Speaker
Description
We investigate the transport properties of charge carrier disordered organic
semiconductors with a focus on the determination and analysis of charge carrier
mobility. By understanding that charge transport is due to incoherent hopping of
charge carriers across localized states, we use a model that relates mobility to charge
carrier (not small polarons) hopping by thermal activation. We consider the
Miller–Abrahams expression to describe the hopping rate of charge carriers and
employ kinetic Monte Carlo simulation methods to generate data from which we can
analyze charge carrier mobility as a function of applied electric field, temperature,
localization length, and spatial and energetic disorder parameters. Based on our
results, we discuss the effects of these parameters on charge carrier mobility. Our
results show the importance of the spatial disorder parameter and localization
length in the effects of electric field dependence on charge carrier mobility, and we
also evaluate the value of localization length that has been mostly considered as
0.1b, where b is the lattice parameter.
| Keyword-1 | charge transport |
|---|---|
| Keyword-2 | charge carrier dependent mobil |
| Keyword-3 | spatial disorder |
