Speaker
Sebastian Pape
(Technische Universitaet Dortmund (DE))
Description
The Transient Current Technique (TCT) has become a very important tool for characterization of unirradiated and irradiated silicon detectors. In recent years a novel method, the Two Photon Absorption - Transient Current Technique (TPA-TCT), based on the charge carrier generation by absorption of two photons, was developed. TPA-TCT proved to be very useful in 3D characterization of silicon devices with unprecedented spatial resolution. Currently the first compact TPA-TCT setup is under development at CERN. The results obtained on non-irradiated silicon strip and LGAD sensors as well as irradiated LGAD sensors will be covered in this talk.
Author
Sebastian Pape
(Technische Universitaet Dortmund (DE))
Co-authors
Francisco Rogelio Palomo Pinto
(Universidad de Sevilla (ES))
Marcos Fernandez Garcia
(Universidad de Cantabria and CSIC (ES))
Michael Moll
(CERN)
Ivan Vila Alvarez
(Instituto de Física de Cantabria (CSIC-UC))
Moritz Oliver Wiehe
(Albert Ludwigs Universitaet Freiburg (DE))
Mr
Raúl Montero Santos
(Universidad del Pais Vasco)