First Barcelona Techno Week: Course on semiconductor radiation detectors

11 Jul 2016, 09:00 → 15 Jul 2016, 18:30 Europe/Zurich

N06 (Other Institutes)

David Gascon (University of Barcelona (ES)), Rafael Ballabriga Sune (CERN)

Barcelona Techno weeks will be a series of meeting point events between academia and industry. Organised around a technological topic of interest for both worlds. They will include comprehensive multidisciplinary keynote presentations by world experts on the selected subjects combined with networking activities to foster collaboration among participants. This first edition includes a course on solid state radiation detection, from physics and electronics fundamentals to state-of-the-art reviews on radiation (X-ray, gamma-ray, charged particle) and visible light detection technologies and their applications. Lectures with extended coffee breaks and lunch, social events plus a dedicated poster and industrial presentation session are scheduled during five days.

20160711_TechnoWeek_PracticalInformations.pdf

Monday 11 July

09:00 → 09:30 Introductory concepts: Welcome and introduction

Conveners: David Gascon (University of Barcelona (ES)), Rafael Ballabriga Sune (CERN)

09:00 Welcome

Speaker: Prof. Atilà Herms

09:05 Introduction to ICCUB

Speaker: Lluis Garrido Beltran (University of Barcelona (ES))

09:15 Course Introduction

Speakers: David Gascon (University of Barcelona (ES)), Rafael Ballabriga Sune (CERN)

09:30 → 10:30 Introductory concepts: Semiconductor Detectors

Conveners: Erik Heijne (Czech Technical University (CZ)), Rafael Ballabriga Sune (CERN)

09:30 70 years of semiconductor nuclear detectors, principles and overview of implementations

The explanation of the photo-electric effect in 1905 literally shed light on the structure of matter. Nevertheless, it still took 40 years before the first practical solid devices exploited this understanding for detection of ionizing nuclear particles. From then on, during 70 years a succession of innovations has led to widespread use of semiconductor nuclear detectors in physics, materials analysis and medical imaging. The silicon-based micro- and nano-electronics technology enabled much of these semiconductor sensor developments. (Short demo with Timepix device).

Speaker: Erik Heijne (Czech Technical University (CZ))

10:30 → 10:50 Coffe break

10:50 → 12:50 Introductory concepts: Semiconductor Physics

Conveners: Erik Heijne (Czech Technical University (CZ)), Rafael Ballabriga Sune (CERN)

10:50 Interaction of photons and electrons with matter

Introductory concepts: cross section, mean free path and attenuation coefficients. Interaction of photons with matter: photoelectric effect (Auger electrons and fluorescence photons), Compton scattering, pair production, Rayleigh scattering. Interaction of electrons with matter. Emphasis on materials commonly used as radiation detectors (Si, GaAs, CdTe, CdZnTe, Ge)

Speaker: Prof. Francesc Salvat (University of Barcelona)

11:40 Signal formation in semiconductor detectors (I)

Semiconductor properties, the p-n junction (depletion width, capacitance), fluctuations on the charge (Fano factor), signal induction, drift, diffusion and the small pixel effect. Detectors classification (for example: 1. Hybrid (1.a. hybrid, 1.b. hybrid+3d), 2. Monolithic Active Pixel Sensors (2.a CMOS with charge collection on epitaxial layer, 2.b. Depleted MAPS (HV or HR substrate), CMOS on SOI, DEPFETs).

Speaker: Erik Heijne (Czech Technical University (CZ))

12:30 Timepix demonstration

Speaker: Erik Heijne (Czech Technical University (CZ))

12:50 → 14:00 Lunch

14:00 → 15:00 Introductory concepts: Semiconductor Physics

Conveners: Erik Heijne (Czech Technical University (CZ)), Rafael Ballabriga Sune (CERN)

14:00 Semiconductor detectors: practical Monte Carlo simulation

Speaker: Prof. Francesc Salvat (University of Barcelona)

15:00 → 16:30 Introductory concepts: Microelectronics and Signal Processing

Convener: Rafael Ballabriga Sune (CERN)

15:00 Introduction to CMOS

CMOS transistors, Moore’s law, technology roadmap, operation and characteristics (equations for strong and weak inversion), (very short description of bipolars, circuits where they are used) small signal circuit, matching, noise, passive components in CMOS technologies, radiation effects, technology scaling.

