Feb 21 – 25, 2022
Vienna University of Technology
Europe/Vienna timezone

Beam test results of a MAPS designed in a new 130nm High-Resistivity CMOS process

Not scheduled
Vienna University of Technology

Vienna University of Technology

Gusshausstraße 27-29, 1040 Wien
Recorded Presentation Semiconductor Detectors


Haibo Yang


The Topmetal-M is a newly designed Monolithic Active Pixel Sensor (MAPS). It has a matrix of 512 × 100 pixels with the pitch of 40 μm × 40 μm. The Topmetal-M is implemented with a new 130 nm High-Resistivity (> 1 kΩ∙cm) CMOS process. This process has four wells: the n-well, the p-well, the deep n-well, and the deep p-well. There are four different shapes of charge collection diode in this MAPS. A heavy-ion campaign and a laser test have been performed to study the performance of this sensor. The test results demonstrate it has a uniform response to particle energy deposition. After being exposed to 14.3krad, this sensor is still functional with a rather low rate of broken pixels. No single event was observed in both the two tests. The average spatial resolution is ~9μm. Therefore, this 130nm HR process is a good candidate for MAPS development. This paper will discuss the heavy-ion and laser beam test results of this MAPS.

Primary author


Prof. Chengxin Zhao (IMP, CAS)

Presentation materials