field effect transistor in the high resistivity silicon substrate. In this concept, a very small input capacitance can be realized thus allowing for low noise measurements. This makes DEPFET sensors a favorable technology for tracking in particle physics. Therefore a system with a DEPFET pixel matrix was...