Speaker: Prof. Francesc Serra-Graells (IMB-CNM)

16:30 → 17:00 Coffee break

17:00 → 18:30 Introductory concepts: Microelectronics and Signal Processing

Convener: Rafael Ballabriga Sune (CERN)

17:00 Pulse processing electronics (I)

Analog CMOS circuit design: The charge sensitive amplifier (Noise mechanisms, ENC, noise sources, dimensioning the input transistor, the preamplifier reset, the shaper, baseline stabilization, discriminator, sample and hold, ADCs, TDCs, packaging and interconnects, examples.

Speaker: Paul O'Connor (Department of Physics)

Tuesday 12 July

09:00 → 10:30 Introductory concepts: Microelectronics and Signal Processing

Convener: Rafael Ballabriga Sune (CERN)

09:00 Pulse processing electronics (II)

Analog CMOS circuit design: The charge sensitive amplifier (Noise mechanisms, ENC, noise sources, dimensioning the input transistor, the preamplifier reset, the shaper, baseline stabilization, discriminator, sample and hold, ADCs, TDCs, packaging and interconnects, examples.

Speaker: Paul O'Connor (Department of Physics)

10:30 → 11:00 Coffee Break

11:00 → 12:50 X‐ray and charged particle detectors: Sensors

Convener: Rafael Ballabriga Sune (CERN)

11:00 Sensor design and Interconnects

Si and compound semiconductor sensor design (distances, implantation, interpixel capacitance), edgeless Si sensors. Interconnections: Bump bonding, TSV (types, processing steps, materials involved, etc.)

Speaker: Sami Vähänen (VTT technical research centre of Finland)

12:50 → 14:05 Lunch

14:05 → 15:05 X‐ray and charged particle detectors: Sensors

Convener: Rafael Ballabriga Sune (CERN)

14:05 Radiation hardness in Si detectors

Radiation hardness in semiconductor detectors. 3D detectors.

Speaker: Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

15:05 → 16:05 X‐ray and charged particle detectors: Pixel Detectors

Convener: Rafael Ballabriga Sune (CERN)

15:05 Applications of hybrid pixel detectors (I)

Applications of hybrid pixel detectors: medical, space applications, dosimetry, material science, electron microscopy

Speaker: Michael Campbell (CERN)

16:05 → 16:35 Coffee

16:35 → 17:35 X‐ray and charged particle detectors: Pixel Detectors

Convener: Rafael Ballabriga Sune (CERN)

16:35 Applications of hybrid pixel detectors (II)

Applications of hybrid pixel detectors: medical, space applications, dosimetry, material science, electron microscopy.

Speaker: Michael Campbell (CERN)

17:35 → 18:35 Introductory concepts: Practical Monte Carlo Simulation (continuation)

Wednesday 13 July

09:00 → 10:40 X‐ray and charged particle detectors: Pixel Detectors

Convener: Rafael Ballabriga Sune (CERN)

09:00 Review of hybrid pixel detector readout chips for spectroscopic X-ray imaging

ASICs for spectroscopic X-Ray imaging, digitization methods, count-rate, strategies for dealing with high fluxes, charge summing and hit allocation architectures, power consumption, detector tiling.

Speaker: Rafael Ballabriga Sune (CERN)

10:40 → 11:10 Coffee break

11:10 → 12:50 X‐ray and charged particle detectors: Pixel Detectors

Convener: Rafael Ballabriga Sune (CERN)

11:10 Review of Monolithic pixel detectors

Passive monolithic pixel sensors and active monolithic pixel sensors: CCDs, CMOS with charge collection on epitaxial layer, Depleted MAPS (HV or HR substrate), CMOS on SOI, DEPFETs

Speaker: Thanushan Kugathasan (CERN)

12:50 → 14:00 Lunch

14:00 → 16:00 X‐ray and charged particle detectors: Applications

Convener: Rafael Ballabriga Sune (CERN)

14:00 Semiconductor radiation detectors for synchrotrons and XFELs”.

