Development of HPK n-in-p Pixel Sensors for HL-LHC

Sep 3, 2013, 11:00 AM
Dahlia (B2F) (International Conference Center Hiroshima)

Dahlia (B2F)

International Conference Center Hiroshima

1-5 Nakajima-cho Naka-ku, Hiroshima Japan
ORAL Pixels (including CCD's) - Charged particle tracking Session 3


Shintaro Kamada (Hamamatsu Photonics K.K)


We, Hamamatsu Photonics K.K have been developing high raditation-tolerant n-in-p planar pixel sensors which can be used for HL-LHC. N-in-p planar pixel sensor is one of candidate for HL-LHC, and has advantages of high radiation-tolerance with reasonable price (compared with 3D sensor or diamond sensor). On the other hand, n-in-p planar pixel sensors also have some issues to be solved such as "slim egde/protection for edge HV sparking/decrease of efficiency after irradiation". We are now trying to solve these issues by wafer level process, which is important for mass production. In this symposium, we show our progress of development, mainly about slim edge.

Primary author

Shintaro Kamada (Hamamatsu Photonics K.K)


Kazuhisa Yamamura (Hamamatsu Photonics K.K) Silicon collaboration ATLAS-Japan (ATLAS-Japan Silicon collaboration) Yoichi Ikegami (High Energy Accelerator Research Organization (KEK)) Yoshinobu Unno (High Energy Accelerator Research Organization (KEK))

Presentation materials