SiPMs for Belle II ARICH

Not scheduled
20m
31/3-004 - IT Amphitheatre (CERN)

31/3-004 - IT Amphitheatre

CERN

105
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Speaker

Dania Consuegra Rodríguez (J. Stefan Institute)

Description

Detectors used in high energy physics experiments will need to keep sufficient performance during a few years of data-taking, despite the accumulation of radiation damage, which, for example, in the planned upgrades of the LHCb and Belle II experiments, is estimated at about 10¹³ 1-MeV neutron equivalent/cm² by detector end-of-life. In this work, 6 NUV-HD-RH silicon photomultiplier (SiPM) samples developed by the Fondazione Bruno Kessler (FBK) with the purpose of improving the SiPM radiation hardness were characterized before and after irradiation. Each sample has 3 wire-bonded 1x1 mm² 15 µm pitch SiPMs with different structures. In total, 18 SiPMs, 6 SiPMs of the same structure, were characterized before irradiation. 5 of the samples were irradiated at the JSI TRIGA reactor with different fluencies: 10⁹ neq/cm², 10¹⁰ neq/cm², 10¹¹ neq/cm², 10¹² neq/cm² and 10¹³ neq/cm², while leaving one of the samples non-irradiated for crosscheck. In total, 15 SiPMs, 5 SiPMs of the same structure, were re-characterized after irradiation. The sample irradiated at 10⁹ neq/cm² was annealed at room temperature and its 3 SiPMs (one per structure) re-characterized after 1 month of annealing. For the SiPM characterization in all the cases, I-V curve measurements, threshold scan, and waveform analysis, including single photon time resolution, were carried out at room temperature and at different controlled temperature steps down to liquid nitrogen temperature.

Primary author

Dania Consuegra Rodríguez (J. Stefan Institute)

Co-authors

Andrej Seljak Peter Krizan Rok Dolenec (Jozef Stefan Institute (SI)) Rok Pestotnik (Jozef Stefan Institute (SI)) Samo Korpar

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