Speaker
Mr
Thomas Greig
(Brunel University)
Description
The design of pixel test structures for CMOS active pixel sensors
(APS) being developed by Brunel University and e2v technologies ltd
are described in this paper. The APS pixel is a development of a
standard readout and sensing arrangement employing three transistors
per pixel but has been optimised for indirect x-ray detection
applications. The pixel is tuned to have a narrow band response to
visible light generated by a scintillator screen and also has a high
well capacity. This application demonstrates some of the challenges
that need to be overcome when using the standard CMOS foundry
processes to develop APS for scientific imaging applications and we
present the possibility of using a custom CMOS process to create a
low noise high fill factor/QE pinned photodiode pixel
Primary author
Mr
Thomas Greig
(Brunel University)
