Speaker
Yuan Feng
(Chinese Academy of Sciences (CN))
Description
The radiation hardness of LGAD depends on the distribution and doping concentration of implanted Carbon and Boron. Based on Secondary Ion Mass Spectrometry profile of IHEP_IMEv2 LGAD devices, the impact of implantation dose and thermal load of Carbon to the radiation hardness of LGAD is discussed. A model based on the SIMS data is implemented to fit the accepter removal coefficient of LGADs and extrapolated to PIN structures. Its validity will soon be examined by the next version of IHEP LGAD.
Primary authors
Alissa Shirley-Ann Howard
(Jozef Stefan Institute (SI))
Gaobo Xu
(Chinese Academy of Science)
Gregor Kramberger
(Jozef Stefan Institute (SI))
Joao Barreiro Guimaraes Da Costa
(Chinese Academy of Sciences (CN))
Kewei Wu
(Chinese Academy of Sciences (CN))
Mei Zhao
(Chinese Academy of Sciences (CN))
Mengzhao Li
(Chinese Academy of Sciences (CN))
Xuewei Jia
(Chinese Academy of Sciences (CN))
Yuan Feng
(Chinese Academy of Sciences (CN))
Yunyun Fan
(Chinese Academy of Sciences (CN))
Zhijun Liang
(Chinese Academy of Sciences (CN))
