Sep 7 – 12, 2014
University of Surrey
GB timezone
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Radiation effects on true charge transfer TDI sensor in CMOS

Sep 10, 2014, 2:00 PM
1h 40m
AP3&4 (University of Surrey)


University of Surrey

Guildford, UK
Poster Presentation Detectors for High Radiation and Extreme Environments Session 10: Posters 1 (Particle Physics, Pixel Detectors and Lifesciences)


Mr Joseph Rushton (Open University)


Time Delay and Integration (TDI) sensors are used to increase Signal to Noise Ratio (SNR) when imaging fast moving objects. Applications include industrial process monitoring and earth observation from aircraft or spacecraft. Radiation hardness needs to be evaluated before operating in the space environment. The subject of this work is a true charge transfer TDI device, manufactured on a CMOS process, intended for earth observation applications. Changes in imaging performance due to irradiation of the TDI sensor are presented. In particular the effect of irradiation on Charge Transfer Efficiency (CTE) is shown.

Primary author

Mr Joseph Rushton (Open University)


Prof. Andrew Holland (Open University) Mr Frederic Mayer (e2v Semiconductor) Dr Jason Gow (Open University) Dr Konstantin Stefanov (Open University)

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