The meeting opened at 15:00 and closed at 15:45.
The number of attendees peaked at 18.

Jürgen Burin gave a presentation about a very thorough literature review of TCAD parameters for 4H-SiC.
    Chapters on relative permittivity and impact ionisation models and parameters are available at https://jburin.web.cern.ch/
    More chapters will be added as they are finished. This is a very useful resource for future simulations.

    Questions:

• Michael Moll: have you also looked at non-local models for impact ionisation? JB: Have encountered some, but they are not available in TCAD tools.
• Jörn Schwandt: The impact ionisation also depends on the transport model used, and the size of the simulated device. For devices smaller than ~µm the models don't work so well anymore.
• Jörn: The purity of materials has also changed, so the mobility may have changed over the last 40 years. JB: The review shows that the models haven't changed much.
• Marco: Are there missing parameters, that are needed for simulations? JB: There are some missing data. It's an open question to identify where the shortcomings are.

The frequency of the meetings has been temporarily decreased, and will occur based on availability of speakers. Information about the next meeting will come from the conveners soon.