Speaker
Anna Macchiolo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Description
We will report about the characterization of FE-I3 and FE-I4 active edge planar n-in-p pixels produced at VTT, Finland. The sensor thickness is 100 um and different geometries of the sensor edges have been implemented, down to an inactive width of only 50 um. The charge collection properties before and after irradiation have been studied with radioactive sources and analysis of beam tests at CERN-SPS and
DESY
