Name: 10th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices
Start: 2014-10-08T08:00:00+02:00
End: 2014-10-10T18:00:00+02:00
Location: Firenze, Italy

10th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices

from Wednesday, 8 October 2014 (08:00) to Friday, 10 October 2014 (18:00)

Monday, 6 October 2014
Tuesday, 7 October 2014
Wednesday, 8 October 2014

08:30

08:30 - 09:15

09:15

09:15 - 09:30
09:30
09:30 - 11:00
Contributions

09:30 Invited Lecture: The PixFEL project: developing a fine pitch, fast 2D X-ray imager for the next generation X-FELs - Lodovico Ratti (University of Pavia)

10:15 Invited Lecture: Lessons learned in constructing diamond-based pixel systems - Harris Kagan (Ohio State University)
11:00 Coffee Break
Coffee Break
11:00 - 11:20
11:20
11:20 - 13:00
Contributions

11:20 Diamond detector time resolution for large angle tracks - Gabriele Chiodini (INFN Lecce)

11:40 Charge collection efficiency of three-dimensional polycrystalline diamond detectors - Stefano Lagomarsino (DDepartment of Physics and INFN of Florence)

12:00 LASER IRRADIATION OF MONOCRYSTALLINE CVD DIAMOND: A QUANTUM-KINETIC MODEL BASED ON BOLTZMANN EQUATION - Tzveta Apostolova (Institute for Nuclear Research and Nuclear Energy (INRNE))

12:20 Results from the pilot runs and beam tests of diamond pixel detectors - Harris Kagan (Ohio-State University, USA)

12:40 First Results on biased CMOS MAPS-On-DIAMOND devices - Daniele Passeri (INFN Perugia) Keida Kanxheri (INFN Perugia) Leonello Servoli (INFN Perugia, Italy)
13:00 Lunch
Lunch
13:00 - 14:30
14:30
14:30 - 15:50
Contributions

14:30 Electronic stimulation of interstitial defect reactions in irradiated p-type silicon - Leonid Makarenko (Belarusian University, Minsk)

14:50 On polarization in compensated semiconductors - Arie Ruzin (Tel Aviv University (IL))

15:10 Processing and characterization of epitaxial grown GaAs radiation detectors - Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

15:30 An evidence of strong electron-phonon interaction in the neutron irradiation induced defects in silicon - Vytautas RUMBAUSKAS (Vilnius University, Lithuania)
15:50 Coffee break
Coffee break
15:50 - 16:10
16:10
16:10 - 18:00
Contributions

16:10 Invited Talk: Silicon Sensors for Trackers at High-Luminosity Environment - RD50 Collaboration Status Report - Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

16:40 Leakage Current Measurements of highly irradiated Silicon Strip Sensors - Sven Wonsak (University of Liverpool (GB))

17:00 Long term charge collection performance of silicon sensors: an investigation on the causes of the recently observed - Riccardo Mori (Albert-Ludwigs Universität Freiburg, Freiburg im Breisgau, Germany)

17:20 Charge collection in Si detectors irradiated in-situ at superfluid helium temperature - Elena Verbitskaya (Ioffe Physical-Technical Institute, St. Petersburg, Russian Federation)
Thursday, 9 October 2014
09:00
09:00 - 11:00
Contributions

09:00 3D Pixels for the AFP Experiment - Ivan Lopez Paz (Universitat Autònoma de Barcelona (ES))

09:20 Characterization of 3D and planar Si diodes with different neutron converter materials - Roberto Mendicino (University of Trento, Department of Industrial Engineering, Trento, Italy and INFN, TIFPA, Trento, Italy)

09:40 3D simulations of device electrical characteristics of 3D-Trench electrode detector - Zheng Li (Xiangtan University)

10:00 Modeling and simulation of charge collection properties for 3D-Trench electrode detector - Zheng Li (Xiangtan University)

10:20 Upgrade to the Birmingham Irradiation Facility - Kerry Parker (University of Sheffield)
11:00 Coffee Break
Coffee Break
11:00 - 11:20
11:20
11:20 - 13:00
Contributions

11:20 Monolithic active pixel sensor for ionizing radiation using 180nm HV-SOI process - Thomas Hemperek (Physikalisches Institut, University of Bonn, Germany)

11:40 Measurements Results on a 180nm SOI Monolithic Active Pixel Sensor - Sonia Fernandez Perez (CERN)

12:00 Test-beam results on a monolithic pixel sensor in the 0.18um Tower-Jazz technology with high res istivity epitaxial layer - Serena Mattiazzo (Università di Padova, Italy on behalf of the ALICE Collaboration)

12:20 High Intensity Irradiation Influence on Gain, Noise nad Offset Univormity of a Pixel Detector Readout designed in 130nm CMOS - Tadeusz SATŁAWA

12:40 Investigation of total ionizing dose effect and displacement damage in 65 nm CMOS transistors exposed to 3 MeV proton - Dario Bisello (Universita e INFN (IT)) LILI DING (INFN, Padova; Department of Information Engineering, Padova University, Italy) Marta BAGATIN (Department of Information Engineering, Padova University, Italy)
13:00 Lunch
Lunch
13:00 - 14:30
14:30
14:30 - 16:10
Contributions

