11-15 February 2013
Vienna University of Technology
Europe/Vienna timezone

Evaluation of the Timepix chip radiation hardness using 60Co source.

Not scheduled
50m
Vienna University of Technology

Vienna University of Technology

Gußhausstraße 25-29, 1040 Wien (Vienna), Austria
Board: 90
Poster Electronics

Speaker

Martin Hejtmanek (Czech Technical University in Prague (CZ))

Description

Radiation hardness and stability of detection properties are critical parameters in applications of semiconductor radiation detectors. The 0.25 um CMOS technology provides high degree of inherent radiation hardness to displacement and ionization damage. The active volumes of sensor and readout chip are insensitive to the ionization damage effects, contrary to the SiO2 insulating layers. The insulating layers have low mobility of holes, which get trapped and present themselves as a space charge, which shifts the working points of MOS transistors, increases leakage and dark currents in sensors. Here, we present the study of operational, detection and signal processing properties of the irradiated Timepix chip exposed to a high-flux 60Co source to the operational limits of the chip. The annealing process at the room temperature was evaluated, using 90Sr and 241Am sources to measure the detector response over a time period.
quote your primary experiment Medipix

Primary author

Martin Hejtmanek (Czech Technical University in Prague (CZ))

Co-authors

Maria Carna (Czech Technical University in Prague (CZ)) Michal Marcisovsky (Czech Technical University in Prague (CZ))

Presentation Materials