Svetlana Kushpil (Acad. of Sciences of the Czech Rep. (CZ))
The position sensitive detectors operate in high intensity radiation field of the collider experiment . Important task is to estimate the influence of different radiation effects on properties of the detector. We focus on the laboratory studies to estimate a reliability of different types of silicon detectors. We use the simple test structures produced by standard technology for the silicon detectors. We give the primary attention to the case when the depth of active detector region varies from 10 to 20um because it leads to the most significant influence of SiO2-Si interface on a processes in silicon bulk. We present the experimental results of long term irradiation test with Am241 (one year) of the slow charge transport inside the SiO2-pSi-iSi-nSiSiO2 structures. Some theoretical calculations are presented for MAPS, APS and position sensitive detectors with large active area - SSD, SDD. References:  Thomas Peitzmann (for the ALICE Collaboration), Journal of Physics G: Nuclear and Particle Physics, Vol. 38, No 17, (2011).
Svetlana Kushpil (Acad. of Sciences of the Czech Rep. (CZ)) Dr Vasilii Kushpil (NPI of ASCR Rez, Czech Republic) Mr Vasily Mikhaylov (NPI of ASCR Rez, Czech Republic)