Pixelated CdZnTe detector based on Topmetal-IIa sensor

10 Dec 2017, 20:02
1m
Conference Center (Okinawa Institute of Science and Technology Graduate University (OIST))

Conference Center

Okinawa Institute of Science and Technology Graduate University (OIST)

OIST, Onna, Okinawa 904-0495, Japan
POSTER Technologies POSTER

Speaker

Ms Yan Fan (Central China Normal University)

Description

Topmetal-II- is a direct-charge collecting pixel sensor with the Equivalent Noise Charge(ENC) of 13.9e- in the room air. A pixelated CdZnTe detector based on Topmetal-II- sensor works at a low bias voltage of -2V due to leakage current saturation. In order to improve the bias voltage of the crystal to achieve higher spatial resolution, as well as to keep the low noise, Topmetal-IIa has been designed. The new sensor has the same array scan module with Topmetal-II-, but three different sections of the charge-collection electrode named Topmetal and the same layer metal surrounding the electrode called Guardring. Section A has the opening exposed electrode and the Guardring covered by insulating layer, which is the same as Topmetal-II-. Section B has the both opening exposed electrode and Guardring. Section C has the opening exposed Guardring and the electrode covered by insulating layer. Preliminary experiments show that Topmetal-IIa sensor has low ENC similar to Topmetal-II-, and the pixelated CdZnTe detector could work with Topmetal-IIa sensor could work at a bias voltage up to several hundred volts as to achieve high spatial resolution.

Primary author

Ms Yan Fan (Central China Normal University)

Co-authors

Prof. Xiangming Sun (Central China Normal University) Ms Ping Yang (Central China Normal University) Prof. Guangming Huang (Central China Normal University) Ms Zhen Wang (Central China Normal University) Mr Dong Wang (Central China Normal University) Mr Shuguang Zou (Central China Normal University) Mr Zili Li (Central China Normal University) Mr Ruiheng Sima (Central China Normal University)

Presentation materials