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Nov 14 – 16, 2012
Europe/Zurich timezone

Bias effects in highly irradiated n+-p silicon microstrip detectors after long term annealing

Nov 15, 2012, 4:55 PM


6-2-024 on 14th & 15th Nov. 222-R-001 on 16th Nov.


Marko Milovanovic (Jozef Stefan Institute, Ljubljana)


Effects of long term applied bias on charge collection properties in highly irradiated and annealed FZ n+-p silicon microstrip detectors were examined using the Alibava read-out system and Edge-TCT. A significant drop of both collected charge and the leakage current is observed after keeping the detectors under bias for longer periods of time (>1000 min). The time pattern is found to be fully repeatable under any bias or temperature and obviously seem to influence charge multiplication only. Applying sufficient bias voltage however (>1000 V), results in high enough SNR even after this fall to the stable level (after ca. 2000 min). Both CCE and the leakage current recover after keeping the detectors at room temperature and no bias for more than 24h.

Primary author

Marko Milovanovic (Jozef Stefan Institute, Ljubljana)


Gregor Kramberger (Jozef Stefan Institute (SI)) Igor Mandic (Jozef Stefan Institute (SI)) Marko Mikuz (Jozef Stefan Institute (SI)) Dr Marko Zavrtanik (Jozef Stefan Institute (SI)) Vladimir Cindro (Jozef Stefan Institute (SI))

Presentation materials