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SUMMARY:Estimating the lifetime of the RD53 Pixel ASIC at the HL-LHC
DTSTART:20261006T070000Z
DTEND:20261006T083000Z
DTSTAMP:20260920T110900Z
UID:indico-event-1724621@indico.cern.ch
DESCRIPTION:Speakers: Maria Mironova (Lawrence Berkeley National Lab. (US)
 )\n\nRadiation tolerance was one of the central design challenges for the 
 RD53 pixel readout ASICs developed for the Phase-II upgrades of the ATLAS 
 and CMS pixel detectors. These chips are required to remain functional aft
 er exposure to total ionizing doses of up to 1 Grad throughout operation a
 t the High-Luminosity LHC.\nThis seminar will cover the radiation qualific
 ation campaign performed on the main components of the RD53 ASIC\, includi
 ng the Shunt-LDO powering circuit\, the analog front-end and the digital l
 ogic. It will then focus on detailed studies of ring oscillator circuits e
 mbedded in the ASIC\, which are used to measure radiation-induced degradat
 ion of the digital logic. Measurements from X-ray irradiations at differen
 t dose rates are combined with a long-term\, low-dose-rate irradiation usi
 ng a Kr-85 source to characterize the dose-rate dependence of the gate del
 ay and assess the effects of high doses delivered over many years. These r
 esults are used to predict the evolution of the digital logic under realis
 tic operating conditions and estimate the expected lifetime of the ASIC in
  the upgraded ATLAS Inner Tracker.\n\nhttps://indico.cern.ch/event/1724621
 /
LOCATION:13/2-005 (CERN)
URL:https://indico.cern.ch/event/1724621/
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