Jun 25 – 29, 2023
Ole-Johan Dahls Hus
Europe/Oslo timezone

P2.52: Advances in the TCAD modelling of non-irradiated and irradiated Low-Gain Avalanche Diode sensors

Jun 28, 2023, 5:33 PM
Ole-Johan Spiseri (Ole-Johan Dahls Hus)

Ole-Johan Spiseri

Ole-Johan Dahls Hus

Ole Johan Dahls Hus - Oslo Science Park Gaustadalléen 23B, 0373 Oslo


Tommaso Croci (INFN, Perugia (IT))


The recently developed Low-Gain Avalanche Diode (LGAD) technology has gained growing interest within the high-energy physics (HEP) community, thanks to its capability of internal signal amplification that improves the particle detection [1]. Since the next generation of HEP experiments will require tracking detectors able to efficiently operate in environments where expected fluences will exceed 1E17 neq/cm2 [2], it is of the utmost importance the design of radiation-resistant particle detectors. To this purpose, Technology Computer-Aided Design (TCAD) simulations are a relevant part of the current detector R&D, not only to support the sensor design and optimization, but also the radiation damage understanding and modelling. In this contribution, the recent advances in the TCAD modelling of non-irradiated and irradiated LGAD sensors are presented, whose validation relies on the agreement between the simulated and experimental data - in terms of current-voltage (I-V), capacitance-voltage (C-V), and gain-voltage (G-V) characteristics, coming from devices manufactured by different foundries (e.g. HPK, FBK), and accounting for different irradiation levels and temperatures.

Primary authors

Tommaso Croci (INFN, Perugia (IT)) Arianna Morozzi (INFN, Perugia (IT)) Patrick Asenov (Universita e INFN, Perugia (IT)) Mr Alessandro Fondacci (University of Perugia) Valentina Sola (Universita e INFN Torino (IT)) Marco Ferrero (Universita e INFN Torino (IT)) Francesco Moscatelli (IOM-CNR and INFN, Perugia (IT)) Prof. Daniele Passeri (Universita e INFN Perugia (IT))

Presentation materials