Jun 25 – 29, 2023
Ole-Johan Dahls Hus
Europe/Oslo timezone

P2.58: Study of bulk damage of high dose gamma irradiated p-type silicon diodes with different resistivities

Jun 28, 2023, 5:41 PM
Ole-Johan Spiseri (Ole-Johan Dahls Hus)

Ole-Johan Spiseri

Ole-Johan Dahls Hus

Ole Johan Dahls Hus - Oslo Science Park Gaustadalléen 23B, 0373 Oslo


Iveta Zatocilova (Albert Ludwigs Universitaet Freiburg (DE))


The irradiation study of silicon diodes was carried out in order to evaluate the effects of gamma-irradiation on p-type silicon. Three types of n-in-p diodes from different manufacturers were studied. The diodes had comparable active area and thickness but different initial resistivities and oxygen concentration. Thanks to that we were able to determine how different initial parameters influence radiation-induced changes in measured electrical characteristics. The diodes were irradiated by a Cobalt-60 gamma source to total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80 minutes at 60°C. The main goal of the study was to characterize the evolution of the full depletion voltage with total ionizing dose, by measuring capacitance-voltage characteristics, and the gamma-radiation induced displacement damage by measuring current-voltage characteristics.

Primary authors

Iveta Zatocilova (Albert Ludwigs Universitaet Freiburg (DE)) Marcela Mikestikova (Czech Academy of Sciences (CZ)) Vera Latonova (Czech Academy of Sciences (CZ))


Jiri Kroll (Czech Academy of Sciences (CZ)) Radek Privara (Palacky University (CZ)) Patrik Novotny (Czech Academy of Sciences (CZ)) Denis Dudas (Czech Technical University (CZ)) Jiri Kvasnicka (Czech Academy of Sciences (CZ))

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