Jun 13 – 15, 2012
LAL Orsay
Europe/Paris timezone

Performance studies of Silicon Photomultipliers with quench resistors integrated to silicon bulk

Jun 13, 2012, 2:20 PM
Amphithéâtre Pierre Lehmann (LAL Orsay)

Amphithéâtre Pierre Lehmann

LAL Orsay

Centre Scientifique d'Orsay - Bat 200 91898 Orsay cedex FRANCE
Oral presentation SiPM


Christian Jendrysik (Max-Planck-Institute for Physics)


A Silicon Photomultiplier (SiPM) is a novel type of photon-counting device. Due to ongoing developments in SiPM technology, it becomes promising candidate to replace conventional photomultiplier tube in a multitude of applications. The Geiger-mode operation of SiPMs requires a high ohmic quench resistor which is realized in conventional devices by surface growth of a polysilicon layer. This, together with the contacts for the individual resistors, results in an obstacle for incident light and limits the photon detection efficiency of the device. At Max-Planck semiconductor laboratory a novel detector concept was developed in which the quench resistor is integrated into the silicon bulk resulting in a free entrance window for light. Simulations show the feasibility of the device and the first prototypes were produced. Geometrical variations of cell size and gap region were implemented in order to study the influence on detector parameters (recovery time, optical cross talk, etc). The concept of the device and its advantages and disadvantages will be presented. The results of the characterization of prototype production will be discussed. Possible future developments of the concept will be presented.

Primary author

Christian Jendrysik (Max-Planck-Institute for Physics)


Mr Gerhard Liemann (Max-Planck-Institute for Physics) Hans-Guenther Moser (MPI fuer Physik) Jelena Ninkovic (Max PlanckInstitute for Physics) Laci Andricek (Werner-Heisenberg-Institut-Max-Planck-Institut fuer Physik-Max-) Rainer Richter (Max-Planck-Institute for Physics)

Presentation materials