The meeting opened at 15:00 and closed at 15:40.
The number of attendees peaked at 21.

General news:

• The DRDC review has started. WG4 also has research goals that should be met.
  
• We want to enhance engagement in WG4. We will invite talks for meetings going forwards, on top of the usual round table discussions and presentations

Umberto Follo presented on Time resolution simulations of monolithic CMOS sensors with internal gain.

• The ARCADIA sensor has a gain of 5-30
• Simulations performed using TCAD and Monte Carlo (both Garfield++ and Allpix Squared)
• Electronics jitter also simulated for different injected charge
• Conclusion: time resolution and gain from simulations match data from prototype sensors well

Questions and Answers:

• Håkan W: If you go thinner you get a lower singal, which looks like it will lead to increased electronics jitter? UF: Yes, but it can be compensated by increasing the gain.
• Michael M: The gain will cahnge with the bias voltage as well. How did you tune the simulations? UF: We have had several test sensors. We know we can trust the foundry, the sensors will have the correct gain in what we get in silicon. The gain in simulations is tuned to experimental values from the sensors.
• Gregor K: Did you also have a look using Geant4, to see if things match? UF: We use Geant4 via Allpix Squared. Allpix Sqaured is not alwas in agreement with Garfield++, but similar in time resolution. HEED is used in Garfield++. Heinrich S: Garfield++ is not sampling a Landau distribution, it really goes via first principles for each step in the deposition.

Other updates:

• Håkan W. reported that a paper describing a simulation of MAPS sensors using generic doping profiles has been published.

Information about the next meeting will come from the conveners soon.