Name: 26th RD50 Workshop (Santander)
Start: 2015-06-22T08:15:00+02:00
End: 2015-06-24T23:00:00+02:00
Location: Santander

26th RD50 Workshop (Santander)

from Monday, June 22, 2015 (8:15 AM) to Wednesday, June 24, 2015 (11:00 PM)

Monday, June 22, 2015
9:00 AM
9:00 AM - 1:00 PM
Contributions

10:00 AM Welcome speech by UIMP vice-dean - Rodrigo Martínez-Val Peñalosa (UIMP - Vicerrector de Innovación y desarrollo de proyectos)

10:10 AM Technical information - Ivan Vila Alvarez (Universidad de Cantabria (ES)) Marcos Fernandez Garcia (Universidad de Cantabria (ES))

10:20 AM Analysis of electron mobility dependence on electron and neutron irradiation in silicon - Juozas Vaitkus (Vilnius University)

10:40 AM Defect generation and damage functions in electron irradiated silicon-dependence on particle energy - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

11:30 AM Modelling Radiation Induced Vacancy-Interstitial Clusters - Juozas Vaitkus (Vilnius University)

11:50 AM Studies of initial acceptor removal in p-type silicon - Gregor Kramberger (Jozef Stefan Institute (SI))

12:10 PM Discussion on defect characterization - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
1:00 PM Lunch break
Lunch break
1:00 PM - 3:30 PM
3:30 PM
3:30 PM - 6:00 PM
Contributions

3:30 PM Recent progress on 3D pixel detectors - Joern Lange (IFAE Barcelona)

3:50 PM Status of 3D detector activities at CNM - Giulio Pellegrini (Universidad de Valencia (ES))

4:10 PM Recent testbeam results of 50 µm pitch 3D sensors at high incidence angle for HL-LHC - Ivan Lopez Paz (IFAE Barcelona)

4:30 PM Proposal for a new RD50 project "Strip sensors made of N-rich FZ silicon" - Alexander Dierlamm (KIT - Karlsruhe Institute of Technology (DE))

4:50 PM Discussion on 3D detectors and RD50 proposal
6:00 PM Meeting
Meeting
6:00 PM - 8:00 PM
Tuesday, June 23, 2015
8:50 AM
8:50 AM - 12:25 PM
Contributions

9:00 AM Status of CNM RD50 Projects - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

9:20 AM New iLGAD detector development at CNM - Salvador Hidalgo (Centro Nacional de Microelectronica (IMB-CNM-CSIC))

9:40 AM TCT measurements on neutron and proton irradiated LGAD diodes - Christian Gallrapp (CERN)

10:00 AM Study of irradiated NinN production and LGAD dopping profiles - Vagelis Gkougkousis (Laboratoire de l'Accelerateur Lineaire (FR))

10:20 AM Progress on the Two-Photon-Absortion TCT technique - Ivan Vila Alvarez (Universidad de Cantabria (ES))

10:40 AM Time resolution of thin LGADs - Hartmut Sadrozinski (SCIPP, UC santa Cruz)

11:00 AM Alibava Systems

11:20 AM A Compact/Educational-TCT presentation - Marko Zavrtanik (Jozef Stefan Institute (SI))

11:30 AM Timing performance of the last CNM LGAD production - Nicolo Cartiglia (Universita e INFN Torino (IT))

11:55 AM Discussion on LGAD, timing - Giulio Pellegrini (Universidad de Valencia (ES))
12:25 PM
12:25 PM - 1:25 PM
Contributions

12:25 PM TiN ALD layers for future pixel detector applications - Esa Tuovinen (Helsinki Institute of Physics (FI))

12:45 PM Embedded pitch adapters as a proposal for high-yield interconnection for strip sensors - Miguel Ullan Comes (CNM-Barcelona (ES))

1:05 PM Ongoing R&D Activities at CiS Forschungsinstitut fuer Mikrosensorik: Bump Bonding - Alexander Lawerenz (CiS Forschungsinstitut fuer Mikrosensorik)
1:25 PM Lunch break
Lunch break
1:25 PM - 3:30 PM
3:30 PM
3:30 PM - 7:10 PM
Contributions

3:30 PM Sensor Development for the LHCb VELO Upgrade - Alvaro Dosil Suarez (Universidade de Santiago de Compostela (ES))

3:50 PM Tests of 50 µm thick silicon micro-strip sensors after extreme fluences up to 3x10$^{16}$ neq cm$^{-2}$ - Sven Wonsak (University of Liverpool (GB))

4:10 PM Investigation of hit efficiency of n-in-p pixels with different designs - Natascha Savic (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

4:30 PM Test beam and clean room studies of ATLAS PPS modules with alternative bias rail geometries - Clara Nellist (LAL-Orsay (FR))

4:50 PM Update on Surface Studies of n-on-p Silicon Strip Sensors after irradiation to HL-LHC fluences: Prague status - Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))

5:10 PM Update on radiation hardness of Silicon Diodes for the future CMS High Granularity Calorimeter (HGCAL). - Esteban Curras Rivera (Universidad de Cantabria (ES))

6:00 PM Long term performance of silicon strip detectors under high bias voltage: charge collection and laser measurements - Riccardo Mori (Albert-Ludwigs-Universitaet Freiburg (DE))

6:20 PM Discussion - Gregor Kramberger (Jozef Stefan Institute (SI))
8:30 PM

8:30 PM - 11:40 PM
Wednesday, June 24, 2015
9:30 AM
9:30 AM - 10:50 AM
Contributions

9:30 AM HV-CMOS device fabrication - Gianluigi Casse (University of Liverpool (GB))

9:50 AM E-TCT and charge collection studies with irradiated HV-CMOS detectors - Igor Mandic (Jozef Stefan Institute (SI))

10:10 AM Radiation hardness of neutron irradiated HVCMOSv3 - Marcos Fernandez Garcia (Universidad de Cantabria (ES))

10:30 AM A preliminary look at HV-CMOS eTCT data after p-irradiation - Daniel Muenstermann (Universite de Geneve (CH)) Marcos Fernandez Garcia (Universidad de Cantabria (ES))
10:50 AM TCAD
TCAD
10:50 AM - 12:50 PM
Contributions

11:20 AM Status of 3D Detectors TCAD Simulations - Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))

11:40 AM Signal formation in segmented Si planar detectors: TCAD simulated effect of SiO2 passivation layer - Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

12:00 PM Discussion on HVCMOS and discussion on Simulations - Gianluigi Casse (University of Liverpool (GB)) Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))
12:50 PM Lunch break
Lunch break
12:50 PM - 3:00 PM
3:00 PM
3:00 PM - 5:00 PM
Contributions

3:00 PM Tutorial: part 1 - Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))

4:00 PM Tutorial: part 2 - Pablo Fernandez Martinez (Instituto de Fisica Corpuscular (ES))

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