5–9 Jul 2016
<a href=http://www.sfpalace.com/>Palace Hotel San Francisco</a>
America/Los_Angeles timezone

Research on Transient Junction Temperature Rise of Pulse Thyristor

7 Jul 2016, 13:30
1h 30m
Presidio

Presidio

Poster Presentation Opening, Closing, and Solid State Switches Poster 2-B

Speaker

Mr Jinchang Hu (Huazhong University of Science and Technology)

Description

Thyristor has been widely used in HVDC transmission system and pulsed power system.The thyristor will be damaged if transient temperature rise of valve plate is too high ,and it will result in the system failure.The relationship between peak value of pulse current flowed the circuit and maximum transient temperature rise of thyristor in pulsed power system was investigated in this paper. Firstly, one circuit used to measure junction temperature rise of thyristor was designed,which was based on the theory that there is a linear relationship between the conducting voltage drop of thyristor and junction temperature rise of thyristor.The thyristor was kept on during the measuring process in the designed circuit.The junction temperature rise of thyristor was calculated through the thermal sensitive curve and the change of the conducting voltage drop of thyristor which can be measured in the designed circuit.The maximum junction temperature rise of thyristor was obtained after one heavy pulse current flowed.Then the equivalent thermal impedance model was built.The thermal resistance and thermal capacitance can be obtained by transient thermal impedance curve fitting,and parameter of equivalent current source can be calculated through the power curve.The temperature variation curve was calculated by the thermal impedance simulation model as the thyristor flowed pulse current.The maximum junction temperature rise of thyristor obtained from the simulation result was almost the same as maximum temperature rise obtained from experiment data.A method to evaluate the temperature rise of thyristor was obtained through the research.

Primary author

Mr Jinchang Hu (Huazhong University of Science and Technology)

Co-authors

Prof. Fuchang Lin (Huazhong University of Science and Technology) Dr Ling Dai (Huazhong University of Science and Technology) Mr Yang Yang (Huazhong University of Science and Technolofy) Mr Zhang Qin (Huazhong University of Science and Technology)

Presentation materials

Peer reviewing

Paper