Speaker
Prof.
Denis Morris
(Département de physique, Université de Sherbrooke)
Description
The advance of non-contact measurements involving pulsed terahertz radiation presents great interests for characterizing electrical properties of a large ensemble of nanowires. In this work, InP and Si nanowires grown by molecular beam epitaxy or by chemical vapor deposition on silicon substrates were characterized using optical-pump terahertz probe (OPTP) transmission experiments. The influence of various fabrication parameters (v.g. doping and NW diameter) on the carrier dynamics has been investigated. Photocarrier lifetimes and mobilities can be extracted from such OPTP measurements.
Primary author
Prof.
Denis Morris
(Département de physique, Université de Sherbrooke)
Co-authors
Mr
Alexandre Beaudoin
(Département de physique, Université de Sherbrooke)
Mr
Amaury Mavel
(Institut des nanotechnologies de Lyon, France)
Dr
Bassem Salem
(Laboratoire des technologies de la microélectronique - CNRS, France,)
Dr
Michel Gendry
(Institut des nanotechnologies de Lyon, France)
Dr
Nicolas Chauvin
(Institut des nanotechnologies de Lyon, France)
Mrs
Olésia Tutaskonko
(Département de physique, Université de Sherbrooke)
Dr
Thierry Baron
(Laboratoire des technologies de la microélectronique - CNRS, Grenoble, France)
