11-15 February 2013
Vienna University of Technology
Europe/Vienna timezone

Resolution studies on the ohmic side of silicon microstrip sensors

13 Feb 2013, 10:15
20m
Vienna University of Technology

Vienna University of Technology

Gußhausstraße 25-29, 1040 Wien (Vienna), Austria

Speaker

Manfred Valentan (HEPHY Vienna)

Description

High precision collider experiments at lepton accelerators and b-factories need highly accurate position resolution while preserving a low material budget for precise particle tracking. Thin double-sided silicon detectors (DSSDs) fulll both requirements, if a careful sensor design is applied to preserve a high charge collection effciency. In this continuation of a previous study we investigate the p-stop and the p-spray blocking methods for strip isolation on the n-side (ohmic side) of DSSDs with n-type bulk. We compare three different p-stop patterns: the common p-stop pattern, the atoll p-stop pattern and a combination of these patterns, whereas for every pattern four different geometric layouts are considered. Moreover we investigate the effect of the strip isolation on sensors with one intermediate strip. Sensors featuring these p-stop patterns and the p-spray blocking method were tested in a 120 GeV/c hadron beam at the SPS at CERN, gamma-irradiated to 100 kGy at SCK-CEN (Mol, Belgium), and immediately afterwards tested again in the same setup as before. In this new study we used a renwed p-stop design, had all sensor types irradiated, and for the first time use point resolution values obtained by particle tracking for judging the sensor performance. The results of these tests are used to optimize the design of DSSDs for the Belle II experiment at KEK (Tsukuba, Japan).
quote your primary experiment Belle II

Primary author

Manfred Valentan (HEPHY Vienna)

Presentation Materials