Speaker
Susanne Kuehn
(Albert-Ludwigs-Universitaet Freiburg (DE))
Description
Measurements of silicon sensors having charge multiplication are candidates for radiation hard detectors for future high energy physics experiments. Important to understand is their applicability in terms of long-term biasing and high voltage cycling, especially in case of a use as tracking devices.
The talk will show measurement results of various p-type strip sensors after days to weeks of biasing with very high voltages. The collected charge obtained with beta source measurements and details on the cluster sizes are investigated.
On several sensors, irradiated to fluences of around 2*10^15 Neq/cm2, a decrease in collected charge of up to 25% has been observed. Partial recovery of the signal is possible after turning of the high voltage for a short time, although the maximum signal is never recovered. Further new measurements and data analysis results will be presented aiming for an improved understanding of the effect of reduced charge.
Primary author
Susanne Kuehn
(Albert-Ludwigs-Universitaet Freiburg (DE))
Co-authors
Christopher Betancourt
(Albert-Ludwigs-Universitaet Freiburg (DE))
Karl Jakobs
(Albert-Ludwigs-Universitaet Freiburg (DE))
Marc Manuel Hauser
(Albert-Ludwigs-Universitaet Freiburg (DE))
Riccardo Mori
(Albert-Ludwigs-Universitaet Freiburg (DE))
Ulrich Parzefall
(Albert-Ludwigs-Universitaet Freiburg (DE))
