18–22 Jun 2017
Hilton Brighton Metropole Hotel
Europe/London timezone

Design of compact and repetitive pulsed e-beam source

21 Jun 2017, 11:15
15m
Stanmer (Hilton Brighton Metropole Hotel)

Stanmer

Hilton Brighton Metropole Hotel

Speaker

Dr Fa-lun Song

Description

We report on the design of a compact and repetitive pulsed e-beam source. This pulsed e-beam source, which can work stably for long time, was built based on Marx technology. The designed output voltage, current, pulse width and repetition frequency of this e-beam source is 1 MV, 20 kA, 180 ns and 1~50 Hz, respectively. In contrast, the volume and weight of this source is limited to 2.5 m3 and 2.2 ton. The energy density of a pulse forming network model in this source attains 23 kJ/m3. When working at single shots, this e-beam source gives an output voltage of 0.98 MV, current of 18 kA and power of approximate 20 GW. On the other hand, this e-beam source realizes an output voltage of 0.9 MV, current 18 kA and power 16 GW at a repetition frequency of 30 Hz. The source works very stable, with a jitter of 6 ns.

Primary author

Co-authors

Mr Yan-qing Gan (Institute of Applied Electronics, China Academy of Engineering Physics) Mr Hai-tao Gong (Institute of Applied Electronics, China Academy of Engineering Physics) Ms Hui Jin (Institute of Applied Electronics, China Academy of Engineering Physics) Dr Xiao Jin (Institute of Applied Electronics, China Academy of Engineering Physics) Ms Chun-xia Li (Institute of Applied Electronics, China Academy of Engineering Physics) Dr Fei Li (Institute of Applied Electronics, China Academy of Engineering Physics) Mr Guang-yao Luo (Institute of Applied Electronics, China Academy of Engineering Physics) Dr Feng Qin (Institute of Applied Electronics, China Academy of Engineering Physics) Mr You-bin Su (Institute of Applied Electronics, China Academy of Engineering Physics) Mr Gan-ping Wang (Institute of Applied Electronics, China Academy of Engineering Physics) Mr Bei-zhen Zhang (Institute of Applied Electronics, China Academy of Engineering Physics) Ms Hong-yan Zhuo (Institute of Applied Electronics, China Academy of Engineering Physics)

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