The UT working group is developing the Upstream Tracker for the LHCb experiment upgrade. Four testbeams were carried out in 2015 and 2016 to assess the performance of both full size and mini prototype silicon strip detectors. We present results on the performance of these sensors at various levels of sensor irradiation.
The LHCb Vertex Locator (VELO) is a silicon micro-strip detector operating extremely close to the LHC proton beams. During nominal data-taking the innermost active strips are as close as ~8 mm to the beams. This proximity makes the LHCb VELO an ideal laboratory to study radiation damage effects in silicon detectors.
There are numerous challenges for VELO, both in proton and ion runs.
The...
As a result of the radiation damage expected at HL-LHC, the collected charge and the Lorentz angle on the silicon strip sensors present at the detectors is expected to change. Therefore, the collected charge and the Lorentz angle are measured on non-irradiated and highly irradiated future ATLAS silicon micro-strip sensors at the DESY II test beam. The results of the change in the collected...
We will present a summary of long term annealing studies at Room Temperature and 60°C, using irradiated p-type sensors up to a fluence of 2e15 n_eq/cm^2. Measurements include the charge collection and leakage current behavior, and based on this estimate the scaling factor between the two temperatures and the behavior of the effective doping concentration.
Ideal photodiodes can detect all incoming photons independently of the wavelength, angle or intensity of the incident light. Present-day photodiodes notably suffer from optical losses and generated charge carriers are often lost via recombination. Here, we demonstrate a device with an external quantum efficiency above 96% over the wavelength range 250–950 nm. Instead of a conventional p–n...
Latest productions of thin n-in-p pixel sensors designed at MPP will be presented. Sensors of thicknesses of 50, 100 and 150 um have been produced at ADVACAM and CiS (100 and 150 um) and interconnected to FE-I4 chips. At ADVACAM SOI wafers were employed, while at CiS anisotropic KOH etching was carried out to create backside cavities in the wafer leaving thicker frames around each single...
The aim of the talk is to show at the RD50 community a proposal for the definition of a RD50 project with the goal of the realization of a edgless detector at FBK.
Respect to the technological approach that used up now so passivate the trench with doping and filling the trench , we suggest to use the idea proposed by Resarch Naval Insitute ( Fadeyev) to use the allumina as passivation...
Recently, Fraunhofer ISE developed a technology with the potential to epitaxially produce very cost-efficient thin-films of 50-200 um thickness for the solar cell industry, aiming to lower the price for a 156mm by 156mm substrate to below the ~EUR level. Such thicknesses are precisely what is required for HL-LHC applications and the exitaxial growth might yield some additional benefits.
I...