Synchrotron radiation and XFEL experiments exploit the iteraction of X-rays with the sample under examination in order to investigate its properties.
Depending on the application, the detector should detect the X-rays transmitted, scattered, diffracted or produced by the samples or the photoelectrons emitted, providing high temporal, spatial or energy resolution.
The requirements on the dynamic range are particularly demanding due to the high fluxes provided by synchrotron beamlines and to the need to detect signals also from weakly interacting samples.
Starting from the requirement of the experiments we will review some of the detectors used at synchrotrons:
- Diffraction/scattering: hybrid detectors;
- Fluorescence emission spectroscopy: SDD, MAIA, crystal based spectrometers;
- High resolution imaging: Scintillator-coupled detectors and hybrid detectors with interpolation;
- Soft X-rays: CCDs
The requirements become even more challenging in the case of XFELs where several thousands photons per pixel should be detected in one shot and therefore special solutions for extending the dynamic range have to be found.
We will review some of the detectors used at existing XFELs (CSPAD, pnCCD, MPCCD, GOTTHARD) and developed for the future sources (AGIPD, LPD, DSRC, JUNGFRAU, PERCIVAL).

Speaker: Anna Bergamaschi (PSI)

16:00 → 16:30 Industrial: Industrial exhibition

16:00 → 16:30 Poster: Session I

16:30 → 17:00 Coffee

17:00 → 17:30 Industrial: Industrial exhibition

17:00 → 17:30 Poster: session II

17:30 → 18:30 X‐ray and charged particle detectors: Applications

17:30 Space Applications

Space applications of semiconductor detectors: pixel detectors, strip detector, Compton detectors. Examples: AMS, Astrogam, LOFT, Athena.

Speaker: Prof. Margarida Hernanz (ICE (CSIC-IEEC))

19:00 → 21:00 Guided tour

21:00 → 23:00 Dinner

Thursday 14 July

09:00 → 10:30 Light detection: Photosensor Fundamentals

Convener: David Gascon (University of Barcelona (ES))

09:00 CMOS Image and Vision Sensors for 2-D and 3-D

1. Basic Concepts
2. Milestones and Trends
3. Imaging vs Computer Vision
4. Photodiodes and Pixels
5. Readout and Sensor Architectures
6. Exemplary 2-D Sensors

Speaker: Prof. Angel Rodriguez-Vazquez (IMSE-CNM)

10:30 → 11:00 Coffee break

11:00 → 12:50 Light detection: Imagers

Convener: David Gascon (University of Barcelona (ES))

11:00 CMOS Image and Vision Sensors for 2-D and 3-D (II)

1. Motivations for Time-of-Flight Estimation.
2. Evolution of 3D Shape Measurement
3. ToF Estimation in CMOS Technology
4. Single-Photon Detection in CMOS
5. SPAD Arrays For 3D Imaging
6. Si-PM For PET and HEP

Speaker: Prof. Ricardo Carmona (IMSE-CNM)

12:50 → 14:00 Lunch

14:00 → 15:30 Light detection: Readout Electronics

Convener: David Gascon (University of Barcelona (ES))

14:00 Front End electronics for Photodetectors

Review of photodetectors model: APD, SPAD, SiPM. Front end electronics for photodetectors: input stage (charge amplifier, transimpedance, RF amplifiers), effect of interconnetions. Optimal processing for timing: design considerations, filtering, TDC design, etc. Examples of readout ASICs for photodetection.

