14–16 Apr 2008
Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain
Europe/Zurich timezone

Systematic measurements of p and n type diodes irradiated with protons, pions and neutrons

14 Apr 2008, 15:00
30m
Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Residencia de Investigadores del CSIC-Generalitat de Catalunya Carrer Hospital, 64. E08001, Barcelona, Spain
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations P-type strip detectors 2

Speaker

Gregor Kramberger (Jozef Stefan Institute)

Description

A large set of diodes processed by Micron on MCz and FZ n and p type materials was investigated up to equivalent fluences of 3e15 cm-2. Charge collection measurements were performed in addition to C-V. The charge collection efficiency was found to be better than expected from simulations and good agreement was found between full depletion voltages determined from charge collection and CV measurements.

Primary author

Gregor Kramberger (Jozef Stefan Institute)

Co-authors

Dr Igor Mandić (Jozef Stefan Institute) Prof. Marko Mikuž (Jožef Stefan Institute) Prof. Vladimir Cindro (Jozef Stefan Institute)

Presentation materials