21-23 November 2016
CERN
Europe/Zurich timezone

TCAD simulations of p-bulk silicon sensors after a large range of fluences

22 Nov 2016, 16:10
20m
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin

CERN

6-2-024
120
Show room on map

Speaker

Marco Bomben (Centre National de la Recherche Scientifique (FR))

Description

In this talk I will present recent results from TCAD simulations using Silvaco tools.
In particular I will focus on p-bulk sensors, both standard diodes and LGADs.
At the beginning I will present a comparison of two radiation damage models for the bulk (Perugia, New Delhi).
Then I will comment on the impact of radiation damage model parameters uncertainties on macroscopic observables.
Eventually I will present some results on simulated thin LGADs under laser red light illumination.

Primary author

Marco Bomben (Centre National de la Recherche Scientifique (FR))

Presentation Materials