14:30 Study on the Total Ionizing Dose Effects of SiGe HBTs Irradiated with 60Co γ Rays - Zheng Li (Xiangtan University, Xiangtan, Hunan ,411105, China)

14:40 Simulation of Synergistic Effects on Lateral PNP Bipolar Transistors induced by Neutron and Gamma Irradiation - Chenhui Wang (Northwest Institute of Nuclear Technology of China,Xi’an 710024,China)

14:50 Radiation tests of pixel readout chip designed in 40nm CMOS technology - Tadeusz SATŁAWA

15:00 ATLAS Pixel IBL modules construction experience and developments for future upgrade - Andrea Gaudiello (Univerisyt of Genova and INFN)

15:10 Development of a bidimensional dosimeter for IMRT based on polycrystalline diamond - Margherita Zani (Universita' di Firenze) Monica Scaringella (University of Firenze, Italy)

15:20 Belarusian HPHT diamonds. Material properties and detector characteristics - Leonid Makarenko (Belarusian University, Minsk)

15:30 Primary Experimental Radiation Effects Results of 28 Nanometer Configuration System-on-Chip(Xilinx Zynq-7010 SoC) - Shuhuan Liu (School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, Shaanxi, 710049,P.R. China)

15:40 Simulation of Single Event Upset in SRAMs Induced by low Energy Proton With Geant4 - yonghong li (xi’an jiaotong university)

15:50 Primary Design and Numerical Simulation Studies on 3D Si SOI Microdosimeter - Shuhuan Liu (School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, 710049, China)
16:10 Coffee break
Coffee break
16:10 - 16:30

19:30 Conference Dinner
Conference Dinner
19:30 - 22:00
Friday, 10 October 2014
09:00
09:00 - 11:00
Contributions

09:00 Performance studies for the new CMS outer tracker module concept at HL-LHC based on measurements of charge collection properties in irradiated silicon sensors - Andreas Matthias Nurnberg (KIT - Karlsruhe Institute of Technology (DE))

09:20 Operational Experience with the ATLAS Pixel Detector - Laura Jeanty (LBL, USA) Laura Jeanty (Lawrence Berkeley National Lab. (US))

09:40 The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider - Francesco Guescini (Universite de Geneve (CH))

10:00 LHC Phase 2 upgrade of the ATLAS Pixel Detector - Paolo Morettini (INFN Genova)

10:20 Radiation Damage in the LHCb VELO and its Impact on Operations in LHC Run 2 - Kurt Rinnert (University of Liverpool (GB))

10:40 Beam Test Characterization of CMS Silicon Pixel Detectors for the Phase-1 Upgrade - Ievgen Korol (Deutsches Elektronen-Synchrotron (DE))
11:00 Coffee Break
Coffee Break
11:00 - 11:20
11:20
11:20 - 13:10
Contributions

11:20 Invited talk: Status of the RDH project - Giuseppe Battistoni (INFN Milano (IT))

11:50 MULTIDISCIPLINARY APPLICATIONS OF LASER-DRIVEN IONS: RATIONALE AND PRELIMINARY RESULTS OF THE ELIMED NETWORK - Pablo Cirrone (Laboratori Nazionali del Sud (INFN))

12:10 Wireless ultra-wide band transmission of bio signals - Alessandro Gabrielli (Universita e INFN (IT))

12:30 Development of silicon monolithic arrays for dosimetry in external beam radiotherapy - Francesca Bisello (, IBA Dosimetry, Schwarzenbruck, Germany)

12:50 aSi Electronic Portal Imaging Device for the Radiotherapy In Vivo Dosimetry - Angelo Piermattei (Istituto di Fisica e UOC Fisica Sanitaria Università Cattolica S.C. Roma, Italy)
13:10 Lunch
Lunch
13:10 - 14:30
14:30
14:30 - 16:00
Contributions

14:30 Invited talk: Low Gain Avalanche Detectors (LGAD) for High Energy Physics experiments - Pablo Fernandez Martinez (Instituto de Microelectronica de Barcelona)

15:00 Design and TCAD simulation of double-sided pixelated low gain amplification detectors - Gian-Franco Dalla Betta (INFN and University of Trento)

15:20 Weightfield: Ultra Fast Silicon Detectors simulator - Francesca Cenna (Università di Torino e INFN)

15:40 Design of Ultra-Fast Silicon Detectors - Nicolo Cartiglia (Universita e INFN (IT))
16:00 Coffee break
Coffee break
16:00 - 16:20
16:20
16:20 - 17:30
Contributions

16:20 Radiation effects in RMD Deep-Depleted APDs used as charged particle detectors - Sebastian White (Rockefeller University (US))

16:40 Picosecond timing of high-energy heavy ions with semiconductor detectors - Vladimir Eremin (Ioffe Physical-Technical Institute)

17:00 Measurements of LGAD Segmented Devices for high energy physics - Emanuele Cavallaro (Universitat Autònoma de Barcelona (ES))

17:10 Design and Fabrication of an Optimal Peripheral Region for the LGAD - David Flores Gual (Instituto de Microelectronica de Barcelona) Pablo Fernandez Martinez (Instituto de Microelectronica de Barcelona)
17:30

17:30 - 17:45