Silicon Sensors for High-Luminosity Trackers – RD50 Status Report

Jun 3, 2014, 4:30 PM
Veilingzaal (Beurs van Berlage)


Beurs van Berlage

Oral Sensors: 1b) Semiconductor Detectors I.b Semiconductors


Susanne Kuehn (Albert-Ludwigs-Universitaet Freiburg (DE))


The revised schedule for the LHC upgrade foresees a significant increase of the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity-LHC). The final upgrade is planned for around 2023, followed by the HL-LHC running. This is motivated by the need to harvest the maximum physics potential from the machine. It is clear that the high integrated luminosity of 3000 fb-1 will result in very high radiation levels, which manifest a serious challenge for the detectors. This is especially true for the tracking detectors installed close to the interaction point. For HL-LHC, all-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed in the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway, with an open cooperation across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. One research topic is to study sensors made from p-type silicon bulk, which have superior radiation hardness as they collect electrons instead of holes. A further area of activity is the development of advanced sensor types like 3D detectors designed for the extreme radiation levels expected for the inner layers. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Observations of charge multiplication effects at very high bias voltages in a number of detectors will be reported. Based on our results, we will give recommendations for the silicon detectors to be used for LHC detector upgrades.

Primary author

Susanne Kuehn (Albert-Ludwigs-Universitaet Freiburg (DE))

Presentation materials