Detector Characterization and Simulations
- Eckhart Fretwurst (II. Institut fuer Experimentalphysik)
- Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)
Joachim Erfle (Hamburg University (DE))
11/15/12, 9:00 AM
The aim of the CMS tracker upgrade campaign is to find a new radiation hard sensor material for the HL-LHC upgrade of the CMS tracker. Different test structures and sensors were implemented on a variety of silicon materials with different thicknesses by Hamatsu Photonics, Japan. Samples have been irradiated to fluences up to 1.5E15 with protons at Karlsruhe and the CERN PS and with reactor...
Ms Coralie Neubüser (Úniversity of Hamburg)
11/15/12, 9:15 AM
Silicon n-type diodes made of FZ and MCz material were manufactured for the CMS HPK campaign and irradiated with 23 MeV and 23GeV protons. At a fluence of 3e14/cm² neq the MCz n-type diodes demonstrate clear type inversion after 23MeV proton irradiation. This does not appear after the irradiation with 23 GeV protons. An influence of process induced bulk defects could be excluded. In order to...
Alexandra Junkes (Brown University)
11/15/12, 9:30 AM
Marcos Fernandez Garcia (Universidad de Cantabria (ES))
11/15/12, 9:40 AM
First measurements of small strip detectors built within the HPK campaign of CMS and characterized using an edge-Transient Current Technique (eTCT) are presented. P and N bulk FZ 320 mum thick detectors are studied and compared to reference Micron detectors. A method to estimate the electric field profile inside the detector using normal incidence TCT and edge-TCT is also presented.
Alexandre Chilingarov (Lancaster University (GB))
11/15/12, 10:00 AM
Experimental results on the temperature dependence of the current generated in Si bulk are presented and compared with expectations.
15. Charge collection studies on heavily irradiated diodes from the RD50 multiplication run (an update)
Gregor Kramberger (Jozef Stefan Institute (SI))
11/15/12, 10:20 AM
Special diodes were designed on RD50 multiplication mask which combine the ease of use of a pad-detector with electric field of a strip detector. A series of charge collection measurements was performed with diodes of different implant properties and thicknesses. The diodes were irradiated with neutrons to the total accumulated fluence of 8e16 cm-2. Charge collection efficiency for 90Sr was...
Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))
11/15/12, 11:10 AM
N-on-p Micron diodes were irradiated with reactor neutrons to 1x1015, 2x10^15 and 1x10^16 neq/cm^2. Diodes were submitted to graduated annealing steps at 20°, 40°, 60° and 80°C to verify previously accepted accelerating annealing factors. The evolution of leakage currents and full depletion voltage (FDV) were measured. The FDV was determined from Capacity-Voltage curves and Charge Collection...
Igor Mandic (Jozef Stefan Institute (SI))
11/15/12, 11:30 AM
TCT measurements with strip detectors will be presented. Focused IR laser light pulses were directed to the surface (top) of the detector and TCT signals were measured at different locations of light impact. Measurements were made with specially designed mini strip detectors in which n-type implants are not fully covered with metal allowing laser TCT measurements also with pulses directed on...
Dr Alexandre Chilingarov (Lancaster University, UK)
11/15/12, 11:50 AM
Full Detector Systems
Electrical characterisation is made of the n-in-p microstrip sensors irradiated by 1 MeV neutron equivalent fluence up to 1E+16 n/cm2. It is shown that the interstrip capacitance is not affected by irradiation and the interstrip resistance remains very high up to the maximum investigated fluence.
Marco Bomben (Univ. P. et Marie Curie (Paris VI) (FR))
11/15/12, 12:10 PM
RD50/PPS session (Friday morning)
TCAD simulations of irradiated silicon p-bulk sensors have been carried out and the results have been compared to CERN 24 GeV-p irradiated n-in-p diodes. The simulations' results are in good agreement with measured data and allow for realiable predictions on future detectors.
21. Simulation of electric field profile in Si irradiated detectors with a consideration of carrier generation parameters
Dr Elena Verbitskaya (Ioffe Physical-Technical Institute of Russian Academy of Sciences)
11/15/12, 12:30 PM
Impact of the parameters which define bulk generation current of Si irradiated detectors on the detector characteristics is analyzed. The electric field profile and space charge/free carrier concentrations are simulated regarding generation current and carrier generation lifetime.
Robert Eber (IEKP - KIT)
11/15/12, 2:00 PM
Simulations with an effective 2-trap radiation damage model have been performed. Adjustments of the EVL model and necessity of the adjustments are presented. In particular, the focus is on generated current after irradiation, depletion voltage and TCT simulation. Simulations are compared to IV, CV and TCT measurements done in the framework of the CMS HPK campaign.
Ashutosh Bhardwaj (University of Delhi (IN))
11/15/12, 2:20 PM
This work describes the simulation results performed within the RD50 simulation Group on the Double Electric Field Peak behaviour after radiation damage. As per the decision taken in the last RD50 meeting within the Simulation Group, the radiation damage is simulated by incorporating simple two deep level models in Silvaco and results are compared with modeled data. Since bulk generation...
Michael Moll (CERN)
11/15/12, 2:40 PM
The Synopsys TCAD software package was used to perform a simulation of a simple p+-n-n+ diode containing two defects. The simulation parameters as described in the RD50 Simulation Working Group (V.Eremin) were used and the results of the simulation are compared to the data provided by V.Eremin.
Eckhart Fretwurst (II. Institut fuer Experimentalphysik), Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)
11/15/12, 3:00 PM