The meeting opened at 15:00 and closed at 15:40.
The number of attendees peaked at 17.

Jürgen Burin presentated the third and fourth chapter (incomplete ionization and DOS mass, respectively) from the literature review of TCAD parameters for 4H-SiC.

The results can be summarised as follows:

• for the incomplete ionization, aluminum, nitrogen, boron and phosphorus have been investigated. The first two are the most investigated. There are new models for changing ionization energy on the horizon. At high doping concentration, the ionisation energy depends on the doping concentration
• for the density of state mass, there are very few measurements and mainly calculations. There is a significant temperature variation for the holes which is not yet not yet fully covered
• the next chapters will involve the band gap and its temperature variations

Questions and Answers:

• Marco: as the quality of samples and characterization techniques has changed in recent years, might it be useful to repeat some measurements, such as DLTS, to improve our knowledge of our models and properties? Jürgen: we observed no significant change in parameter values over the decades
• Håkan: implementing the logistic model for the dependence of ionization energy on doping might be feasible in Allpix Squared. Are there numbers for the parameters in the equation? Jürgen: there's one publication providing numbers. It only affects very high doping concentrations however.

Information about the next meeting will come from the conveners soon.