Semiconductor strip sensors are widely applied for X-ray imaging applications such as spectroscopy. X-ray imaging devices are required to provide good position resolution and spectroscopic features, which implies very tight noise level requirements too –. This work presents a design and simulations of the front-end electronics designed to work with 1D silicon strip sensors with a 75 μm pitch and 1 cm length, exhibiting around 1.5 pF capacitance. The detector is DC-coupled to a read-out ASIC built of 16 read-out channels. The detector read-out system is expected to operate with an X-ray energy range from 4 to 10 keV.
The charge processing chain comprises a CSA, a shaping amplifier with a selectable peaking time value, a discriminator, and some supporting circuits. It provides various modes of operation: a continuous read-out with a pole-zero canceling circuit and a mode with digitally-assisted pulsed reset of the charge-sensitive amplifier (CSA) as well as the active baseline restorer. The presented front-end is designed in the CMOS 180 nm process and occupies an area equal to 1525 x 1525 μm. Each channel dissipates the power of around 6 mW and the total noise is below 20 e- rms. In the fast operation mode with a digital reset, the front-end can process the incoming hits at a rate of 50 kps/ch. The analysis of the designed ASIC including reliability and PVT test results will be presented.
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The authors acknowledge funding from the National Science Centre (Research Project 2020/37/N/ST7/01546).