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12-16 September 2005
University of Liverpool
Europe/Zurich timezone

A Semiconductor Compton Camera Using Position-Sensitive Si/CdTe Detectors

15 Sep 2005, 10:30
45m
University of Liverpool

University of Liverpool

Greenbank Conference Park
Board: P11
Contributed Poster X-ray and Gamma-ray Detectors P : Coffee and Poster Session

Speaker

Dr Kazuhiro Nakazawa (Department of High Energy Astrophysics, ISAS/JAXA, Japan)

Description

Compton cameras are the most promising approach for gamma-ray detection from several tens keV to several MeV. High energy resolution and position resolution are of particular importance to obtain high angular resolution, and hence clear images. We are developing new Compton cameras using Si and CdTe semiconductor position-sensitive detectors. Si is suitable for a scatterer because it has high Compton scattering efficiency below 1 MeV, and CdTe is appropriate for an absorber with its high photo-electric absorption efficiency. Here, we will demonstrate the results obtained with our prototype compton camera. The Compton camera consists of six layers of Si Strip detectors, and CdTe pixel detectors. Low noise analogue ASICs, VA32TAs are utilized to read out signals from the detectors. We obtained Compton-reconstructed images and spectra of line gamma- rays from 81 keV to 662 keV. An angular resolution of several degrees is obtained when we reconstructed Compton scattering events. The energy resolution is 9.1 keV and 18 keV at 356 keV and 511 keV, respectively. In this presentation, the most recent prototype of Compton cameras combined with scintillators for anti-shields will also be addressed.

Primary author

Dr Kousuke Oonuki (ISAS/JAXA Japan)

Co-author

Dr Kazuhiro Nakazawa (Department of High Energy Astrophysics, ISAS/JAXA, Japan)

Presentation materials