June 28, 2015 to July 2, 2015
JW Marriott Starr Pass Resort
Etc/GMT-7 timezone

Highly Formable Tantalum Barrier for Nb3Sn Conductors

Jun 30, 2015, 9:00 AM
Exhibit Hall (Arizona Ballroom)

Exhibit Hall (Arizona Ballroom)

Poster Presentation ICMC-01 - NbTi/Nb3Sn/A15 Processing and Properties M2PoA - Superconductors Materials II: Nb3Sn, FeAs-based


Dr David Foley (Shear Form, Inc.)


Ta diffusion barrier integrity is critical in the development of higher Nb ratios in internal-tin (IT) conductors. Current fabrication methodologies predominantly employ conventional wrapped Ta sheet, which deform non-uniformly during wire drawing. This leads to non-uniform Ta layers, with thickness varying between 10-2 microns as evident from IT cross-sectional images. The objective of this work is to present strategies to replace conventional Ta sheet material with severe plastic deformation (SPD)-processed, uniform, fine-grain material. Preliminary work has demonstrated that simply replacing the sheet with SPD-processed sheet improves the layer drawability in wrapped composite tubular components. Innovative SPD strategies have led to the development of” weld- healing” of electron beam (EB) welds in Ta tube. We will present ongoing work on thr weld-healing path as well asdevelopment of seamless fine grained Ta capable of higher thickness reductions. Microstructural and mechanical test results will be discussed.

Primary author

Dr David Foley (Shear Form, Inc.)


Prof. Karl Hartwig (Texas A&M University) Mr Robert Barber (Shear Form, Inc.) Mr Shreyas Balachandran (Texas A&M University)

Presentation materials