4H-SiC detectors have potential to operate in high radiation and room-temperature environments due to the broader band gap, elevated atomic displacement threshold energy and high thermal conductivity. In order to verify the irradiation resistance of 4H-SiC LGAD devices, we successfully prepared LGAD devices with a gain factor of 3 and proceeded to irradiate the device with protons at 80 MeV (2...
Silicon carbide as wide band-gap semiconductor, has physical characteristics of wide bandgap, excellent carrier mobility, higher breakdown electric field, higher thermal conductivity and higher saturated drift velocity compared with silicon. However, the existing 4H-SiC radiation detectors all use metal electrodes, which are easy to produce structural defects after metal electrode irradiation,...
Wide band-gap (WBG) semiconductors, specifically SiC and GaN, have shown increasing use in industry as transformative innovations for high-efficiency and high-power electronic devices. They stand as some of the most promising contenders for a new generation of semiconductors that could overtake Si in certain fields. Due to this greater commercial use, developments have been made in the growth...
SiC is among the most promising materials for use in detectors operating under extreme radiation and temperature conditions. For these applications, the replacement of the front electrode with a graphene layer could represent a significant improvement due to the thermal and electronic properties of this novel material. As a first approach, the Barcelona Institute of Microelectronics has...
Pristine and neutron-irradiated silicon carbide (SiC) detectors have been systematically characterized using the Two-Photon Absorption Transient Current Technique (TPA-TCT) at the laser facility of the University of the Basque Country (UPV/EHU). The SiC detectors under investigation are p-in-n diodes fabricated at IMB-CNM, with an active thickness of 50 microns.
Our study reveals a...
Silicon carbide (SiC) detectors have recently undergone a resurgence of research interest due to significant industry improvements in production and processing. The material's favorable characteristics, including extremely small leakage currents, a high breakdown voltage, and high charge carrier velocities, make it a promising candidate for replacing silicon detectors in the future. One...
Two Photon Absorption (TPA) effect is a second order non-linear optical effect in semiconductor material, which refers to the phenomenon that when a femto-second laser is focused inside the device, electrons in valance band could absorb two photons simultaneously and create a point-like activation region around laser focus. Electron-hole pairs generated in the activation region can be used to...
Silicon Carbide (SiC) is a promising material for particle detection and beam diagnostics due to its supposedly high radiation resilience. We established a new probe station setup and an experimental setup to evaluate SiC performance using radioactive sources. This effort involved integrating SiC pad sensors from the Common RD50 project into a small, shielded tabletop setup, enabling precise...
As a wide bandgap semiconductor material, silicon carbide (SiC) has been widely used in power devices due to its inherent advantages. In recent years, the use of SiC as a replacement for silicon in charged particle detectors for collider experiments has gained increasing attention. However, due to various limitations in SiC processing (such as ultra-low doping epitaxy and high energy ion...
Caribou is a versatile data acquisition system used in multiple collaborative frameworks (CERN EP R&D, DRD3, AIDAinnova, Tangerine) for laboratory and test-beam qualification of novel silicon pixel detector prototypes. The system is built around a common hardware, firmware and software stack shared accross different projects, thereby drastically reducing the development effort and cost. It...
Pixelated SiC LGAD device with both timing and position capabilities has the potential to address the 4D tracking in extreme fluence of future collider experiment. In order to improve the tracking and timing capability of SiC-LGAD devices, the development of DC-coupled and AC-coupled LGAD devices paves the way for the application of wide band-gap semiconductor detectors in high energy fields....
4H-SiC is becoming a leading candidate for next-generation semiconductor detectors due to the increased availability in industry. These new sensors show promising properties like its stable performance across a wide temperature range, making cooling of irradiated devices not necessary.
This project aims to study radiation hardness, annealing, traps, and the applicability of the NIEL...
