Speaker
Ms
Kanyarat Kesrisom
(Department of Physics, Faculty of Science, Kasetsart University, Bangkok, Thailand, 10900)
Description
The effect of various annealing treatments on the structure properties of crystalline silicon (c-Si) produced by the inverted aluminum induced crystallization of amorphous silicon (a-Si) films was studied. The surface morphology and grain size of c-Si films were observed by optical microscope, SEM and AFM. X-ray diffraction and Raman spectroscopy were used to study quantity of Si crystallization due to thermal annealing. Results showed that the c-Si with average grain size of 27 nm in a (111) orientation were obtained by the thermal annealing at 300 oC for 1 h. Prolonged heat treatment improved Si crystallite quality and increased the average grain size.
Primary authors
Ms
Kanyarat Kesrisom
(Department of Physics, Faculty of Science, Kasetsart University, Bangkok, Thailand, 10900)
Dr
Surssak Chiangga
(Department of Physics, Faculty of Science, Kasetsart University, Bangkok, Thailand, 10900)
