Jun 21 – 23, 2021
Europe/Zurich timezone

A table-top Two Photon Absorption – TCT system: experimental results

Jun 23, 2021, 10:40 AM
20m

Speaker

Sebastian Pape (Technische Universitaet Dortmund (DE))

Description

The Transient Current Technique (TCT) has become a very important tool for characterization of unirradiated and irradiated silicon detectors. In recent years a novel method, the Two Photon Absorption - Transient Current Technique (TPA-TCT), based on the charge carrier generation by absorption of two photons, was developed. TPA-TCT proved to be very useful in 3D characterization of silicon devices with unprecedented spatial resolution. Currently the first compact TPA-TCT setup is under development at CERN. The results obtained on non-irradiated silicon strip and LGAD sensors as well as irradiated LGAD sensors will be covered in this talk.

Author

Sebastian Pape (Technische Universitaet Dortmund (DE))

Co-authors

Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES)) Marcos Fernandez Garcia (Universidad de Cantabria and CSIC (ES)) Michael Moll (CERN) Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC)) Moritz Oliver Wiehe (Albert Ludwigs Universitaet Freiburg (DE)) Mr Raúl Montero Santos (Universidad del Pais Vasco)

Presentation materials