Speaker: Angelo Rivetti (Universita e INFN Torino (IT))

15:30 → 16:00 Industrial: Industrial exhibition

16:00 → 16:20 Coffee break

16:20 → 19:00 Industrial: Talks and exhibition

16:20 Exhibition

16:50 Introduction

17:10 Development Process of Hybrid Photon Counting X-Ray Detectors

DECTRIS is a technology leader in hybrid photon counting X-Ray detection. The DECTRIS photon counting detectors have transformed basic research at synchrotron light sources, as well as in the laboratory and with industrial X-Ray applications. This pioneering technology is the basis of a broad range of products, all scaled to meet the needs of various applications. The focus of today’s talk will be in describing the basic steps of the DECTRIS product development process. The different disciplines involved in this development process will be identified, with particular emphasis on their specific roles and on how they continuously have to interact with each other requiring precise coordination. Furthermore, the basics and the advantages of single-photon counting technology will be discussed. A brief overview of DECTRIS and of the DECTRIS product portfolio will also be presented.

Speaker: Paolo Livi (DECTRIS)

17:30 The Age of Solid-State Detectors for XRF and XRD Analysis

PANalytical provides solutions for the chemical (which and how much of certain elements) and structural (in what molecular structure) analysis of a wide variety of materials. Our customers can be found in virtually all markets including building materials, metals, mining, food, pharma, cosmetics, polymers, oils, plastics, thin film metrology, nanomaterials and many more in industries and research.
Our solutions are based upon analytical X-ray technologies like X-ray diffraction (XRD) and X-ray fluorescence (XRF) spectrometry. Over the last two decades PANalytical has introduced a number of solid-state detectors in a range of instruments as an essential part for performance improvement.
Solid-state detectors are the enabling technology for the energy-dispersive XRF (EDXRF) spectrometry where instrument performance is directly linked to detector properties. One- and two-dimensionsal XRD analysis is enhanced and enabled by the use of stripped and pixelized sensors linked to the dedicated application-specific integrated circuits (ASIC) for sensor readout.
Main performance drivers for future detectors are the improvements in energy resolution such as: count-rate capability, detection area, detection efficiency and radiation hardness. Detectors used for XRD analysis have an extra demand of good spatial resolution. These requirements are universal for all X-ray detectors, but the applicable solution is determined by the underlying technology.

Speaker: Vladimir Jovanovic (Panalytical)

17:50 Advacam - From Sensor Fabrication to X-ray Imaging

Speaker: Sami Vähänen (VTT technical research centre of Finland)

18:10 Spectral imaging with MARS

Speaker: Ali Atharifard (MARS Bio-imaging Ltd (MBI))

18:30 Usage of pixel detector to attract learning of particle physics

Speaker: Lubos Tomesek (Jablotron)

Friday 15 July

09:00 → 10:30 Light detection: Readout Electronics

Convener: David Gascon (University of Barcelona (ES))

09:00 Digitization and time pick-up

Digitizers for photodetectors: ADCs, waveform sampling, etc. Digital pulse processing with emphais on timing properties extraction.

Speaker: Angelo Rivetti (Universita e INFN Torino (IT))

10:30 → 11:00 Coffee break

11:00 → 12:50 Light detection: Applications

Convener: David Gascon (University of Barcelona (ES))

11:00 Applications: particle physics and medical imaging

Applications of photodetectors in high energy physics and medical imaging. Focused on solid state (APDs, SPADs, SIPM) but in context of PMT technology.

Speaker: Chiara Casella (Eidgenoessische Tech. Hochschule Zuerich (CH))

12:50 → 14:00 Lunch

14:00 → 14:30 Poster: session III

14:30 → 16:00 Light detection: Applications

Convener: David Gascon (University of Barcelona (ES))

14:30 Applications: biology and fluorescence

pplication of photodetectors in Super-resolution Microscopy, Single Molecule Spectroscopy, Time-resolved Fluorescence Spectroscopy

Speaker: Dr Jordi Andilla (ICFO)

16:00 → 16:30 Coffee break

16:30 → 18:00 Light detection: Applications

Convener: David Gascon (University of Barcelona (ES))

16:30 Applications: space and astronomy

Application of photodetctors in ground and space astrophsyics instruments. CD and CMOS Imaging Devices for Ground Based Telescopes and Space Missions. Cosmic ray amd VHE particle detection with solid state photo-sensors.

Speakers: David Gascon (University of Barcelona (ES)), Prof. Jose M. Gómez (ICCUB-IEEC)