8-13 August 2011
Rhode Island Convention Center
US/Eastern timezone

Study of the readout chip and silicon sensor degradation for the CMS pixel upgrade

9 Aug 2011, 17:00
15m
556 (Rhode Island Convention Center)

556

Rhode Island Convention Center

Parallel contribution Detector Technology and R&D Detector Technology and R&D

Speaker

gemma Tinti (Department of Physics and Astronomy-University of Kansas)

Description

Hybrid silicon pixel detectors are currently used in the innermost tracking system of the Compact Muon Solenoid (CMS) experiment. Radiation tolerance up to fluences expected for a few years of running of Large Hadron Collider (LHC) has already been proved, although some degradation of the part of the silicon detector closer to the interaction point is expected. During the LHC upgrade phases, the level of dose foreseen for the silicon pixel detector will be much higher. To face this aspect, dedicated irradiation tests with fluences above $\mathcal{O (10^{15})$~n$_{\textrm{eq}}$/cm$^2$ have been performed on the silicon sensor and readout chip. Changes in the operation of the sensor and readout chip as a function of the fluence are presented. The charge collection efficiency has been studied: partial recovery of the detector efficiency can be achieved by operating the detectors in a controlled environment and at higher bias voltage.

Primary author

gemma Tinti (Department of Physics and Astronomy-University of Kansas)

Presentation Materials